Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxyAndré Bohomoletz Henriques E T R Chidley; S K Haywood; R J Nicholas; N J Mason; P J Walkerv.6 , p.45, 1991 Semiconductor Science and Technology1991Item não circula. Consulte sua biblioteca.(Acessar) |
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2 |
Material Type: Artigo
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Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxyAndré Bohomoletz Henriques E T R Chidley; S K Haywood; R J Nicholas; N J Mason; P J Walkerv.6 , p.45, 1991 Semiconductor Science and Technology1991Item não circula. Consulte sua biblioteca.(Acessar) |
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3 |
Material Type: Artigo
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Near room temperature operation of a highly strained short wavelength (2.1 µm) AlAs/In0.84Ga0.16As/AlAs/InAlAs QWIPMohamed, A H ; Missous, M ; Lai, K T ; Haywood, S KSemiconductor science and technology, 2006-06, Vol.21 (6), p.813-817 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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4 |
Material Type: Artigo
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Intersubband absorption from 2 to 7 μm in strain-compensated double-barrier InxGa1-xAs multiquantum wellsLAI, K. T ; GUPTA, R ; MISSOUS, M ; HAYWOOD, S. KSemiconductor science and technology, 2004-11, Vol.19 (11), p.1263-1267 [Periódico revisado por pares]Bristol: Institute of PhysicsTexto completo disponível |
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5 |
Material Type: Artigo
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Photoluminescence of GaSb grown by metal-organic vapour phase epitaxyChidley, E T R ; Haywood, S K ; Henriques, A B ; Mason, N J ; Nicholas, R J ; Walker, P JSemiconductor science and technology, 1991-01, Vol.6 (1), p.45-53 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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6 |
Material Type: Artigo
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A comparison of 1.55 mu m distributed Bragg reflector stacks for use in multi quantum well micro resonator modulatorsGuy, P ; Woodbridge, K ; Haywood, S K ; Hopkinson, MSemiconductor science and technology, 1995-09, Vol.10 (9), p.1283-1286, Article 1283 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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7 |
Material Type: Artigo
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Resonant cavity-enhanced (RCE) photodetector based on Ga(In)Sb for gas-sensing applicationsMansoor, F ; Haywood, S K ; Mason, N J ; Nicholas, R J ; Walker, P J ; Grey, R ; Hill, GSemiconductor science and technology, 1995-07, Vol.10 (7), p.1017-1021 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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8 |
Material Type: Artigo
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Photoconductivity studies of InAsP/InP heterostructures in applied magnetic and electric fieldsKinder, D ; Nicholas, R J ; Stavrinou, P N ; Haywood, S K ; Hart, L ; Hopkinson, M ; David, J P R ; Hill, GSemiconductor science and technology, 1996-01, Vol.11 (1), p.34-38 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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9 |
Material Type: Artigo
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Growth of GaSb by MOVPEHaywood, S K ; Henriques, A B ; Mason, N J ; Nicholas, R J ; Walker, P JSemiconductor science and technology, 1988-04, Vol.3 (4), p.315-320 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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10 |
Material Type: Artigo
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Devices and desires in the 2-4 mu m region based on antimony-containing III-V heterostructures grown by MOVPEAardvark, A ; Allogho, G G ; Bougnot, G ; David, J P R ; Giani, A ; Haywood, S K ; Hill, G ; Klipstein, P C ; Mansoor, F ; Mason, N J ; Nicholas, R J ; Pascal-Delannoy, F ; Pate, M ; Ponnampalam, L ; Walker, P JSemiconductor science and technology, 1993-01, Vol.8 (1S), p.S380-S385 [Periódico revisado por pares]IOP PublishingTexto completo disponível |