Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on 2D Materials for Electronic, Optoelectronic and Sensor DevicesIEEE electron device letters, 2018-02, Vol.39 (2), p.324-324 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
2 |
Material Type: Artigo
|
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on 2D Materials for Electronic, Optoelectronic and Sensor DevicesIEEE electron device letters, 2018-01, Vol.39 (1), p.162-162 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
3 |
Material Type: Artigo
|
High-Temperature Performance of AlN MESFETs With Epitaxially Grown n-Type AlN Channel LayersHiroki, Masanobu ; Taniyasu, Yoshitaka ; Kumakura, KazuhideIEEE electron device letters, 2022-03, Vol.43 (3), p.350-353 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
4 |
Material Type: Artigo
|
Demonstration of High Performance Flexible In0.7Ga0.3As MOSFETs Using Liquid Polyimide (LPI) TransferPark, Saungeun ; Kim, Do-Kywn ; Cho, Young-Dae ; Shim, Jae-Phil ; Shin, Chan-Soo ; Shin, Seung HeonIEEE electron device letters, 2022-06, Vol.43 (6), p.858-861 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
5 |
Material Type: Artigo
|
Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED DisplayKwon, Jang Yeon ; Son, Kyoung Seok ; Jung, Ji Sim ; Kim, Tae Sang ; Ryu, Myung Kwan ; Park, Kyung Bae ; Yoo, Byung Wook ; Kim, Jung Woo ; Lee, Young Gu ; Park, Kee Chan ; Lee, Sang Yoon ; Kim, Jong MinIEEE electron device letters, 2008-12, Vol.29 (12), p.1309-1311 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
|
6 |
Material Type: Artigo
|
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on 2D Materials for Electronic, Optoelectronic and Sensor DevicesIEEE electron device letters, 2018-03, Vol.39 (3), p.455-455 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
7 |
Material Type: Artigo
|
High-Performance and Multifunctional Devices-Based Optoelectronic Memory With the 2D Narrow Bandgap Bi2Te2.7Se0.3Wang, Hong ; Gao, Chao ; Yan, XiaobingIEEE electron device letters, 2020-10, Vol.41 (10), p.1504-1507 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
8 |
Material Type: Artigo
|
A High-Performance Single-Photon Avalanche Diode in 130-nm CMOS Imaging TechnologyWebster, E. A. G. ; Grant, L. A. ; Henderson, R. K.IEEE electron device letters, 2012-11, Vol.33 (11), p.1589-1591 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
|
9 |
Material Type: Artigo
|
Monolithic Integration of AlGaN/GaN HEMT on LED by MOCVDLiu, Zhao Jun ; Huang, Tongde ; Ma, Jun ; Liu, Chao ; Lau, Kei MayIEEE electron device letters, 2014-03, Vol.35 (3), p.330-332 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
|
10 |
Material Type: Artigo
|
High-Gain AlGaN Solar-Blind Avalanche PhotodiodesShao, Zhen Guang ; Chen, Dun Jun ; Lu, Hai ; Zhang, Rong ; Cao, Da Peng ; Luo, Wen Jun ; Zheng, You Dou ; Li, Liang ; Li, Zhong HuiIEEE electron device letters, 2014-03, Vol.35 (3), p.372-374 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |