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Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on 2D Materials for Electronic, Optoelectronic and Sensor Devices
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Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on 2D Materials for Electronic, Optoelectronic and Sensor Devices

IEEE electron device letters, 2018-02, Vol.39 (2), p.324-324 [Periódico revisado por pares]

New York: IEEE

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Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on 2D Materials for Electronic, Optoelectronic and Sensor Devices
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Artigo
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Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on 2D Materials for Electronic, Optoelectronic and Sensor Devices

IEEE electron device letters, 2018-01, Vol.39 (1), p.162-162 [Periódico revisado por pares]

New York: IEEE

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3
High-Temperature Performance of AlN MESFETs With Epitaxially Grown n-Type AlN Channel Layers
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High-Temperature Performance of AlN MESFETs With Epitaxially Grown n-Type AlN Channel Layers

Hiroki, Masanobu ; Taniyasu, Yoshitaka ; Kumakura, Kazuhide

IEEE electron device letters, 2022-03, Vol.43 (3), p.350-353 [Periódico revisado por pares]

New York: IEEE

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4
Demonstration of High Performance Flexible In0.7Ga0.3As MOSFETs Using Liquid Polyimide (LPI) Transfer
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Demonstration of High Performance Flexible In0.7Ga0.3As MOSFETs Using Liquid Polyimide (LPI) Transfer

Park, Saungeun ; Kim, Do-Kywn ; Cho, Young-Dae ; Shim, Jae-Phil ; Shin, Chan-Soo ; Shin, Seung Heon

IEEE electron device letters, 2022-06, Vol.43 (6), p.858-861 [Periódico revisado por pares]

New York: IEEE

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5
Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display
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Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display

Kwon, Jang Yeon ; Son, Kyoung Seok ; Jung, Ji Sim ; Kim, Tae Sang ; Ryu, Myung Kwan ; Park, Kyung Bae ; Yoo, Byung Wook ; Kim, Jung Woo ; Lee, Young Gu ; Park, Kee Chan ; Lee, Sang Yoon ; Kim, Jong Min

IEEE electron device letters, 2008-12, Vol.29 (12), p.1309-1311 [Periódico revisado por pares]

New York, NY: IEEE

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6
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on 2D Materials for Electronic, Optoelectronic and Sensor Devices
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Artigo
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Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on 2D Materials for Electronic, Optoelectronic and Sensor Devices

IEEE electron device letters, 2018-03, Vol.39 (3), p.455-455 [Periódico revisado por pares]

New York: IEEE

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7
High-Performance and Multifunctional Devices-Based Optoelectronic Memory With the 2D Narrow Bandgap Bi2Te2.7Se0.3
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High-Performance and Multifunctional Devices-Based Optoelectronic Memory With the 2D Narrow Bandgap Bi2Te2.7Se0.3

Wang, Hong ; Gao, Chao ; Yan, Xiaobing

IEEE electron device letters, 2020-10, Vol.41 (10), p.1504-1507 [Periódico revisado por pares]

New York: IEEE

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8
A High-Performance Single-Photon Avalanche Diode in 130-nm CMOS Imaging Technology
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A High-Performance Single-Photon Avalanche Diode in 130-nm CMOS Imaging Technology

Webster, E. A. G. ; Grant, L. A. ; Henderson, R. K.

IEEE electron device letters, 2012-11, Vol.33 (11), p.1589-1591 [Periódico revisado por pares]

New York, NY: IEEE

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9
Monolithic Integration of AlGaN/GaN HEMT on LED by MOCVD
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Monolithic Integration of AlGaN/GaN HEMT on LED by MOCVD

Liu, Zhao Jun ; Huang, Tongde ; Ma, Jun ; Liu, Chao ; Lau, Kei May

IEEE electron device letters, 2014-03, Vol.35 (3), p.330-332 [Periódico revisado por pares]

New York, NY: IEEE

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10
High-Gain AlGaN Solar-Blind Avalanche Photodiodes
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High-Gain AlGaN Solar-Blind Avalanche Photodiodes

Shao, Zhen Guang ; Chen, Dun Jun ; Lu, Hai ; Zhang, Rong ; Cao, Da Peng ; Luo, Wen Jun ; Zheng, You Dou ; Li, Liang ; Li, Zhong Hui

IEEE electron device letters, 2014-03, Vol.35 (3), p.372-374 [Periódico revisado por pares]

New York, NY: IEEE

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