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Combined (Si) and (Ge) FinFET-CMOS Inverter Characterization Based on Driver to Load Transistor Ratio
Combined (Si) and (Ge) FinFET-CMOS Inverter Characterization Based on Driver to Load Transistor Ratio
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Combined (Si) and (Ge) FinFET-CMOS Inverter Characterization Based on Driver to Load Transistor Ratio

Hashim, Yasir ; Hussein, Safwan Mawlood

Journal of Nano- and Electronic Physics, 2022, Vol.14 (5), p.5003-5003-6 [Periódico revisado por pares]

Sumy Ukraine: Sumy State University, Journal of Nano - and Electronic Physics

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2
High Temperature Effects on the Static Performance of 14 nm TG SOI N FinFET
High Temperature Effects on the Static Performance of 14 nm TG SOI N FinFET
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High Temperature Effects on the Static Performance of 14 nm TG SOI N FinFET

Lazzaz, A. ; Bousbahi, K. ; Ghamnia, M.

Journal of Nano- and Electronic Physics, 2023, Vol.15 (2), p.2005-2005-5 [Periódico revisado por pares]

Sumy Ukraine: Sumy State University, Journal of Nano - and Electronic Physics

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3
Temperature Impact on the Characteristics of N-Channel GaP Fin Field Effect Transistor (GaP-FinFET)
Temperature Impact on the Characteristics of N-Channel GaP Fin Field Effect Transistor (GaP-FinFET)
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Temperature Impact on the Characteristics of N-Channel GaP Fin Field Effect Transistor (GaP-FinFET)

Hashim, Y

Journal of Nano- and Electronic Physics, 2024-01, Vol.16 (1) [Periódico revisado por pares]

Sumy Ukraine: Sumy State University, Journal of Nano - and Electronic Physics

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4
Improvement Analysis of Leakage Currents with Stacked High-k/Metal Gate in 10 nm Strained Channel HOI FinFET
Improvement Analysis of Leakage Currents with Stacked High-k/Metal Gate in 10 nm Strained Channel HOI FinFET
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Improvement Analysis of Leakage Currents with Stacked High-k/Metal Gate in 10 nm Strained Channel HOI FinFET

Kumari, Payal ; Nanda, Swagat ; Saha, Priyanka ; Dhar, Rudra Sankar

Journal of Nano- and Electronic Physics, 2022, Vol.14 (2), p.2004-2004-4 [Periódico revisado por pares]

Sumy Ukraine: Sumy State University, Journal of Nano - and Electronic Physics

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5
Power and Threshold Voltage Analysis of 14 nm FinFET 12T SRAM Cell for Low Power Applications
Power and Threshold Voltage Analysis of 14 nm FinFET 12T SRAM Cell for Low Power Applications
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Power and Threshold Voltage Analysis of 14 nm FinFET 12T SRAM Cell for Low Power Applications

Parthasarathi, P. ; Arun Samuel, T. S. ; Vimala, P. ; Arumugam, N.

Journal of Nano- and Electronic Physics, 2022, Vol.14 (5), p.5008-5008-6 [Periódico revisado por pares]

Sumy Ukraine: Sumy State University, Journal of Nano - and Electronic Physics

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6
Si- and Ge-FinFET Inverter Circuits Optimization Based on Driver to Load Transistor Fin Ratio
Si- and Ge-FinFET Inverter Circuits Optimization Based on Driver to Load Transistor Fin Ratio
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Si- and Ge-FinFET Inverter Circuits Optimization Based on Driver to Load Transistor Fin Ratio

Hashim, Yasir ; Hussein, Safwan Mawlood

Journal of Nano- and Electronic Physics, 2021, Vol.13 (6), p.6011-6011-4 [Periódico revisado por pares]

Sumy Ukraine: Sumy State University, Journal of Nano - and Electronic Physics

Sem texto completo

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7
Impact of the High-K Dielectric Material as Spacer on Analog and ?RF Performance of the GS-DG-FinFET
Impact of the High-K Dielectric Material as Spacer on Analog and ?RF Performance of the GS-DG-FinFET
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Impact of the High-K Dielectric Material as Spacer on Analog and ?RF Performance of the GS-DG-FinFET

A Pattnaik? ; Singh, Sruti S ; Mohapatra, S K

Journal of Nano- and Electronic Physics, 2019-01, Vol.11 (6) [Periódico revisado por pares]

Sumy Ukraine: Sumy State University, Journal of Nano - and Electronic Physics

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8
Numerical Simulation of FinFET Transistors Parameters
Numerical Simulation of FinFET Transistors Parameters
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Numerical Simulation of FinFET Transistors Parameters

Buryk, І. P. ; Golovnia, A. O. ; Ivashchenko, M. M. ; Odnodvorets, L. V.

Journal of Nano- and Electronic Physics, 2020, Vol.12 (3), p.3005-3005-4 [Periódico revisado por pares]

Sumy Ukraine: Sumy State University, Journal of Nano - and Electronic Physics

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9
Impact of High-k Dielectric Materials on Short Channel Effects in Tri-gate SOI FinFETs
Impact of High-k Dielectric Materials on Short Channel Effects in Tri-gate SOI FinFETs
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Impact of High-k Dielectric Materials on Short Channel Effects in Tri-gate SOI FinFETs

Renthlei, Zohmingmawia ; Nanda, Swagat ; Sankar Dhar, Rudra

Journal of Nano- and Electronic Physics, 2021, Vol.13 (5), p.5013-5013-6 [Periódico revisado por pares]

Sumy Ukraine: Sumy State University, Journal of Nano - and Electronic Physics

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10
Simulation and Performance Analysis of 32 nm FinFet based 4-Bit Carry Look Adder
Simulation and Performance Analysis of 32 nm FinFet based 4-Bit Carry Look Adder
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Simulation and Performance Analysis of 32 nm FinFet based 4-Bit Carry Look Adder

Rashid, S. ; Khan, S. ; Singh, A.

Journal of Nano- and Electronic Physics, 2017, Vol.9 (5), p.5003-5003-4 [Periódico revisado por pares]

Sumy Ukraine: Sumy State University, Journal of Nano - and Electronic Physics

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