Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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11 |
Material Type: Artigo
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Non‐stoichiometric GaAs – prospective material for compact THz emittersBeleckaitė, I. ; Adomavičius, R. ; Butkutė, R. ; Pačebutas, V. ; Molis, G. ; Bukauskas, V. ; Selskis, A. ; Krotkus, A.Electronics letters, 2016-11, Vol.52 (23), p.1954-1956 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
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12 |
Material Type: Artigo
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340 GHz lens-coupled 4 × 4 GaAs detector array for terahertz imaging applicationsLi, Mingxun ; Lv, Xin ; Mou, Jinchao ; Guo, Dalu ; Qiao, Haidong ; Ma, Zhaohui ; Hao, HaidongElectronics letters, 2018-10, Vol.54 (20), p.1180-1182 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
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13 |
Material Type: Artigo
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Improved thermal management of power cells with adding cooling path from collector to groundTian, Ting ; Sun, Xiaohong ; Gao, Huai ; Lu, ShengliElectronics letters, 2019-05, Vol.55 (9), p.513-515 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
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14 |
Material Type: Artigo
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Terahertz wireless communication using GaAs transistors as detectorsTohmé, L ; Blin, S ; Ducournau, G ; Nouvel, P ; Coquillat, D ; Hisatake, S ; Nagatsuma, T ; Pénarier, A ; Varani, L ; Knap, W ; Lampin, J.-FElectronics letters, 2014-02, Vol.50 (4), p.323-325 [Periódico revisado por pares]Stevenage: The Institution of Engineering and TechnologyTexto completo disponível |
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15 |
Material Type: Artigo
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K-band frequency-selective limiter using an injection locked oscillator for blocker cancellationChoi, K ; Jung, J ; Park, H ; Seo, T ; Jeong, J ; Kwon, YElectronics letters, 2018-04, Vol.54 (7), p.450-452 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
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16 |
Material Type: Artigo
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world's highest Q-FactorElectronics letters, 2018-03, Vol.54 (5), p.257-257 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
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17 |
Material Type: Artigo
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High dynamic range single channel sampling of wideband RF signals using ultra-fast nanoscale photoconductive switchingTripon-Canseliet, C ; Zegaoui, M ; Jestin, G ; Coinon, C ; Berger, P ; Baili, G ; Descamps-Mandine, A ; Maksimovic, I ; Decoster, D ; Hodé, J.M ; Dolfi, D ; Chazelas, JElectronics letters, 2016-02, Vol.52 (3), p.237-239 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
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18 |
Material Type: Artigo
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20–40 GHz dual-gate frequency doubler using 0.5 μm GaAs pHEMT technologyLi, Yuan Chun ; Huang, Fan-Hsiu ; Xue, QuanElectronics letters, 2014-05, Vol.50 (10), p.758-759 [Periódico revisado por pares]Stevenage: The Institution of Engineering and TechnologyTexto completo disponível |
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19 |
Material Type: Artigo
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High-performance dual-channel InGaAs MOSFET for small signal RF applicationsAdhikari, M.S ; Singh, YElectronics letters, 2015-07, Vol.51 (15), p.1203-1205 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
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20 |
Material Type: Artigo
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light at the end of the tunnelAnon., AnonElectronics letters, 2014-04, Vol.50 (9), p.645-645 [Periódico revisado por pares]Stevenage: The Institution of Engineering and TechnologyTexto completo disponível |