Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Data Allocation Optimization for Hybrid Scratch Pad Memory With SRAM and Nonvolatile MemoryJingtong Hu ; Xue, C. J. ; Qingfeng Zhuge ; Wei-Che Tseng ; Sha, E. H.IEEE transactions on very large scale integration (VLSI) systems, 2013-06, Vol.21 (6), p.1094-1102 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
2 |
Material Type: Artigo
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A 1 Mb Nonvolatile Embedded Memory Using 4T2MTJ Cell With 32 b Fine-Grained Power Gating SchemeOhsawa, Takashi ; Koike, Hiroki ; Miura, Sadahiko ; Honjo, Hiroaki ; Kinoshita, Keizo ; Ikeda, Shoji ; Hanyu, Takahiro ; Ohno, Hideo ; Endoh, TetsuoIEEE journal of solid-state circuits, 2013-06, Vol.48 (6), p.1511-1520 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
3 |
Material Type: Artigo
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Memristor MOS Content Addressable Memory (MCAM): Hybrid Architecture for Future High Performance Search EnginesEshraghian, Kamran ; Kyoung-Rok Cho ; Kavehei, Omid ; Soon-Ku Kang ; Abbott, Derek ; Sung-Mo Steve KangIEEE transactions on very large scale integration (VLSI) systems, 2011-08, Vol.19 (8), p.1407-1417 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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Material Type: Artigo
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Design of Spin-Torque Transfer Magnetoresistive RAM and CAM/TCAM with High Sensing and Search SpeedXu, Wei ; Zhang, Tong ; Chen, YiranIEEE transactions on very large scale integration (VLSI) systems, 2010-01, Vol.18 (1), p.66-74 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
5 |
Material Type: Artigo
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Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM-Part II: ModelingLarentis, Stefano ; Nardi, Federico ; Balatti, Simone ; Gilmer, David C. ; Ielmini, DanieleIEEE transactions on electron devices, 2012-09, Vol.59 (9), p.2468-2475 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
6 |
Material Type: Artigo
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A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and `1'/`0' Dual-Array Equalized Reference SchemeTakemura, R. ; Kawahara, T. ; Miura, K. ; Yamamoto, H. ; Hayakawa, J. ; Matsuzaki, N. ; Ono, K. ; Yamanouchi, M. ; Ito, K. ; Takahashi, H. ; Ikeda, S. ; Hasegawa, H. ; Matsuoka, H. ; Ohno, H.IEEE journal of solid-state circuits, 2010-04, Vol.45 (4), p.869-879 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
7 |
Material Type: Artigo
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Cross-Point Memory Array Without Cell Selectors-Device Characteristics and Data Storage Pattern DependenciesLiang, Jiale ; Wong, H.-S PhilipIEEE transactions on electron devices, 2010-10, Vol.57 (10), p.2531-2538 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
8 |
Material Type: Artigo
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2 Mb SPRAM (SPin-Transfer Torque RAM) With Bit-by-Bit Bi-Directional Current Write and Parallelizing-Direction Current ReadKawahara, T. ; Takemura, R. ; Miura, K. ; Hayakawa, J. ; Ikeda, S. ; Young Min Lee ; Sasaki, R. ; Goto, Y. ; Ito, K. ; Meguro, T. ; Matsukura, F. ; Takahashi, H. ; Matsuoka, H. ; Ohno, H.IEEE journal of solid-state circuits, 2008-01, Vol.43 (1), p.109-120 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
9 |
Material Type: Artigo
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Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAMIelmini, D. ; Nardi, F. ; Cagli, C.IEEE transactions on electron devices, 2011-10, Vol.58 (10), p.3246-3253 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
10 |
Material Type: Artigo
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Flash memory cells-an overviewPavan, P. ; Bez, R. ; Olivo, P. ; Zanoni, E.Proceedings of the IEEE, 1997-08, Vol.85 (8), p.1248-1271 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |