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Analytical Modeling for a Novel Triple RESURF LDMOS With N-Top Layer
Analytical Modeling for a Novel Triple RESURF LDMOS With N-Top Layer
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Analytical Modeling for a Novel Triple RESURF LDMOS With N-Top Layer

Qiao, Ming ; Wang, Yuru ; Zhou, Xin ; Jin, Feng ; Wang, Huihui ; Wang, Zhuo ; Li, Zhaoji ; Zhang, Bo

IEEE transactions on electron devices, 2015-09, Vol.62 (9), p.2933-2939 [Periódico revisado por pares]

IEEE

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2
Study on the C OSS Dynamic Loss of Superjunction MOSFETs in Quasi-Resonant Flyback Converters
Study on the C OSS Dynamic Loss of Superjunction MOSFETs in Quasi-Resonant Flyback Converters
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Study on the C OSS Dynamic Loss of Superjunction MOSFETs in Quasi-Resonant Flyback Converters

Zeng, Wei ; Li, Ping ; Lin, Zhi ; Wang, Da ; Guo, Jingwei ; Jiang, Jie ; Hu, Shengdong

IEEE transactions on electron devices, 2023-08, Vol.70 (8), p.4303-4308 [Periódico revisado por pares]

New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)

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3
2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure
2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure
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2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure

Kumar, Sanjay ; Goel, Ekta ; Singh, Kunal ; Singh, Balraj ; Singh, Prince Kumar ; Baral, Kamalaksha ; Jit, Satyabrata

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.960-968 [Periódico revisado por pares]

New York: IEEE

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4
Demonstration of Threshold Switching in Undoped SiO x Layer for Oscillation Neurons
Demonstration of Threshold Switching in Undoped SiO x Layer for Oscillation Neurons
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Demonstration of Threshold Switching in Undoped SiO x Layer for Oscillation Neurons

Hong, Eunryeong ; Kim, Hyun Wook ; Choi, Hyeonsik ; Jeon, Seonuk ; Kim, Nayeon ; Woo, Jiyong

IEEE transactions on electron devices, 2024-01, Vol.71 (3), p.2228 [Periódico revisado por pares]

New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)

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5
1.2 kV) AlGaN/GaN Monolithic Bidirectional HEMTs With Low On-Resistance (2.54 mΩ ⋅ cm2
1.2 kV) AlGaN/GaN Monolithic Bidirectional HEMTs With Low On-Resistance (2.54 mΩ ⋅ cm2
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1.2 kV) AlGaN/GaN Monolithic Bidirectional HEMTs With Low On-Resistance (2.54 mΩ ⋅ cm2

Alam, Md Tahmidul ; Chen, Jiahao ; Bai, Ruixin ; Pasayat, Shubhra S ; Gupta, Chirag

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.733 [Periódico revisado por pares]

New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)

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6
Novel Drain-Connected Field Plate GaN HEMT Designs for Improved V BD – R ON Tradeoff and RF PA Performance
Novel Drain-Connected Field Plate GaN HEMT Designs for Improved V BD – R ON Tradeoff and RF PA Performance
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Novel Drain-Connected Field Plate GaN HEMT Designs for Improved V BD – R ON Tradeoff and RF PA Performance

Soni, Ankit ; Ajay ; Shrivastava, Mayank

IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1718-1725 [Periódico revisado por pares]

New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)

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7
A Compact 2-D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors With a SiO2/High- k Stacked Gate-Oxide Structure
A Compact 2-D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors With a SiO2/High- k Stacked Gate-Oxide Structure
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A Compact 2-D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors With a SiO2/High- k Stacked Gate-Oxide Structure

Kumar, Sanjay ; Goel, Ekta ; Singh, Kunal ; Singh, Balraj ; Kumar, Mirgender ; Jit, Satyabrata

IEEE transactions on electron devices, 2016-08, Vol.63 (8), p.3291-3299 [Periódico revisado por pares]

IEEE

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8
Gamma Ray on Superjunction MOSFET and Gate Ringing
Gamma Ray on Superjunction MOSFET and Gate Ringing
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Gamma Ray on Superjunction MOSFET and Gate Ringing

Song, Sangyun ; Kim, Dong-seok ; Kang, Hyemin

IEEE transactions on electron devices, 2024-05, p.1-7 [Periódico revisado por pares]

IEEE

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9
Low Turn-On Voltage and High Breakdown Voltage β-Ga2O3 Diode With Fin Channel and Ohmic Contact Anode
Low Turn-On Voltage and High Breakdown Voltage β-Ga2O3 Diode With Fin Channel and Ohmic Contact Anode
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Low Turn-On Voltage and High Breakdown Voltage β-Ga2O3 Diode With Fin Channel and Ohmic Contact Anode

Wei, Yuxi ; Lu, Juan ; Jiang, Zhuolin ; Yang, Kemeng ; Wei, Jie ; Linyao Hao ; Peng, Xiaosong ; Luo, Xiaorong

IEEE transactions on electron devices, 2023-01, Vol.70 (1), p.196 [Periódico revisado por pares]

New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)

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10
Artificial Neural Network-Based Compact Modeling Methodology for Advanced Transistors
Artificial Neural Network-Based Compact Modeling Methodology for Advanced Transistors
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Artificial Neural Network-Based Compact Modeling Methodology for Advanced Transistors

Wang, Jing ; Kim, Yo-Han ; Ryu, Jisu ; Jeong, Changwook ; Choi, Woosung ; Kim, Daesin

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1318-1325 [Periódico revisado por pares]

New York: IEEE

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