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Effects of Ni, Pd, and Pt Substitutions on Thermoelectric Properties of CoSi Alloys
Effects of Ni, Pd, and Pt Substitutions on Thermoelectric Properties of CoSi Alloys
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Effects of Ni, Pd, and Pt Substitutions on Thermoelectric Properties of CoSi Alloys

Sun, Hui ; Lu, Xu ; Morelli, Donald T.

Journal of Electronic Materials, 2013-07, Vol.42 (7), p.1352-1357 [Periódico revisado por pares]

Boston: Springer US

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2
High Thermoelectric Power Factor Near Room Temperature in Full-Heusler Alloys
High Thermoelectric Power Factor Near Room Temperature in Full-Heusler Alloys
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High Thermoelectric Power Factor Near Room Temperature in Full-Heusler Alloys

Skoug, Eric J. ; Zhou, Chen ; Pei, Yanzhong ; Morelli, Donald T.

Journal of electronic materials, 2009-07, Vol.38 (7), p.1221-1223 [Periódico revisado por pares]

Boston: Springer US

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3
Thermoelectric Properties of Cobalt-Doped β-FeSi2 with SiC Nanoparticle Inclusions
Thermoelectric Properties of Cobalt-Doped β-FeSi2 with SiC Nanoparticle Inclusions
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Thermoelectric Properties of Cobalt-Doped β-FeSi2 with SiC Nanoparticle Inclusions

Sun, Hui ; Lu, Xu ; Morelli, Donald T.

Journal of electronic materials, 2021-06, Vol.50 (6), p.3288-3294 [Periódico revisado por pares]

New York: Springer US

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4
Effect of Cr and Fe Substitution on the Transport Properties of the Nowotny Chimney–Ladder MnSiδ (1.73 < δ < 1.75) Compounds
Effect of Cr and Fe Substitution on the Transport Properties of the Nowotny Chimney–Ladder MnSiδ (1.73 < δ < 1.75) Compounds
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Effect of Cr and Fe Substitution on the Transport Properties of the Nowotny Chimney–Ladder MnSiδ (1.73 < δ < 1.75) Compounds

Ponnambalam, V. ; Morelli, Donald T.

Journal of Electronic Materials, 2012-06, Vol.41 (6), p.1389-1394 [Periódico revisado por pares]

Boston: Springer US

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5
The Thermoelectric Properties and Solubility Limit of CuFeS2(1&#8722;x)Se2x
The Thermoelectric Properties and Solubility Limit of CuFeS2(1&#8722;x)Se2x
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The Thermoelectric Properties and Solubility Limit of CuFeS2(1−x)Se2x

Carr, Winston D. ; Morelli, Donald T.

Journal of electronic materials, 2016-03, Vol.45 (3), p.1346-1350 [Periódico revisado por pares]

New York: Springer US

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6
Thermoelectric Properties of Mn-Doped Cu2SnSe3
Thermoelectric Properties of Mn-Doped Cu2SnSe3
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Thermoelectric Properties of Mn-Doped Cu2SnSe3

Lu, Xu ; Morelli, Donald T.

Journal of Electronic Materials, 2012-06, Vol.41 (6), p.1554-1558 [Periódico revisado por pares]

Boston: Springer US

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7
Using Ge Secondary Phases to Enhance the Power Factor and Figure of Merit of Ge17Sb2Te20
Using Ge Secondary Phases to Enhance the Power Factor and Figure of Merit of Ge17Sb2Te20
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Using Ge Secondary Phases to Enhance the Power Factor and Figure of Merit of Ge17Sb2Te20

Williams, Jared B. ; Morelli, Donald T.

Journal of electronic materials, 2017-05, Vol.46 (5), p.2652-2661 [Periódico revisado por pares]

New York: Springer US

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8
Thermoelectric Properties of Hot-Pressed and PECS-Sintered Magnesium-Doped Copper Aluminum Oxide
Thermoelectric Properties of Hot-Pressed and PECS-Sintered Magnesium-Doped Copper Aluminum Oxide
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Thermoelectric Properties of Hot-Pressed and PECS-Sintered Magnesium-Doped Copper Aluminum Oxide

Liu, Chang ; Morelli, Donald T.

Journal of Electronic Materials, 2011-05, Vol.40 (5), p.678-681 [Periódico revisado por pares]

Boston: Springer US

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9
Improved Thermoelectric Performance in Cu-Based Ternary Chalcogenides Using S for Se Substitution
Improved Thermoelectric Performance in Cu-Based Ternary Chalcogenides Using S for Se Substitution
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Improved Thermoelectric Performance in Cu-Based Ternary Chalcogenides Using S for Se Substitution

Skoug, Eric J. ; Cain, Jeffrey D. ; Morelli, Donald T.

Journal of electronic materials, 2012-06, Vol.41 (6), p.1232-1236 [Periódico revisado por pares]

Boston: Springer US

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10
Improved Thermoelectric Properties in Ga2Te3-GaSb Vacancy Compounds
Improved Thermoelectric Properties in Ga2Te3-GaSb Vacancy Compounds
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Improved Thermoelectric Properties in Ga2Te3-GaSb Vacancy Compounds

Yang, Hao ; Morelli, Donald T.

Journal of electronic materials, 2012-06, Vol.41 (6), p.1720-1724 [Periódico revisado por pares]

Boston: Springer US

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