Planar-to-homeotropic structure transition under electric field in an A -phase smectic

Hareng, M. ; Le Berre, S. ; Metzger, J. J.

Applied physics letters, , Vol.27 (11), p.575-576 [Periódico revisado por pares]

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High-efficiency, flexible CdTe solar cells on ultra-thin glass substrates

Mahabaduge, H. P. ; Rance, W. L. ; Burst, J. M. ; Reese, M. O. ; Meysing, D. M. ; Wolden, C. A. ; Li, J. ; Beach, J. D. ; Gessert, T. A. ; Metzger, W. K. ; Garner, S. ; Barnes, T. M.

Applied physics letters, 2015-03, Vol.106 (13) [Periódico revisado por pares]

Melville: American Institute of Physics

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Generation and recombination rates at ZnTe:O intermediate band states

Wang, Weiming ; Lin, Albert S ; Phillips, Jamie D ; Metzger, Wyatt K

Applied physics letters, 2009-12, Vol.95 (26), p.261107-261107-3 [Periódico revisado por pares]

United States: American Institute of Physics

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Optical cooling of a micromirror of wavelength size

Favero, I ; Metzger, C ; Camerer, S ; König, D ; Lorenz, H ; Kotthaus, J P ; Karrai, K

Applied physics letters, 2007-03, Vol.90 (10), p.104101-104101-3 [Periódico revisado por pares]

American Institute of Physics

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Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films

Angerer, H. ; Brunner, D. ; Freudenberg, F. ; Ambacher, O. ; Stutzmann, M. ; Höpler, R. ; Metzger, T. ; Born, E. ; Dollinger, G. ; Bergmaier, A. ; Karsch, S. ; Körner, H.-J.

Applied physics letters, 1997-09, Vol.71 (11), p.1504-1506 [Periódico revisado por pares]

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Study of the effect of dielectric porosity on the stress in advanced Cu/low- k interconnects using x-ray diffraction

Wilson, C J ; Zhao, C ; Zhao, L ; Metzger, T H ; Tőkei, Zs ; Croes, K ; Pantouvaki, M ; Beyer, G P ; Horsfall, A B ; O'Neill, A G

Applied physics letters, 2009-05, Vol.94 (18), p.181914-181914-3 [Periódico revisado por pares]

American Institute of Physics

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Auger recombination in low-band-gap n -type InGaAs

Metzger, W. K. ; Wanlass, M. W. ; Ellingson, R. J. ; Ahrenkiel, R. K. ; Carapella, J. J.

Applied physics letters, 2001-11, Vol.79 (20), p.3272-3274 [Periódico revisado por pares]

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Effect of growth rate and gallium source on GaAsN

Kurtz, Sarah ; Geisz, J. F. ; Keyes, B. M. ; Metzger, W. K. ; Friedman, D. J. ; Olson, J. M. ; Ptak, A. J. ; King, R. R. ; Karam, N. H.

Applied physics letters, 2003-04, Vol.82 (16), p.2634-2636 [Periódico revisado por pares]

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Zero-strain GaAs quantum dot molecules as investigated by x-ray diffuse scattering

Hanke, M ; Schmidbauer, M ; Grigoriev, D ; Schäfer, P ; Köhler, R ; Metzger, T H ; Wang, Zh M ; Mazur, Yu I ; Salamo, G J

Applied physics letters, 2006-07, Vol.89 (5), p.053116-053116-3 [Periódico revisado por pares]

United States: American Institute of Physics

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Lateral ordering of coherent Ge islands on Si(001) studied by triple-crystal grazing incidence diffraction

Kegel, I. ; Metzger, T. H. ; Peisl, J. ; Schittenhelm, P. ; Abstreiter, G.

Applied physics letters, 1999-05, Vol.74 (20), p.2978-2980 [Periódico revisado por pares]

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