Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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AlGaAs/GaAs heterojunction bipolar transistors with small size fabricated by a multiple self-alignment process using one maskInada, M. ; Ota, Y. ; Nakagawa, A. ; Yanagihara, M. ; Hirose, T. ; Eda, K.IEEE transactions on electron devices, 1987-12, Vol.34 (12), p.2405-2411 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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Application of Si MBE to microwave hyperabrupt diodesGoodwin, C.A. ; Ota, Y.IEEE transactions on electron devices, 1979-11, Vol.26 (11), p.1796-1799 [Periódico revisado por pares]IEEETexto completo disponível |
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3 |
Material Type: Artigo
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Room-temperature continuous wave vertical surface-emitting GaAs injection lasers grown by molecular-beam epitaxyTai, K. ; Fischer, R.J. ; Seabury, C.W. ; Olson, N.A. ; Huo, D.T.C. ; Ota, Y. ; Deppe, D.G. ; Cho, A.Y.IEEE transactions on electron devices, 1989-11, Vol.36 (11), p.2628 [Periódico revisado por pares]IEEETexto completo disponível |
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4 |
Material Type: Artigo
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IIIB-7 low barrier height Schottky diode for microwave mixer using super thin Si MBE filmBallamy, W.C. ; Ota, Y.IEEE transactions on electron devices, 1981-10, Vol.28 (10), p.1230-1230 [Periódico revisado por pares]IEEETexto completo disponível |
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5 |
Material Type: Artigo
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IIIB-5 a technique for rapidly alternating boron and arsenic doping in ion-implanted silicon molecular beam epitaxyMcFee, J.H. ; Swartz, R.G. ; Voshchenkov, A.M. ; Feldman, L.C. ; Ota, Y.IEEE transactions on electron devices, 1981-10, Vol.28 (10), p.1228-1229 [Periódico revisado por pares]IEEETexto completo disponível |
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6 |
Material Type: Artigo
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Monolithically integrated receiver front end: In/sub 0.53/Ga/sub 0.47/As p-i-n amplifierCheng, C.-L. ; Chang, R.P.H. ; Tell, B. ; Parker, S.M.Z. ; Ota, Y. ; Vella-Coleiro, G.P. ; Miller, R.C. ; Zilko, J.L. ; Kasper, B.L. ; Brown-Goebeler, K.F. ; Mattera, V.D.IEEE transactions on electron devices, 1988-09, Vol.35 (9), p.1439-1444 [Periódico revisado por pares]IEEETexto completo disponível |
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7 |
Material Type: Artigo
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Monolithically integrated receiver front end: In sub(0.53)Ga sub(0.47)As p-i-n amplifierCheng, Chu-Liang ; Chang, R P H ; Tell, B ; Zima Parker, S M ; Ota, Y ; Vella-Coleiro, G P ; Miller, R C ; Zilko, J L ; Kasper, B LIEEE transactions on electron devices, 1988-01, Vol.35 (9), p.1439-1444 [Periódico revisado por pares]Texto completo disponível |
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8 |
Material Type: Artigo
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IIIA-8 monolithically integrated receiver front-end: In 0.53 Ga 0.47 As PIN-amplifierChu-Liang Cheng ; Chang, R.P.H. ; Tell, B. ; Zima, S.M. ; Ota, Y. ; Vella-Coleiro, G.P. ; Miller, R.C. ; Zilko, J.L. ; Kasper, B.L. ; Brown-Goebeler, K.F. ; Mattera, V.D.IEEE transactions on electron devices, 1987-11, Vol.34 (11), p.2365-2365 [Periódico revisado por pares]Texto completo disponível |
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9 |
Material Type: Artigo
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Monolithically integrated receiver front end: In0.53Ga0.47As p-i-n amplifierCHU-LIANG CHENG ; CHANG, R. P. H ; MATTERA, V. D. JR ; TELL, B ; PARKER, S. M. Z ; OTA, Y ; VELLA-COLEIRO, G. P ; MILLER, R. C ; ZILKO, J. L ; KASPER, B. L ; BROWN-GOEBELER, K. FIEEE transactions on electron devices, 1988-09, Vol.35 (9), p.1439-1444 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
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10 |
Material Type: Artigo
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IIIA-8 monolithically integrated receiver front-end: In(0.53 < /inf > Ga(0.47 < /inf > As PIN-amplifierCheng, Chu-Liang ; Chang, R P H ; Tell, B ; Zima, S M ; Ota, Y ; Vella-Coleiro, G P ; Miller, R C ; Zilko, J L ; Kasper, B L ; Brown-Goebeler, K F ; Mattera, V DIEEE transactions on electron devices, 1987-11, Vol.34 (11), p.2365-2365 [Periódico revisado por pares]Texto completo disponível |