Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
A Transcutaneous Optical Telemetry System for a Totally Implantable Artificial Heart: Reduction of Power Consumption of the SystemInoue, K ; Shiba, K ; Koshiji, K ; Tsuchimoto, K ; Tsukahara, K ; Masuzawa, T ; Tatsumi, E ; Taenaka, Y ; Takano, HJinko Zoki, 1999/04/15, Vol.28(2), pp.369-376JAPANESE SOCIETY FOR ARTIFICIAL ORGANSTexto completo disponível |
|
2 |
Material Type: Artigo
|
Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditionsLefebvre, S. ; Khatir, Z. ; Saint-Eve, F.IEEE transactions on electron devices, 2005-02, Vol.52 (2), p.276-283 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
|
3 |
Material Type: Artigo
|
On the specific on-resistance of high-voltage and power devicesZingg, R.P.IEEE transactions on electron devices, 2004-03, Vol.51 (3), p.492-499 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
4 |
Material Type: Artigo
|
The plasma extraction transit-time oscillation in bipolar power Devices-Mechanism,EMC effects, and preventionSiemieniec, R. ; Mourick, P. ; Netzel, M. ; Lutz, J.IEEE transactions on electron devices, 2006-02, Vol.53 (2), p.369-379 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
|
5 |
Material Type: Artigo
|
Effects of self-heating on the microwave performance of SiGe HBTsSampathkumaran, R. ; Roenker, K.P.Solid-state electronics, 2005-08, Vol.49 (8), p.1292-1296 [Periódico revisado por pares]Oxford: Elsevier LtdTexto completo disponível |
|
6 |
Material Type: Artigo
|
A new lateral trench-gate conductivity modulated power transistorCai, J. ; Sin, J.K.O. ; Mok, P.K.T. ; Wai-Tung Ng ; Lai, P.P.T.IEEE transactions on electron devices, 1999-08, Vol.46 (8), p.1788-1793 [Periódico revisado por pares]IEEETexto completo disponível |
|
7 |
Material Type: Ata de Congresso
|
1200V class reverse blocking IGBT (RB-IGBT) for AC matrix converterTAKAHASHI, Hideki ; KANEDA, Mitsuru ; MINATO, Tadaharu2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs, 2004, p.121-124Tokyo: IEEETexto completo disponível |