Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
Radiation Effects in Advanced and Emerging Nonvolatile MemoriesMarinella, Matthew J.IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.546-572 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
2 |
Material Type: Artigo
|
In-Memory Processing Paradigm for Bitwise Logic Operations in STT-MRAMKang, Wang ; Wang, Haotian ; Wang, Zhaohao ; Zhang, Youguang ; Zhao, WeishengIEEE transactions on magnetics, 2017-11, Vol.53 (11), p.1-4New York: IEEETexto completo disponível |
|
3 |
Material Type: Artigo
|
SAPIENS: A 64-kb RRAM-Based Non-Volatile Associative Memory for One-Shot Learning and Inference at the EdgeLi, Haitong ; Chen, Wei-Chen ; Levy, Akash ; Wang, Ching-Hua ; Wang, Hongjie ; Chen, Po-Han ; Wan, Weier ; Khwa, Win-San ; Chuang, Harry ; Chih, Y.-D. ; Chang, Meng-Fan ; Wong, H.-S. Philip ; Raina, PriyankaIEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6637-6643 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
4 |
Material Type: Artigo
|
Hybrid Spin-Orbit Torque/Spin-Transfer Torque-Based Multibit Cell for Area-Efficient Magnetic Random Access MemoryMondal, Debashis ; Singh, Arun ; Bhatt, Shubham ; Mishra, RahulIEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6318-6323 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
5 |
Material Type: Artigo
|
Magnetoelectric Random Access Memory-Based Circuit Design by Using Voltage-Controlled Magnetic Anisotropy in Magnetic Tunnel JunctionsWang, Kang L. ; Hochul Lee ; Amiri, Pedram KhaliliIEEE transactions on nanotechnology, 2015-11, Vol.14 (6), p.992-997 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
6 |
Material Type: Artigo
|
Nanoelectromechanical-Switch-Based Ternary Content-Addressable Memory (NEMTCAM)Lee, Jae Seong ; Choi, Woo YoungIEEE transactions on electron devices, 2021-10, Vol.68 (10), p.4903-4909 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
7 |
Material Type: Artigo
|
Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High PerformanceMulaosmanovic, Halid ; Breyer, Evelyn T. ; Mikolajick, Thomas ; Slesazeck, StefanIEEE transactions on electron devices, 2019-09, Vol.66 (9), p.3828-3833 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
8 |
Material Type: Artigo
|
BEOL-Compatible Bilayer Reprogrammable One-Time Programmable Memory for Low-Voltage OperationChen, Ying-Chen ; Lin, Chao-Cheng ; Lin, Chang-Hsien ; Chang, Yao-FengIEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1042-1047 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
9 |
Material Type: Artigo
|
Evolution of Phase-Change Memory for the Storage-Class Memory and BeyondKim, Taehoon ; Lee, SeungyunIEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1394-1406 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
10 |
Material Type: Artigo
|
A Novel Computing-in-Memory Platform Based on Hybrid Spintronic/CMOS MemoryYang, Zhi ; He, Kuiqing ; Zhang, Zeqing ; Lu, Yao ; Li, Zheng ; Wang, Yijiao ; Wang, Zhaohao ; Zhao, WeishengIEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1698-1705 [Periódico revisado por pares]New York: IEEETexto completo disponível |