Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Identifying the crystal orientation of epitaxially grown MoO2 nanoflakes on c-sapphireJiang, Junjie ; Yang, Dingbang ; Wang, Yongsong ; Guo, Xiao ; Yassine, Madoune ; Huang, Wenqiang ; Xu, Tao ; Wang, Shanshan ; Huang, Han ; Ouyang, Fangping ; Gao, YongliApplied surface science, 2022-12, Vol.606, p.154983, Article 154983 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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Growth Temperature Effects in Nanoscale-Thick GaTe Films on c‑Sapphire Substrate by Molecular Beam Epitaxy: Implications for High-Performance Optoelectronic DevicesKumar, Nand ; Kandar, Santanu ; Bhatt, Kamlesh ; Kapoor, Ashok ; Singh, RajendraACS applied nano materials, 2024-05, Vol.7 (9), p.10870-10878 [Periódico revisado por pares]American Chemical SocietyTexto completo disponível |
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3 |
Material Type: Artigo
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Magnetron Sputter-Deposited β-Ga2O3 Films on c-Sapphire Substrate: Effect of Rapid Thermal Annealing Temperature on Crystalline QualityPech, Sakal ; Kim, Sara ; Kim, Nam-HoonCoatings (Basel), 2022-02, Vol.12 (2), p.140 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
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4 |
Material Type: Artigo
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An Increase of Threading Dislocations Filtering Efficiency in Al2O3 Templates with Faceted Surface Morphology During a Growth by Molecular Beam EpitaxyMyasoedov, A. V. ; Nechaev, D. V. ; Ratnikov, V. V. ; Kalmykov, A. E. ; Sorokin, L. M. ; Jmerik, V. N.Technical physics letters, 2020-06, Vol.46 (6), p.543-547 [Periódico revisado por pares]Moscow: Pleiades PublishingTexto completo disponível |
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5 |
Material Type: Artigo
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Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam EpitaxyRatnikov, V. V. ; Nechaev, D. V. ; Myasoedov, A. V. ; Koshelev, O. A. ; Zhmerik, V. N.Technical physics letters, 2020-04, Vol.46 (4), p.389-392 [Periódico revisado por pares]Moscow: Pleiades PublishingTexto completo disponível |
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6 |
Material Type: Artigo
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In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substratesMitsunari, Tadashi ; Tanikawa, Tomoyuki ; Honda, Yoshio ; Yamaguchi, Masahito ; Amano, HiroshiPhysica status solidi. C, 2012-03, Vol.9 (3-4), p.480-483 [Periódico revisado por pares]Berlin: WILEY-VCH VerlagTexto completo disponível |
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7 |
Material Type: Artigo
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Effects of the AlN buffer layer thickness on the properties of ZnO films grown on c-sapphire substrate by pulsed laser depositionXiong, H. ; Dai, J.N. ; Hui, Xiong ; Fang, Y.Y. ; Tian, W. ; Fu, D.X. ; Chen, C.Q. ; Li, Mingkai ; He, YunbinJournal of alloys and compounds, 2013-03, Vol.554, p.104-109 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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8 |
Material Type: Artigo
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Structures and characteristics of delafossite CuCr1−xO2 thin films prepared by pulsed laser depositionSidik, Umar ; Kim, Jung Hee ; Kim, Hae-Kyoung ; Lee, Hee Young ; Lee, Jai-YeoulMicro & nano letters, 2014-12, Vol.9 (12), p.854-857 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
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9 |
Material Type: Artigo
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c面サファイア基板上Ge(111)薄膜成長における双晶形成の抑制宮崎, 滉 ; 大武, 史康 ; 岡田, 健 ; 川島, 知之 ; 鷲尾, 勝由応用物理学会学術講演会講演予稿集, 2019/02/25, pp.3247-3247公益社団法人 応用物理学会Sem texto completo |
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10 |
Material Type: Artigo
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Preventing formation of twins in Ge(111) thin film growth on c-plane sapphire substrateMiyazaki, Ko ; Ohtake, Fumiyasu ; Okada, Takeru ; Kawashima, Tomoyuki ; Washio, KatsuyoshiJSAP Annual Meetings Extended Abstracts, 2019/02/25, pp.3247-3247The Japan Society of Applied PhysicsSem texto completo |