Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
Hybrid Integration of Gate-All-Around Stacked Si Nanosheet FET and Si/SiGe Super-Lattice FinFET to Optimize 6T-SRAM for N3 Node and BeyondZhang, Xuexiang ; Yao, Jiaxin ; Luo, Yanna ; Cao, Lei ; Zheng, Yantong ; Zhang, Qingzhu ; Wu, Zhenhua ; Yin, HuaxiangIEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1776-1783 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
2 |
Material Type: Artigo
|
14-nm FinFET Technology for Analog and RF ApplicationsSingh, Jagar ; Ciavatti, J. ; Sundaram, K. ; Wong, J. S. ; Bandyopadhyay, A. ; Zhang, X. ; Li, S. ; Bellaouar, A. ; Watts, J. ; Lee, J. G. ; Samavedam, S. B.IEEE transactions on electron devices, 2018-01, Vol.65 (1), p.31-37 [Periódico revisado por pares]IEEETexto completo disponível |
|
3 |
Material Type: Artigo
|
Exploration of Negative Capacitance in Gate-All-Around Si Nanosheet TransistorsSakib, Fahimul Islam ; Hasan, Md. Azizul ; Hossain, MainulIEEE transactions on electron devices, 2020-11, Vol.67 (11), p.5236-5242 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
4 |
Material Type: Artigo
|
Comparison of Gate-Metal Work Function Variability Between Ge and Si p-Channel FinFETsNawaz, Sk Masum ; Dutta, Souvik ; Mallik, AbhijitIEEE transactions on electron devices, 2015-12, Vol.62 (12), p.3951-3956 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
5 |
Material Type: Artigo
|
Performance Investigation of Novel Pt/Pd-SiO2 Junctionless FinFET as a High Sensitive Hydrogen Gas Sensor for Industrial ApplicationsSehgal, Himani Dua ; Pratap, Yogesh ; Gupta, Mridula ; Kabra, SnehaIEEE sensors journal, 2021-06, Vol.21 (12), p.13356-13363 [Periódico revisado por pares]IEEETexto completo disponível |
|
6 |
Material Type: Artigo
|
Impact of Sub- \mu m Wafer Thinning on Latch-Up Risk in DTCO/STCO Scaling EraSerbulova, Kateryna ; Chen, Shih-Hung ; Hellings, Geert ; Veloso, Anabela ; Jourdain, Anne ; Boeck, Jo De ; Groeseneken, GuidoIEEE transactions on electron devices, 2024-04, p.1-6 [Periódico revisado por pares]IEEETexto completo disponível |
|
7 |
Material Type: Artigo
|
Highly Scaled GaN Complementary Technology on a Silicon SubstrateXie, Qingyun ; Yuan, Mengyang ; Niroula, John ; Sikder, Bejoy ; Greer, James A. ; Rajput, Nitul S. ; Chowdhury, Nadim ; Palacios, TomasIEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1-8 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
8 |
Material Type: Artigo
|
Monte Carlo Comparison of n-Type and p-Type Nanosheets With FinFETs: Effect of the Number of SheetsBufler, F. M. ; Jang, D. ; Hellings, G. ; Eneman, G. ; Matagne, P. ; Spessot, A. ; Na, M. H.IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4701-4704 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
9 |
Material Type: Artigo
|
Suppression of Statistical Variability in Junctionless FinFET Using Accumulation-Mode and Charge Plasma StructureHu, Luodan ; Lou, Haijun ; Li, Wentao ; Chang, Kuan-Chang ; Lin, XinnanIEEE transactions on electron devices, 2021-01, Vol.68 (1), p.399-404 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
10 |
Material Type: Artigo
|
Improved SOI FinFETs Performance With Low-Temperature Deuterium AnnealingKu, Ja-Yun ; Yu, Ji-Man ; Wang, Dong-Hyun ; Jung, Dae-Han ; Han, Joon-Kyu ; Choi, Yang-Kyu ; Park, Jun-YoungIEEE transactions on electron devices, 2023-07, Vol.70 (7), p.3958-3962 [Periódico revisado por pares]New York: IEEETexto completo disponível |