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Refinado por: Base de dados/Biblioteca: Academic OneFile remover Nome da Publicação: Electronics Letters remover
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1
InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)
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InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)

Huang, Xue ; Song, Yuncheng ; Masuda, Taizo ; Jung, Daehwan ; Lee, Minjoo

Electronics letters, 2014-08, Vol.50 (17), p.1226-1227 [Periódico revisado por pares]

Stevenage: The Institution of Engineering and Technology

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2
Investigating effect of temperature on barrier height of PWB diodes
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Investigating effect of temperature on barrier height of PWB diodes

Akura, M ; Dunn, G.M

Electronics letters, 2018-01, Vol.54 (1), p.42-43 [Periódico revisado por pares]

The Institution of Engineering and Technology

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3
GaAs/AlGaAs buried-heterostructure vertical-cavity surface-emitting laser with semi-insulating GaInP:Fe regrowth
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GaAs/AlGaAs buried-heterostructure vertical-cavity surface-emitting laser with semi-insulating GaInP:Fe regrowth

Barrios, C Angulo ; Messmer, E Rodriguez ; Risberg, A ; Carlsson, C ; Halonen, J ; Ghisoni, M ; Larsson, A ; Lourdudoss, S

Electronics letters, 2015-03, Vol.51 (18), p.1542-1544 [Periódico revisado por pares]

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4
Multi-quantum well Ga(AsBi)/GaAs laser diodes with more than 6% of bismuth
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Multi-quantum well Ga(AsBi)/GaAs laser diodes with more than 6% of bismuth

Butkutė, R ; Geižutis, A ; Pačebutas, V ; Čechavičius, B ; Bukauskas, V ; Kundrotas, R ; Ludewig, P ; Volz, K ; Krotkus, A

Electronics letters, 2014-07, Vol.50 (16), p.1155-1157 [Periódico revisado por pares]

Stevenage: The Institution of Engineering and Technology

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5
InAs/GaAs p–i–p quantum dots‐in‐a‐well infrared photodetectors operating beyond 200 K
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InAs/GaAs p–i–p quantum dots‐in‐a‐well infrared photodetectors operating beyond 200 K

Park, M.S. ; Jain, V. ; Lee, E.H. ; Kim, S.H. ; Pettersson, H. ; Wang, Q. ; Song, J.D. ; Choi, W.J.

Electronics letters, 2014, Vol.50 (23), p.1731-1733 [Periódico revisado por pares]

Stevenage: The Institution of Engineering and Technology

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6
Sub-sampling of RF and THz waves using LT-GaAs photoconductors under 1550 nm light excitation
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Sub-sampling of RF and THz waves using LT-GaAs photoconductors under 1550 nm light excitation

Billet, M ; Desmet, Y ; Bavedila, F ; Barbieri, S ; Hänsel, W ; Holzwarth, R ; Ducournau, G ; Lampin, J.-F ; Peytavit, E

Electronics letters, 2017-11, Vol.53 (24), p.1596-1598 [Periódico revisado por pares]

The Institution of Engineering and Technology

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7
Inline capacitive RF power sensor based on floating MEMS beam for GaAs MMIC applications
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Inline capacitive RF power sensor based on floating MEMS beam for GaAs MMIC applications

Zhang, Zhiqiang ; Liao, Xiaoping

Electronics letters, 2014-08, Vol.50 (18), p.1292-1294 [Periódico revisado por pares]

Stevenage: The Institution of Engineering and Technology

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8
Low-temperature-grown gallium arsenide photoconductors with subpicosecond carrier lifetime and photoresponse reaching 25 mA/W under 1550 nm CW excitation
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Low-temperature-grown gallium arsenide photoconductors with subpicosecond carrier lifetime and photoresponse reaching 25 mA/W under 1550 nm CW excitation

Tannoury, C ; Billet, M ; Coinon, C ; Lampin, J-F ; Peytavit, E

Electronics letters, 2020-08, Vol.56 (17), p.897-899 [Periódico revisado por pares]

The Institution of Engineering and Technology

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9
DC-16 GHz GaAs track-and-hold amplifier using sampling rate and linearity enhancement techniques
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DC-16 GHz GaAs track-and-hold amplifier using sampling rate and linearity enhancement techniques

Lin, Y.-A ; Chang, H.-Y ; Wang, Y.-C

Electronics letters, 2018-01, Vol.54 (2), p.83-85 [Periódico revisado por pares]

The Institution of Engineering and Technology

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10
Experimental study of recovery time of a bulk gallium arsenide avalanche semiconductor switch in low-energy-triggered mode
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Experimental study of recovery time of a bulk gallium arsenide avalanche semiconductor switch in low-energy-triggered mode

Hu, Long ; Wang, Yaogong ; Xu, Ming

Electronics letters, 2019-06, Vol.55 (12), p.711-712 [Periódico revisado por pares]

The Institution of Engineering and Technology

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