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Refinado por: Base de dados/Biblioteca: Science Citation Index Expanded (Web of Science) remover assunto: Applied Sciences remover
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1
Low-Temperature Processed Electron Collection Layers of Graphene/TiO2 Nanocomposites in Thin Film Perovskite Solar Cells
Low-Temperature Processed Electron Collection Layers of Graphene/TiO2 Nanocomposites in Thin Film Perovskite Solar Cells
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Low-Temperature Processed Electron Collection Layers of Graphene/TiO2 Nanocomposites in Thin Film Perovskite Solar Cells

Wang, Jacob Tse-Wei ; Ball, James M ; Barea, Eva M ; Abate, Antonio ; Alexander-Webber, Jack A ; Huang, Jian ; Saliba, Michael ; Mora-Sero, Iván ; Bisquert, Juan ; Snaith, Henry J ; Nicholas, Robin J

Nano letters, 2014-02, Vol.14 (2), p.724-730 [Periódico revisado por pares]

Washington, DC: American Chemical Society

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2
Effect of temperature and electron irradiation on the I– V characteristics of Au/CdTe Schottky diodes
Effect of temperature and electron irradiation on the I– V characteristics of Au/CdTe Schottky diodes
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Effect of temperature and electron irradiation on the I– V characteristics of Au/CdTe Schottky diodes

Pattabi, Manjunatha ; Krishnan, Sheeja ; Ganesh ; Mathew, X.

Solar energy, 2007, Vol.81 (1), p.111-116 [Periódico revisado por pares]

Oxford: Elsevier Ltd

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3
Exchange with temperature of the electron-vibrational mode interaction between thienylene-phenylene copolymer rings
Exchange with temperature of the electron-vibrational mode interaction between thienylene-phenylene copolymer rings
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Exchange with temperature of the electron-vibrational mode interaction between thienylene-phenylene copolymer rings

Silva, R.A ; Cury, L.A ; Guimarães, P.S.S ; Marletta, Alexandre ; Serein-Spirau, F ; Bouachrine, M ; Moreau, J.J.E ; Lère-Porte, J.-P

Journal of polymer science. Part B, Polymer physics, 2010-05, Vol.48 (9), p.964-971 [Periódico revisado por pares]

Hoboken: Wiley Subscription Services, Inc., A Wiley Company

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4
Elevated temperature characterization of electron beam freeform fabricated Ti–6Al–4V and dispersion strengthened Ti–8Al–1Er
Elevated temperature characterization of electron beam freeform fabricated Ti–6Al–4V and dispersion strengthened Ti–8Al–1Er
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Elevated temperature characterization of electron beam freeform fabricated Ti–6Al–4V and dispersion strengthened Ti–8Al–1Er

Bush, R.W. ; Brice, C.A.

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2012-09, Vol.554, p.12-21 [Periódico revisado por pares]

Kidlington: Elsevier B.V

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5
Effect of ambient-temperature and high-temperature electron-beam radiation on the structural, thermal, mechanical, and dynamic mechanical properties of injection-molded polyamide-6,6
Effect of ambient-temperature and high-temperature electron-beam radiation on the structural, thermal, mechanical, and dynamic mechanical properties of injection-molded polyamide-6,6
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Effect of ambient-temperature and high-temperature electron-beam radiation on the structural, thermal, mechanical, and dynamic mechanical properties of injection-molded polyamide-6,6

Sengupta, Rajatendu ; Sabharwal, S. ; Tikku, V. K. ; Somani, Alok K. ; Chaki, Tapan K. ; Bhowmick, Anil K.

Journal of applied polymer science, 2006-02, Vol.99 (4), p.1633-1644 [Periódico revisado por pares]

Hoboken: Wiley Subscription Services, Inc., A Wiley Company

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6
Effect of electron–electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs
Effect of electron–electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs
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Effect of electron–electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs

Lee, Seonhaeng ; Kim, Dongwoo ; Kim, Cheolgyu ; Lee, N.-H. ; Kim, G.-J. ; Lee, Chiho ; Park, Jeongsoo ; Kang, Bongkoo

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.1905-1908 [Periódico revisado por pares]

Kidlington: Elsevier Ltd

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7
Electron emission from CVD diamond p– i– n junctions with negative electron affinity during room temperature operation
Electron emission from CVD diamond p– i– n junctions with negative electron affinity during room temperature operation
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Electron emission from CVD diamond p– i– n junctions with negative electron affinity during room temperature operation

Takeuchi, D. ; Makino, T. ; Kato, H. ; Ogura, M. ; Tokuda, N. ; Oyama, K. ; Matsumoto, T. ; Okushi, H. ; Yamasaki, S.

Diamond and related materials, 2011-07, Vol.20 (7), p.917-921 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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8
Electrical properties of MIS capacitor using low temperature electron beam gun—evaporated HfAlO dielectrics
Electrical properties of MIS capacitor using low temperature electron beam gun—evaporated HfAlO dielectrics
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Electrical properties of MIS capacitor using low temperature electron beam gun—evaporated HfAlO dielectrics

Mikhelashvili, V. ; Meyler, B. ; Shneider, J. ; Kreinin, O. ; Eisenstein, G.

Microelectronics and reliability, 2005-05, Vol.45 (5), p.933-936 [Periódico revisado por pares]

Oxford: Elsevier Ltd

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9
Electron number and electron temperature evolution in the initial discharge phase of a shadow mask plasma display panel
Electron number and electron temperature evolution in the initial discharge phase of a shadow mask plasma display panel
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Electron number and electron temperature evolution in the initial discharge phase of a shadow mask plasma display panel

Zhang, Panpan ; Tu, Yan ; Tolner, Harm ; Yang, Lanlan

Thin solid films, 2012-10, Vol.521, p.34-37 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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10
The Growth of Thin Silicon Oxide and Silicon Nitride Films at Low Temperature (400 ^} ) and High Growth Rates for Semiconductor Device Fabrication by an Advanced Low Electron Temperature Microwave-Excited High-Density Plasma System
The Growth of Thin Silicon Oxide and Silicon Nitride Films at Low Temperature (400 ^} ) and High Growth Rates for Semiconductor Device Fabrication by an Advanced Low Electron Temperature Microwave-Excited High-Density Plasma System
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The Growth of Thin Silicon Oxide and Silicon Nitride Films at Low Temperature (400 ^} ) and High Growth Rates for Semiconductor Device Fabrication by an Advanced Low Electron Temperature Microwave-Excited High-Density Plasma System

Saito, Yuji ; Sekine, Katsuyuki ; Kaihara, Ryu ; Hirayama, Masaki ; Sugawa, Shigetoshi ; Aharoni, Herzl ; Ohmi, Tadahiro

IEEE transactions on semiconductor manufacturing, 2010-05, Vol.23 (2), p.328-339 [Periódico revisado por pares]

New York, NY: IEEE

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