Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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New Insights about the Importance of the Alteration Layer/Glass InterfaceTribet, Magaly ; Mir, Anamul H ; Gillet, Célia ; Jegou, Christophe ; Mougnaud, Sarah ; Hinks, Jonathan. A ; Donnelly, Stephen. E ; Peuget, SylvainJournal of physical chemistry. C, 2020-05, Vol.124 (18), p.10032-10044 [Periódico revisado por pares]American Chemical SocietyTexto completo disponível |
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2 |
Material Type: Artigo
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Ballistic-damage-induced size changes in equilibrium and under-pressurized Xe precipitates in amorphous silicaMir, Anamul H. ; Hinks, Jonathan A. ; Donnelly, Stephen E.Journal of nuclear materials, 2019-06, Vol.519, p.229-238 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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Understanding amorphization mechanisms using ion irradiation in situ a TEM and 3D damage reconstructionCamara, Osmane ; Tunes, Matheus A. ; Greaves, Graeme ; Mir, Anamul H. ; Donnelly, Stephen ; Hinks, Jonathan A.Ultramicroscopy, 2019-12, Vol.207, p.112838-112838, Article 112838 [Periódico revisado por pares]Netherlands: Elsevier B.VTexto completo disponível |
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4 |
Material Type: Artigo
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Reversible Loss of Bernal Stacking during the Deformation of Few-Layer Graphene in NanocompositesGong, Lei ; Young, Robert J ; Kinloch, Ian A ; Haigh, Sarah J ; Warner, Jamie H ; Hinks, Jonathan A ; Xu, Ziwei ; Li, Li ; Ding, Feng ; Riaz, Ibtsam ; Jalil, Rashid ; Novoselov, Kostya SACS nano, 2013-08, Vol.7 (8), p.7287-7294 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
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5 |
Material Type: Artigo
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Study on the dissolution of β-precipitates in the Zr–1Nb alloy under the influence of Ne ion irradiationGoel, Lokesh ; Mir, Anamul H ; Naveen Kumar, N ; Satyam, Parlapalli V ; Hinks, Jonathan A ; Donelly, Stephen E ; Tewari, RaghvendraMicroscopy, 2021-10, Vol.70 (5), p.461-468 [Periódico revisado por pares]UK: Oxford University PressTexto completo disponível |
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6 |
Material Type: Artigo
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Effect of density and Z-contrast on the visibility of noble gas precipitates and voids with insights from Monte-Carlo simulationsMir, Anamul H. ; Hinks, Jonathan A. ; Donnelly, Stephen E.Micron (Oxford, England : 1993), 2019-11, Vol.126, p.102712-102712, Article 102712 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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7 |
Material Type: Artigo
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Ion-beam-induced bending of semiconductor nanowiresHanif, Imran ; Camara, Osmane ; Tunes, Matheus A ; Harrison, Robert W ; Greaves, Graeme ; Donnelly, Stephen E ; Hinks, Jonathan ANanotechnology, 2018-08, Vol.29 (33), p.335701-335701 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
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8 |
Material Type: Artigo
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Investigating Helium Bubble Nucleation and Growth through Simultaneous In-Situ Cryogenic, Ion Implantation, and Environmental Transmission Electron MicroscopyTaylor, Caitlin A ; Briggs, Samuel ; Greaves, Graeme ; Monterrosa, Anthony ; Aradi, Emily ; Sugar, Joshua D ; Robinson, David B ; Hattar, Khalid ; Hinks, Jonathan AMaterials, 2019-08, Vol.12 (16), p.2618 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
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9 |
Material Type: Artigo
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Ion implantation in nanodiamonds: size effect and energy dependenceShiryaev, Andrey A ; Hinks, Jonathan A ; Marks, Nigel A ; Greaves, Graeme ; Valencia, Felipe J ; Donnelly, Stephen E ; González, Rafael I ; Kiwi, Miguel ; Trigub, Alexander L ; Bringa, Eduardo M ; Fogg, Jason L ; Vlasov, Igor IScientific reports, 2018-03, Vol.8 (1), p.5099-9, Article 5099 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
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10 |
Material Type: Artigo
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In-Situ Helium Implantation and TEM Investigation of Radiation Tolerance to Helium Bubble Damage in Equiaxed Nanocrystalline Tungsten and Ultrafine Tungsten-TiC AlloyEl Atwani, Osman ; Unal, Kaan ; Cunningham, William Streit ; Fensin, Saryu ; Hinks, Jonathan ; Greaves, Graeme ; Maloy, StuartMaterials, 2020-02, Vol.13 (3), p.794 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |