Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)Huang, Xue ; Song, Yuncheng ; Masuda, Taizo ; Jung, Daehwan ; Lee, MinjooElectronics letters, 2014-08, Vol.50 (17), p.1226-1227 [Periódico revisado por pares]Stevenage: The Institution of Engineering and TechnologyTexto completo disponível |
|
2 |
Material Type: Artigo
|
Investigating effect of temperature on barrier height of PWB diodesAkura, M ; Dunn, G.MElectronics letters, 2018-01, Vol.54 (1), p.42-43 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
|
3 |
Material Type: Artigo
|
GaAs/AlGaAs buried-heterostructure vertical-cavity surface-emitting laser with semi-insulating GaInP:Fe regrowthBarrios, C Angulo ; Messmer, E Rodriguez ; Risberg, A ; Carlsson, C ; Halonen, J ; Ghisoni, M ; Larsson, A ; Lourdudoss, SElectronics letters, 2015-03, Vol.51 (18), p.1542-1544 [Periódico revisado por pares]Texto completo disponível |
|
4 |
Material Type: Artigo
|
Multi-quantum well Ga(AsBi)/GaAs laser diodes with more than 6% of bismuthButkutė, R ; Geižutis, A ; Pačebutas, V ; Čechavičius, B ; Bukauskas, V ; Kundrotas, R ; Ludewig, P ; Volz, K ; Krotkus, AElectronics letters, 2014-07, Vol.50 (16), p.1155-1157 [Periódico revisado por pares]Stevenage: The Institution of Engineering and TechnologyTexto completo disponível |
|
5 |
Material Type: Artigo
|
InAs/GaAs p–i–p quantum dots‐in‐a‐well infrared photodetectors operating beyond 200 KPark, M.S. ; Jain, V. ; Lee, E.H. ; Kim, S.H. ; Pettersson, H. ; Wang, Q. ; Song, J.D. ; Choi, W.J.Electronics letters, 2014, Vol.50 (23), p.1731-1733 [Periódico revisado por pares]Stevenage: The Institution of Engineering and TechnologyTexto completo disponível |
|
6 |
Material Type: Artigo
|
Sub-sampling of RF and THz waves using LT-GaAs photoconductors under 1550 nm light excitationBillet, M ; Desmet, Y ; Bavedila, F ; Barbieri, S ; Hänsel, W ; Holzwarth, R ; Ducournau, G ; Lampin, J.-F ; Peytavit, EElectronics letters, 2017-11, Vol.53 (24), p.1596-1598 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
|
7 |
Material Type: Artigo
|
Inline capacitive RF power sensor based on floating MEMS beam for GaAs MMIC applicationsZhang, Zhiqiang ; Liao, XiaopingElectronics letters, 2014-08, Vol.50 (18), p.1292-1294 [Periódico revisado por pares]Stevenage: The Institution of Engineering and TechnologyTexto completo disponível |
|
8 |
Material Type: Artigo
|
Low-temperature-grown gallium arsenide photoconductors with subpicosecond carrier lifetime and photoresponse reaching 25 mA/W under 1550 nm CW excitationTannoury, C ; Billet, M ; Coinon, C ; Lampin, J-F ; Peytavit, EElectronics letters, 2020-08, Vol.56 (17), p.897-899 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
|
9 |
Material Type: Artigo
|
DC-16 GHz GaAs track-and-hold amplifier using sampling rate and linearity enhancement techniquesLin, Y.-A ; Chang, H.-Y ; Wang, Y.-CElectronics letters, 2018-01, Vol.54 (2), p.83-85 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
|
10 |
Material Type: Artigo
|
Experimental study of recovery time of a bulk gallium arsenide avalanche semiconductor switch in low-energy-triggered modeHu, Long ; Wang, Yaogong ; Xu, MingElectronics letters, 2019-06, Vol.55 (12), p.711-712 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |