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Refinado por: autor: Ragi, R remover assunto: Semicondutores remover
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1
I-V characteristics of Schottky contacts based on quantum wires
I-V characteristics of Schottky contacts based on quantum wires
Material Type:
Artigo 		Adicionar ao Meu Espaço

I-V characteristics of Schottky contacts based on quantum wires

Regiane Ragi Murilo Araújo Romero

Microelectronics Journal Kidlington v. 37, n. 11, p. 1261-1264, Nov. 2006

Kidlington 2006

Acesso online

2
I-V characteristics of Schottky contacts based on quantum wires
I-V characteristics of Schottky contacts based on quantum wires
Material Type:
Artigo 		Adicionar ao Meu Espaço

I-V characteristics of Schottky contacts based on quantum wires

Regiane Ragi Murilo Araújo Romero

Microelectronics Journal Kidlington v. 37, n. 11, p. 1261-1264, Nov. 2006

Kidlington 2006

Acesso online

3
A novel self consistent calculation approach for the capacitance-voltage characteristics of semiconductor quantum wire transistors based on a split-gate configuration
A novel self consistent calculation approach for the capacitance-voltage characteristics of semiconductor quantum wire transistors based on a split-gate configuration
Material Type:
Artigo 		Adicionar ao Meu Espaço

A novel self consistent calculation approach for the capacitance-voltage characteristics of semiconductor quantum wire transistors based on a split-gate configuration

Regiane Ragi Rafael Vinícius Tayette da Nóbrega; Murilo Araujo Romero

COMPEL : the international journal for computation and mathematics in electrical and electronic engineering Bingley v. 31, n. 2, p. 460-476, 2012

Bingley 2012

Item não circula. Consulte sua biblioteca.(Acessar)

4
A novel self consistent calculation approach for the capacitance-voltage characteristics of semiconductor quantum wire transistors based on a split-gate configuration
A novel self consistent calculation approach for the capacitance-voltage characteristics of semiconductor quantum wire transistors based on a split-gate configuration
Material Type:
Artigo 		Adicionar ao Meu Espaço

A novel self consistent calculation approach for the capacitance-voltage characteristics of semiconductor quantum wire transistors based on a split-gate configuration

Regiane Ragi Rafael Vinícius Tayette da Nóbrega; Murilo Araujo Romero

COMPEL : the international journal for computation and mathematics in electrical and electronic engineering Bingley v. 31, n. 2, p. 460-476, 2012

Bingley 2012

Item não circula. Consulte sua biblioteca.(Acessar)

5
Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs
Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs
Material Type:
Artigo 		Adicionar ao Meu Espaço

Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs

Adelcio Marques de Souza Daniel Ricardo Celino; Regiane Ragi; Murilo Araujo Romero

Microelectronics Journal v. 119, article 105324, p. 1-8, 2022

London, UK 2022

Localização: EESC - Esc. Engenharia de São Carlos    (PROD-027000 )(Acessar)

6
Theoretical model of the resonant tunneling nanowires by the transfer-matrix method
Theoretical model of the resonant tunneling nanowires by the transfer-matrix method
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Theoretical model of the resonant tunneling nanowires by the transfer-matrix method

Rafael Vinicius Tayette da Nobrega Regiane Ragi; Murilo Araujo Romero; Brazilian Workshop on Semiconductor Physics (15. 2011 Juiz de Fora, MG)

Juiz de Fora: UFJF, 2011

Juiz de Fora UFJF 2011

Item não circula. Consulte sua biblioteca.(Acessar)

7
An explicit quantum-mechanical compact model for the I-V characteristics of cylindrical nanowire MOSFETs
An explicit quantum-mechanical compact model for the I-V characteristics of cylindrical nanowire MOSFETs
Material Type:
Artigo 		Adicionar ao Meu Espaço

An explicit quantum-mechanical compact model for the I-V characteristics of cylindrical nanowire MOSFETs

Regiane Ragi Rafael Vinicius Tayette da Nobrega; Ulysses Rondina Duarte; Murilo Araújo Romero

IEEE Transactions on Nanotechnology Piscataway, NJ, USA : IEEE, 2016 v. 15, n. 4, p. 627-634, July 2016

Piscataway, NJ, USA 2016

Item não circula. Consulte sua biblioteca.(Acessar)

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Deste Autor:

  1. Ragi, R
  2. Romero, M
  3. Nóbrega, R
  4. Nobrega, R
  5. Duarte, U

Neste Assunto:

  1. Transistores
  2. Emissão Termoiônica
  3. Modelos Matemáticos
  4. Nanoeletrônica
  5. Engenharia Elétrica

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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