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Refinado por: Nome da Publicação: Defect And Impurity Engineered Semiconductors And Devices remover assunto: Engineering remover assunto: Physical Sciences remover
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The Influence of Non-Stoichiometry on the Electrical Activation of n-Type Dopants in InP
The Influence of Non-Stoichiometry on the Electrical Activation of n-Type Dopants in InP
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The Influence of Non-Stoichiometry on the Electrical Activation of n-Type Dopants in InP

Ridgway, M. C. ; Johnson, C. M. ; KringhØj, P.

MRS proceedings, 1995, Vol.378, p.683-688, Article 683

New York, USA: Cambridge University Press

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2
Probing Metal Defects in CCD Image Sensors
Probing Metal Defects in CCD Image Sensors
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Probing Metal Defects in CCD Image Sensors

McColgin, William C. ; Lavine, J. P. ; Stancampiano, C. V.

MRS proceedings, 1995, Vol.378, p.713-724, Article 713

New York, USA: Cambridge University Press

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3
Resolving Degradation Mechanism in Carbon and Beryllium Doped HBT’s Using Pulsed Mode Current Stress
Resolving Degradation Mechanism in Carbon and Beryllium Doped HBT’s Using Pulsed Mode Current Stress
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Resolving Degradation Mechanism in Carbon and Beryllium Doped HBT’s Using Pulsed Mode Current Stress

Chou, Y. C. ; Li, G.P. ; Wu, C.S. ; Chu, Peter ; Pao, C.K. ; Cisco, T.C.

MRS proceedings, 1995, Vol.378, p.777-782, Article 777

New York, USA: Cambridge University Press

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4
Time Resolved Photoluminescence Spectroscopy on GaN Epitaxial Layers
Time Resolved Photoluminescence Spectroscopy on GaN Epitaxial Layers
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Time Resolved Photoluminescence Spectroscopy on GaN Epitaxial Layers

Meyer, B. K. ; Volm, D. ; Wetzel, C. ; Eckey, L. ; Holst, J.-Ch ; Maxim, P. ; Heitz, R. ; Hoffmann, A. ; Broser, I. ; Mokhov, E. N. ; Baranov, P. G. ; Qiu, C. ; Pankove, J. I.

MRS proceedings, 1995, Vol.378, p.521-526, Article 521

New York, USA: Cambridge University Press

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5
Deep Impurities in AlGaAs Grown by MOCVD Using Different Hydrogen and Nitrogen as Carrier Gases
Deep Impurities in AlGaAs Grown by MOCVD Using Different Hydrogen and Nitrogen as Carrier Gases
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Deep Impurities in AlGaAs Grown by MOCVD Using Different Hydrogen and Nitrogen as Carrier Gases

Chen, J. C. ; Huang, Z. C. ; Yang, Bing ; Chen, H. K. ; Lee, K. J.

MRS proceedings, 1995, Vol.378, p.153-157, Article 153

New York, USA: Cambridge University Press

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6
Hydrogen-Induced Passivation of Deep Traps in n-GaAs:Si Grown on LT-GaAs
Hydrogen-Induced Passivation of Deep Traps in n-GaAs:Si Grown on LT-GaAs
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Hydrogen-Induced Passivation of Deep Traps in n-GaAs:Si Grown on LT-GaAs

Paloura, E. C. ; Ginoudi, A. ; Theys, B. ; Chevallier, J. ; Lioutas, C. B. ; Kalomiros, J. ; Lagadas, M. ; Hatzopoulos, Z.

MRS proceedings, 1995, Vol.378, p.459-464, Article 459

New York, USA: Cambridge University Press

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7
Silicon Delta Doping in GaAs: An Ongoing Enigma
Silicon Delta Doping in GaAs: An Ongoing Enigma
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Silicon Delta Doping in GaAs: An Ongoing Enigma

Newman, R. C. ; Ashwin, M. J. ; Wagner, J. ; Fahy, M. R. ; Hart, L. ; Holmes, S. N. ; Roberts, C.

MRS proceedings, 1995, Vol.378, p.567-578, Article 567

New York, USA: Cambridge University Press

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8
ECR Hydrogen Plasma Treatment of Si: Defect Activation Under Thermal Anneal
ECR Hydrogen Plasma Treatment of Si: Defect Activation Under Thermal Anneal
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ECR Hydrogen Plasma Treatment of Si: Defect Activation Under Thermal Anneal

Nam, C. W. ; Ashok, S.

MRS proceedings, 1995, Vol.378, p.365-370, Article 365

New York, USA: Cambridge University Press

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9
Defects and Future Silicon Technology
Defects and Future Silicon Technology
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Defects and Future Silicon Technology

Palm, J. ; Kimerling, L.C.

MRS proceedings, 1995, Vol.378, p.703-711, Article 703

New York, USA: Cambridge University Press

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10
Photoconductivity as a Function of Temperature in MOCVD Grown Gallium Nitride Films
Photoconductivity as a Function of Temperature in MOCVD Grown Gallium Nitride Films
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Photoconductivity as a Function of Temperature in MOCVD Grown Gallium Nitride Films

Qiu, C. H. ; Melton, W. ; Pankove, J. I.

MRS proceedings, 1995, Vol.378, p.515-520, Article 515

New York, USA: Cambridge University Press

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