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Refinado por: Lista de Todas as Versões Journal of Applied Physics remover
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1
Photomodulated electron-spin resonance in amorphous silicon
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Photomodulated electron-spin resonance in amorphous silicon

Hattori, K. ; Ota, Y. ; Sato, K. ; Okamoto, H.

Journal of applied physics, 1998-11, Vol.84 (9), p.4974-4978 [Periódico revisado por pares]

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2
Properties of molecular-beam-epitaxy-grown and O+-implanted GaAs and their application to the formation of a buried collector of an AlGaAs/GaAs heterojunction bipolar transistor
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Properties of molecular-beam-epitaxy-grown and O+-implanted GaAs and their application to the formation of a buried collector of an AlGaAs/GaAs heterojunction bipolar transistor

OTA, Y ; YANAGIHARA, M ; INADA, M

Journal of applied physics, 1988-07, Vol.64 (2), p.926-930 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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3
Silicon molecular beam epitaxy with simultaneous ion implant doping
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Silicon molecular beam epitaxy with simultaneous ion implant doping

Ota, Yusuke

Journal of applied physics, 1980-02, Vol.51 (2), p.1102-1110 [Periódico revisado por pares]

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4
Effects of substituted elements into the Cr layer on a CoNiCr/Cr sputtered hard disk
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Effects of substituted elements into the Cr layer on a CoNiCr/Cr sputtered hard disk

TANI, N ; HASHIMOTO, M ; MURATA, Y ; ISHIKAWA, M ; OTA, Y ; NAKAMURA, K

Journal of applied physics, 1990-06, Vol.67 (12), p.7507-7509 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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5
Protective coating on the p-n junction of In sub(0.53)Ga sub(0.47)As/InP p-i-n planar diodes by vacuum-evaporated glass
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Protective coating on the p-n junction of In sub(0.53)Ga sub(0.47)As/InP p-i-n planar diodes by vacuum-evaporated glass

Ota, Y ; Hu, P H-S ; Seabury, C W ; Brown, M G

Journal of applied physics, 1987-01, Vol.61 (1), p.404-410 [Periódico revisado por pares]

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6
Protective coating on the p-n junction of In0.53Ga0.47As/InP p-i-n planar diodes by vacuum-evaporated glass
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Protective coating on the p-n junction of In0.53Ga0.47As/InP p-i-n planar diodes by vacuum-evaporated glass

OTA, Y ; HU, P. H.-S ; SEABURY, C. W ; BROWN, M. G

Journal of applied physics, 1987, Vol.61 (1), p.404-410 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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7
Thermal behavior of thick vacuum evaporated polycrystalline silicon layer
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Thermal behavior of thick vacuum evaporated polycrystalline silicon layer

OTA, Y ; CLAPPER, R. A ; SCHIMMEL, D. G

Journal of applied physics, 1985-01, Vol.57 (10), p.4599-4609 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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8
Single-crystal CsBr infrared fibers
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Single-crystal CsBr infrared fibers

Mimura, Y ; Okamura, Y ; Ota, C

Journal of applied physics, 1982-01, Vol.53 (8), p.5491-5497 [Periódico revisado por pares]

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9
Thermal spin pumping and magnon-phonon-mediated spin-Seebeck effect
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Thermal spin pumping and magnon-phonon-mediated spin-Seebeck effect

Uchida, K ; Ota, T ; Adachi, H ; Xiao, J ; Nonaka, T ; Kajiwara, Y ; Bauer, G E. W ; Maekawa, S ; Saitoh, E

Journal of applied physics, 2012-05, Vol.111 (10), p.103903-103903-12 [Periódico revisado por pares]

American Institute of Physics

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10
A compact model for tunnel field-effect transistors incorporating nonlocal band-to-band tunneling
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A compact model for tunnel field-effect transistors incorporating nonlocal band-to-band tunneling

Fukuda, K. ; Mori, T. ; Mizubayashi, W. ; Morita, Y. ; Tanabe, A. ; Masahara, M. ; Yasuda, T. ; Migita, S. ; Ota, H.

Journal of applied physics, 2013-10, Vol.114 (14) [Periódico revisado por pares]

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