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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
Material Type: Artigo
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A Survey of Software Techniques for Using Non-Volatile Memories for Storage and Main Memory SystemsMittal, Sparsh ; Vetter, Jeffrey S.IEEE transactions on parallel and distributed systems, 2016-05, Vol.27 (5), p.1537-1550 [Periódico revisado por pares]New York: IEEETexto completo disponível |
| 2 |
Material Type: Artigo
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Metal-Oxide RRAMWong, H.-S. Philip ; Lee, Heng-Yuan ; Yu, Shimeng ; Chen, Yu-Sheng ; Wu, Yi ; Chen, Pang-Shiu ; Lee, Byoungil ; Chen, Frederick T. ; Tsai, Ming-JinnProceedings of the IEEE, 2012-06, Vol.100 (6), p.1951-1970 [Periódico revisado por pares]IEEETexto completo disponível |
| 3 |
Material Type: Artigo
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Near Volatile and Non-Volatile Memory Processing in 3D SystemsHosseini, Maryam S. ; Ebrahimi, Masoumeh ; Yaghini, Pooria ; Bagherzadeh, NaderIEEE transactions on emerging topics in computing, 2022-07, Vol.10 (3), p.1657-1664 [Periódico revisado por pares]New York: IEEETexto completo disponível |
| 4 |
Material Type: Artigo
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Radiation Effects in Advanced and Emerging Nonvolatile MemoriesMarinella, Matthew J.IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.546-572 [Periódico revisado por pares]New York: IEEETexto completo disponível |
| 5 |
Material Type: Artigo
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Platform Storage Performance With 3D XPoint TechnologyHady, Frank T. ; Foong, Annie ; Veal, Bryan ; Williams, DanProceedings of the IEEE, 2017-09, Vol.105 (9), p.1822-1833 [Periódico revisado por pares]New York: IEEETexto completo disponível |
| 6 |
Material Type: Artigo
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NVSim: A Circuit-Level Performance, Energy, and Area Model for Emerging Nonvolatile MemoryXiangyu Dong ; Cong Xu ; Yuan Xie ; Jouppi, N. P.IEEE transactions on computer-aided design of integrated circuits and systems, 2012-07, Vol.31 (7), p.994-1007 [Periódico revisado por pares]New York: IEEETexto completo disponível |
| 7 |
Material Type: Artigo
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In-Memory Computing With Double Word Lines and Three Read Ports for Four OperandsLin, Zhiting ; Zhan, Honglan ; Li, Xuan ; Peng, Chunyu ; Lu, Wenjuan ; Wu, Xiulong ; Chen, JunningIEEE transactions on very large scale integration (VLSI) systems, 2020-05, Vol.28 (5), p.1316-1320 [Periódico revisado por pares]New York: IEEETexto completo disponível |
| 8 |
Material Type: Artigo
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An Overview of Computing-in-Memory Circuits With DRAM and NVMKim, Sangjin ; Yoo, Hoi-JunIEEE transactions on circuits and systems. II, Express briefs, 2024-03, Vol.71 (3), p.1-1 [Periódico revisado por pares]New York: IEEETexto completo disponível |
| 9 |
Material Type: Artigo
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Resistive Random Access Memory for Future Information Processing SystemWu, Huaqiang ; Wang, Xiao Hu ; Gao, Bin ; Deng, Ning ; Lu, Zhichao ; Haukness, Brent ; Bronner, Gary ; Qian, HeProceedings of the IEEE, 2017-09, Vol.105 (9), p.1770-1789 [Periódico revisado por pares]New York: IEEETexto completo disponível |
| 10 |
Material Type: Artigo
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SAPIENS: A 64-kb RRAM-Based Non-Volatile Associative Memory for One-Shot Learning and Inference at the EdgeLi, Haitong ; Chen, Wei-Chen ; Levy, Akash ; Wang, Ching-Hua ; Wang, Hongjie ; Chen, Po-Han ; Wan, Weier ; Khwa, Win-San ; Chuang, Harry ; Chih, Y.-D. ; Chang, Meng-Fan ; Wong, H.-S. Philip ; Raina, PriyankaIEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6637-6643 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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