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Refinado por: idioma: Japonês remover
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1
A Transcutaneous Optical Telemetry System for a Totally Implantable Artificial Heart: Reduction of Power Consumption of the System
Material Type:
Artigo
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A Transcutaneous Optical Telemetry System for a Totally Implantable Artificial Heart: Reduction of Power Consumption of the System

Inoue, K ; Shiba, K ; Koshiji, K ; Tsuchimoto, K ; Tsukahara, K ; Masuzawa, T ; Tatsumi, E ; Taenaka, Y ; Takano, H

Jinko Zoki, 1999/04/15, Vol.28(2), pp.369-376

JAPANESE SOCIETY FOR ARTIFICIAL ORGANS

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2
Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions
Material Type:
Artigo
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Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions

Lefebvre, S. ; Khatir, Z. ; Saint-Eve, F.

IEEE transactions on electron devices, 2005-02, Vol.52 (2), p.276-283 [Periódico revisado por pares]

New York, NY: IEEE

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3
On the specific on-resistance of high-voltage and power devices
Material Type:
Artigo
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On the specific on-resistance of high-voltage and power devices

Zingg, R.P.

IEEE transactions on electron devices, 2004-03, Vol.51 (3), p.492-499 [Periódico revisado por pares]

New York: IEEE

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4
The plasma extraction transit-time oscillation in bipolar power Devices-Mechanism,EMC effects, and prevention
Material Type:
Artigo
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The plasma extraction transit-time oscillation in bipolar power Devices-Mechanism,EMC effects, and prevention

Siemieniec, R. ; Mourick, P. ; Netzel, M. ; Lutz, J.

IEEE transactions on electron devices, 2006-02, Vol.53 (2), p.369-379 [Periódico revisado por pares]

New York, NY: IEEE

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5
Effects of self-heating on the microwave performance of SiGe HBTs
Material Type:
Artigo
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Effects of self-heating on the microwave performance of SiGe HBTs

Sampathkumaran, R. ; Roenker, K.P.

Solid-state electronics, 2005-08, Vol.49 (8), p.1292-1296 [Periódico revisado por pares]

Oxford: Elsevier Ltd

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6
A new lateral trench-gate conductivity modulated power transistor
Material Type:
Artigo
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A new lateral trench-gate conductivity modulated power transistor

Cai, J. ; Sin, J.K.O. ; Mok, P.K.T. ; Wai-Tung Ng ; Lai, P.P.T.

IEEE transactions on electron devices, 1999-08, Vol.46 (8), p.1788-1793 [Periódico revisado por pares]

IEEE

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7
1200V class reverse blocking IGBT (RB-IGBT) for AC matrix converter
Material Type:
Ata de Congresso
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1200V class reverse blocking IGBT (RB-IGBT) for AC matrix converter

TAKAHASHI, Hideki ; KANEDA, Mitsuru ; MINATO, Tadaharu

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs, 2004, p.121-124

Tokyo: IEEE

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  1. Revistas revisadas por pares (5)

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