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Radiative Properties of Up-Conversion Coatings Formed on the Basis of Erbium-Doped Barium Titanate Xerogels
Radiative Properties of Up-Conversion Coatings Formed on the Basis of Erbium-Doped Barium Titanate Xerogels
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Radiative Properties of Up-Conversion Coatings Formed on the Basis of Erbium-Doped Barium Titanate Xerogels

Gaponenko, N. V. ; Karnilava, Yu. D. ; Lashkovskaya, E. I. ; Zhivulko, V. D. ; Mudryi, A. V. ; Radyush, Yu. V. ; Andreev, B. A. ; Stepikhova, M. V. ; Yablonskiy, A. N. ; Gusev, S. A. ; Subasri, R. ; Reddy, D. S.

Semiconductors (Woodbury, N.Y.), 2021-09, Vol.55 (9), p.735-740 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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2
Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, a-SiOx:H 〈Er,O〉, by dc-magnetron deposition
Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, a-SiOx:H 〈Er,O〉, by dc-magnetron deposition
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Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, a-SiOx:H 〈Er,O〉, by dc-magnetron deposition

Undalov, Yu. K. ; Terukov, E. I. ; Gusev, O. B. ; Lebedev, V. M. ; Trapeznikova, I. N.

Semiconductors (Woodbury, N.Y.), 2011-12, Vol.45 (12), p.1604-1616 [Periódico revisado por pares]

Dordrecht: SP MAIK Nauka/Interperiodica

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3
Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, a-SiO{sub x}:H Left-Pointing-Angle-Bracket Er,O Right-Pointing-Angle-Bracket , by dc-magnetron deposition
Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, a-SiO{sub x}:H Left-Pointing-Angle-Bracket Er,O Right-Pointing-Angle-Bracket , by dc-magnetron deposition
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Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, a-SiO{sub x}:H Left-Pointing-Angle-Bracket Er,O Right-Pointing-Angle-Bracket , by dc-magnetron deposition

Undalov, Yu. K. ; Terukov, E. I. ; Gusev, O. B. ; Lebedev, V. M. ; Trapeznikova, I. N.

Semiconductors (Woodbury, N.Y.), 2011-12, Vol.45 (12) [Periódico revisado por pares]

United States

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4
Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, a-SiO x :H 〈Er,O〉, by dc-magnetron deposition
Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, a-SiO x :H 〈Er,O〉, by dc-magnetron deposition
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Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, a-SiO x :H 〈Er,O〉, by dc-magnetron deposition

Undalov, Yu. K. ; Terukov, E. I. ; Gusev, O. B. ; Lebedev, V. M. ; Trapeznikova, I. N.

Semiconductors (Woodbury, N.Y.), 2011-12, Vol.45 (12), p.1604-1616 [Periódico revisado por pares]

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5
Effect of electric field in the course of obtaining a-SiO x :H(Er, O) films by dc magnetron sputtering on their composition and photoluminescence intensity of erbium ions
Effect of electric field in the course of obtaining a-SiO x :H(Er, O) films by dc magnetron sputtering on their composition and photoluminescence intensity of erbium ions
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Effect of electric field in the course of obtaining a-SiO x :H(Er, O) films by dc magnetron sputtering on their composition and photoluminescence intensity of erbium ions

Undalov, Yu. K. ; Terukov, E. I. ; Gusev, O. B. ; Lebedev, V. M. ; Trapeznikova, I. N.

Semiconductors (Woodbury, N.Y.), 2008-11, Vol.42 (11), p.1327-1333 [Periódico revisado por pares]

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6
Effect of electric field in the course of obtaining a-SiO{sub x}:H(Er, O) films by dc magnetron sputtering on their composition and photoluminescence intensity of erbium ions
Effect of electric field in the course of obtaining a-SiO{sub x}:H(Er, O) films by dc magnetron sputtering on their composition and photoluminescence intensity of erbium ions
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Effect of electric field in the course of obtaining a-SiO{sub x}:H(Er, O) films by dc magnetron sputtering on their composition and photoluminescence intensity of erbium ions

Undalov, Yu. K. ; Terukov, E. I. ; Gusev, O. B. ; Lebedev, V. M. ; Trapeznikova, I. N.

Semiconductors (Woodbury, N.Y.), 2008-11, Vol.42 (11) [Periódico revisado por pares]

United States

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7
Effect of electric field in the course of obtaining a-SiOx:H(Er, O) films by dc magnetron sputtering on their composition and photoluminescence intensity of erbium ions
Effect of electric field in the course of obtaining a-SiOx:H(Er, O) films by dc magnetron sputtering on their composition and photoluminescence intensity of erbium ions
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Effect of electric field in the course of obtaining a-SiOx:H(Er, O) films by dc magnetron sputtering on their composition and photoluminescence intensity of erbium ions

Undalov, Yu. K. ; Terukov, E. I. ; Gusev, O. B. ; Lebedev, V. M. ; Trapeznikova, I. N.

Semiconductors (Woodbury, N.Y.), 2008, Vol.42 (11), p.1327-1333 [Periódico revisado por pares]

Dordrecht: SP MAIK Nauka/Interperiodica

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8
A Study of the Properties of the Structures with Al Nanoclusters Incorporated into the GaAs Matrix
A Study of the Properties of the Structures with Al Nanoclusters Incorporated into the GaAs Matrix
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A Study of the Properties of the Structures with Al Nanoclusters Incorporated into the GaAs Matrix

Vostokov, N. V.

Semiconductors (Woodbury, N.Y.), 2005, Vol.39 (1), p.82 [Periódico revisado por pares]

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9
Specific features of transmutational doping of {sup 30}Si-enriched silicon crystals with phosphorus: Studies by the method of electron spin resonance
Specific features of transmutational doping of {sup 30}Si-enriched silicon crystals with phosphorus: Studies by the method of electron spin resonance
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Specific features of transmutational doping of {sup 30}Si-enriched silicon crystals with phosphorus: Studies by the method of electron spin resonance

Baranov, P. G. ; Ber, B. Ya ; Godisov, O. N. ; Il'in, I. V. ; Ionov, A. N. ; Kaliteevskii, A. K. ; Kaliteevskii, M. A. ; Lazebnik, I. M. ; Safronov, A. Yu ; Pohl, H.-J. ; Riemann, H. ; Abrosimov, N. V. ; Kop'ev, P. S. ; Bulanov, A. D. ; Gusev, A. V.

Semiconductors (Woodbury, N.Y.), 2006-08, Vol.40 (8) [Periódico revisado por pares]

United States

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10
Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures
Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures
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Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures

Terukov, E. I. ; Gusev, O. B. ; Kon’kov, O. I. ; Undalov, Yu. K. ; Stutzmann, M. ; Janotta, A. ; Mell, H. ; Kleider, J. P.

Semiconductors (Woodbury, N.Y.), 2002-11, Vol.36 (11), p.1240-1243 [Periódico revisado por pares]

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