Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Characterization and Optimization of Inverted-T FinFET Under Nanoscale DimensionsYu, Eunseon ; Heo, Keun ; Cho, SeongjaeIEEE transactions on electron devices, 2018-08, Vol.65 (8), p.3521-3527 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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Device Exploration of NanoSheet Transistors for Sub-7-nm Technology NodeDoyoung Jang ; Yakimets, Dmitry ; Eneman, Geert ; Schuddinck, Pieter ; Bardon, Marie Garcia ; Raghavan, Praveen ; Spessot, Alessio ; Verkest, Diederik ; Mocuta, AndaIEEE transactions on electron devices, 2017-06, Vol.64 (6), p.2707-2713 [Periódico revisado por pares]IEEETexto completo disponível |
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3 |
Material Type: Artigo
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Hybrid Integration of Gate-All-Around Stacked Si Nanosheet FET and Si/SiGe Super-Lattice FinFET to Optimize 6T-SRAM for N3 Node and BeyondZhang, Xuexiang ; Yao, Jiaxin ; Luo, Yanna ; Cao, Lei ; Zheng, Yantong ; Zhang, Qingzhu ; Wu, Zhenhua ; Yin, HuaxiangIEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1776-1783 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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4 |
Material Type: Artigo
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FinFET Evolution Toward Stacked-Nanowire FET for CMOS Technology ScalingPeng Zheng ; Connelly, Daniel ; Fei Ding ; Tsu-Jae King LiuIEEE transactions on electron devices, 2015-12, Vol.62 (12), p.3945-3950 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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5 |
Material Type: Artigo
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Simulation-Based Study of High-Permittivity Inserted-Oxide FinFET With Low-Permittivity Inner SpacersWu, Yi-Ting ; Chiang, Meng-Hsueh ; Chen, Jone F. ; Liu, Tsu-Jae KingIEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5529-5534 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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6 |
Material Type: Artigo
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DC response, low-frequency noise, and TID-induced mechanisms in 16-nm FinFETs for high-energy physics experimentsBonaldo, Stefano ; Ma, Teng ; Mattiazzo, Serena ; Baschirotto, Andrea ; Enz, Christian ; Fleetwood, Daniel M. ; Paccagnella, Alessandro ; Gerardin, SimoneNuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2022-06, Vol.1033, p.166727, Article 166727 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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(Ultra)Wide-Bandgap Vertical Power FinFETsZhang, Yuhao ; Palacios, TomasIEEE transactions on electron devices, 2020-10, Vol.67 (10), p.3960-3971 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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8 |
Material Type: Artigo
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Challenges and Limitations of CMOS Scaling for FinFET and Beyond ArchitecturesRazavieh, Ali ; Zeitzoff, Peter ; Nowak, Edward J.IEEE transactions on nanotechnology, 2019, Vol.18, p.999-1004 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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9 |
Material Type: Artigo
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14-nm FinFET Technology for Analog and RF ApplicationsSingh, Jagar ; Ciavatti, J. ; Sundaram, K. ; Wong, J. S. ; Bandyopadhyay, A. ; Zhang, X. ; Li, S. ; Bellaouar, A. ; Watts, J. ; Lee, J. G. ; Samavedam, S. B.IEEE transactions on electron devices, 2018-01, Vol.65 (1), p.31-37 [Periódico revisado por pares]IEEETexto completo disponível |
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10 |
Material Type: Artigo
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Design Insights of Nanosheet FET and CMOS Circuit Applications at 5-nm Technology NodeSreenivasulu, V. Bharath ; Narendar, VadthiyaIEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4115-4122 [Periódico revisado por pares]New York: IEEETexto completo disponível |