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Refinado por: Nome da Publicação: Applied Physics Letters remover idioma: Norueguês remover
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1
Iron and intrinsic deep level states in Ga2O3
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Iron and intrinsic deep level states in Ga2O3

Ingebrigtsen, M. E. ; Varley, J. B. ; Kuznetsov, A. Yu ; Svensson, B. G. ; Alfieri, G. ; Mihaila, A. ; Badstübner, U. ; Vines, L.

Applied physics letters, 2018-01, Vol.112 (4) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Ti- and Fe-related charge transition levels in β−Ga2O3
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Ti- and Fe-related charge transition levels in β−Ga2O3

Zimmermann, Christian ; Frodason, Ymir Kalmann ; Barnard, Abraham Willem ; Varley, Joel Basile ; Irmscher, Klaus ; Galazka, Zbigniew ; Karjalainen, Antti ; Meyer, Walter Ernst ; Auret, Francois Danie ; Vines, Lasse

Applied physics letters, 2020-02, Vol.116 (7) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Altering thermal transport by strained-layer epitaxy
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Altering thermal transport by strained-layer epitaxy

Majdi, Tahereh ; Pal, Souvik ; Hafreager, Anders ; Murad, Sohail ; Sahu, Rakesh P. ; Puri, Ishwar K.

Applied physics letters, 2018-05, Vol.112 (19) [Periódico revisado por pares]

American Institute of Physics

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4
Formation of γ-Ga2O3 by ion implantation: Polymorphic phase transformation of β-Ga2O3
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Formation of γ-Ga2O3 by ion implantation: Polymorphic phase transformation of β-Ga2O3

García-Fernández, J. ; Kjeldby, S. B. ; Nguyen, P. D. ; Karlsen, O. B. ; Vines, L. ; Prytz, Ø.

Applied physics letters, 2022-11, Vol.121 (19) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
High mobility of intrinsic defects in α-Ga2O3
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High mobility of intrinsic defects in α-Ga2O3

Azarov, Alexander ; Park, Ji-Hyeon ; Jeon, Dae-Woo ; Kuznetsov, Andrej

Applied physics letters, 2023-05, Vol.122 (18) [Periódico revisado por pares]

Melville: American Institute of Physics

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6
Phase-resolved spin-wave tomography
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Phase-resolved spin-wave tomography

Hashimoto, Yusuke ; Johansen, Tom H. ; Saitoh, Eiji

Applied physics letters, 2018-02, Vol.112 (7) [Periódico revisado por pares]

American Institute of Physics

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7
Thermal process dependence of Li configuration and electrical properties of Li-doped ZnO
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Thermal process dependence of Li configuration and electrical properties of Li-doped ZnO

Zhang, Z ; Knutsen, K E ; Merz, T ; Kuznetsov, A Yu ; Svensson, B G ; Brillson, L J

Applied physics letters, 2012-01, Vol.100 (4), p.042107-042107-3 [Periódico revisado por pares]

American Institute of Physics

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8
Lateral straggling of implanted aluminum in 4H-SiC
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Lateral straggling of implanted aluminum in 4H-SiC

Müting, J. ; Bobal, V. ; Neset Sky, T. ; Vines, L. ; Grossner, U.

Applied physics letters, 2020-01, Vol.116 (1) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
Fine structure in electronic transitions attributed to nitrogen donor in silicon carbide
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Fine structure in electronic transitions attributed to nitrogen donor in silicon carbide

Assmann, N. ; Persson, C. ; Kuznetsov, A. Yu ; Monakhov, E. V.

Applied physics letters, 2021-12, Vol.119 (26) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Dominating migration barrier for intrinsic defects in gallium oxide: Dose-rate effect measurements
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Dominating migration barrier for intrinsic defects in gallium oxide: Dose-rate effect measurements

Azarov, Alexander ; Venkatachalapathy, Vishnukanthan ; Monakhov, Edouard V. ; Kuznetsov, Andrej Yu

Applied physics letters, 2021-06, Vol.118 (23) [Periódico revisado por pares]

Melville: American Institute of Physics

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