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InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)
InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)
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InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)

Huang, Xue ; Song, Yuncheng ; Masuda, Taizo ; Jung, Daehwan ; Lee, Minjoo

Electronics letters, 2014-08, Vol.50 (17), p.1226-1227 [Periódico revisado por pares]

Stevenage: The Institution of Engineering and Technology

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2
Multi-quantum well Ga(AsBi)/GaAs laser diodes with more than 6% of bismuth
Multi-quantum well Ga(AsBi)/GaAs laser diodes with more than 6% of bismuth
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Multi-quantum well Ga(AsBi)/GaAs laser diodes with more than 6% of bismuth

Butkutė, R ; Geižutis, A ; Pačebutas, V ; Čechavičius, B ; Bukauskas, V ; Kundrotas, R ; Ludewig, P ; Volz, K ; Krotkus, A

Electronics letters, 2014-07, Vol.50 (16), p.1155-1157 [Periódico revisado por pares]

Stevenage: The Institution of Engineering and Technology

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3
Inline capacitive RF power sensor based on floating MEMS beam for GaAs MMIC applications
Inline capacitive RF power sensor based on floating MEMS beam for GaAs MMIC applications
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Inline capacitive RF power sensor based on floating MEMS beam for GaAs MMIC applications

Zhang, Zhiqiang ; Liao, Xiaoping

Electronics letters, 2014-08, Vol.50 (18), p.1292-1294 [Periódico revisado por pares]

Stevenage: The Institution of Engineering and Technology

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4
Terahertz wireless communication using GaAs transistors as detectors
Terahertz wireless communication using GaAs transistors as detectors
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Terahertz wireless communication using GaAs transistors as detectors

Tohmé, L ; Blin, S ; Ducournau, G ; Nouvel, P ; Coquillat, D ; Hisatake, S ; Nagatsuma, T ; Pénarier, A ; Varani, L ; Knap, W ; Lampin, J.-F

Electronics letters, 2014-02, Vol.50 (4), p.323-325 [Periódico revisado por pares]

Stevenage: The Institution of Engineering and Technology

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5
20–40 GHz dual-gate frequency doubler using 0.5 μm GaAs pHEMT technology
20–40 GHz dual-gate frequency doubler using 0.5 μm GaAs pHEMT technology
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20–40 GHz dual-gate frequency doubler using 0.5 μm GaAs pHEMT technology

Li, Yuan Chun ; Huang, Fan-Hsiu ; Xue, Quan

Electronics letters, 2014-05, Vol.50 (10), p.758-759 [Periódico revisado por pares]

Stevenage: The Institution of Engineering and Technology

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6
Research on temperature characteristic of thermoelectric microwave power sensors based on GaAs MMIC technology
Research on temperature characteristic of thermoelectric microwave power sensors based on GaAs MMIC technology
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Research on temperature characteristic of thermoelectric microwave power sensors based on GaAs MMIC technology

Wang, De-Bo ; Liao, Xiaoping

Electronics letters, 2013-11, Vol.49 (23), p.1462-1464 [Periódico revisado por pares]

Stevenage: The Institution of Engineering and Technology

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7
Effect of electric field on exciton in high‐purity GaAs epilayer measured at room temperature
Effect of electric field on exciton in high‐purity GaAs epilayer measured at room temperature
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Effect of electric field on exciton in high‐purity GaAs epilayer measured at room temperature

Kayastha, M.S. ; Sapkota, D.P. ; Takahashi, M. ; Wakita, K.

Electronics letters, 2013-01, Vol.49 (1), p.57-58 [Periódico revisado por pares]

Stevenage: The Institution of Engineering and Technology

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8
Surface-activating-bonding-based low-resistance Si/III-V junctions
Surface-activating-bonding-based low-resistance Si/III-V junctions
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Surface-activating-bonding-based low-resistance Si/III-V junctions

Liang, J ; Nishida, S ; Morimoto, M ; Shigekawa, N

Electronics letters, 2013-06, Vol.49 (13), p.830-832 [Periódico revisado por pares]

Stevenage: The Institution of Engineering and Technology

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9
Fabrication of 2-D photonic bandgap structures in GaAs/AlGaAs
Fabrication of 2-D photonic bandgap structures in GaAs/AlGaAs
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Fabrication of 2-D photonic bandgap structures in GaAs/AlGaAs

KRAUSS, T ; SONG, Y. P ; THOMS, S ; WILKINSON, C. D. W ; DELARUE, R. M

Electronics letters, 1994-08, Vol.30 (17), p.1444-1446 [Periódico revisado por pares]

London: Institution of Electrical Engineers

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10
High-power in-phase coherently coupled VCSEL array based on proton implantation
High-power in-phase coherently coupled VCSEL array based on proton implantation
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High-power in-phase coherently coupled VCSEL array based on proton implantation

Xun, Meng ; Xu, Chen ; Xie, Yiyang ; Zhu, Yanxu ; Mao, Mingming ; Xu, Kun ; Wang, Jun ; Liu, Jie ; Chen, Hongda

Electronics letters, 2014-07, Vol.50 (15), p.1085-1086 [Periódico revisado por pares]

Stevenage: The Institution of Engineering and Technology

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