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Refinado por: Base de dados/Biblioteca: American Institute of Physics (AIP) Publications remover assunto: Physics remover assunto: Silicon remover
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1
First-principles calculation of P-type Mg3Sb2 thermoelectric performance modification by Ge and Si doping
First-principles calculation of P-type Mg3Sb2 thermoelectric performance modification by Ge and Si doping
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First-principles calculation of P-type Mg3Sb2 thermoelectric performance modification by Ge and Si doping

Wang, Chengjiang ; Wang, Zhenghao ; Yang, Yifu ; Zhang, Ke ; Wang, Feifan

AIP advances, 2024-05, Vol.14 (5) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Electronic, direct optical, and phonon-assisted optical properties of 4H Si from first principles
Electronic, direct optical, and phonon-assisted optical properties of 4H Si from first principles
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Electronic, direct optical, and phonon-assisted optical properties of 4H Si from first principles

Zhang, Xiao ; Kioupakis, Emmanouil

AIP advances, 2024-03, Vol.14 (3), p.035149-035149-6 [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Linear electro-optic effect in strontium barium niobate: A first principles study
Linear electro-optic effect in strontium barium niobate: A first principles study
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Linear electro-optic effect in strontium barium niobate: A first principles study

Apte, Sohm ; Demkov, Alexander A.

Journal of applied physics, 2024-02, Vol.135 (8) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Highly tailorable thermomechanical properties of nanograined silicon: Importance of grain size and grain anisotropy
Highly tailorable thermomechanical properties of nanograined silicon: Importance of grain size and grain anisotropy
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Highly tailorable thermomechanical properties of nanograined silicon: Importance of grain size and grain anisotropy

Cao, Jiahui ; Wang, Han ; Ferrer-Argemi, Laia ; Cao, Penghui ; Lee, Jaeho

Applied physics letters, 2024-02, Vol.124 (8) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
On the importance of Akhiezer damping to thermal conductivity in silicon at elevated temperatures above 300 K
On the importance of Akhiezer damping to thermal conductivity in silicon at elevated temperatures above 300 K
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On the importance of Akhiezer damping to thermal conductivity in silicon at elevated temperatures above 300 K

Jin, Jae Sik

Journal of applied physics, 2024-01, Vol.135 (4) [Periódico revisado por pares]

Melville: American Institute of Physics

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6
Phonon diffraction and interference using nanometric features
Phonon diffraction and interference using nanometric features
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Phonon diffraction and interference using nanometric features

Desmarchelier, Paul ; Nikidis, Efstratios ; Anufriev, Roman ; Tanguy, Anne ; Nakamura, Yoshiaki ; Kioseoglou, Joseph ; Termentzidis, Konstantinos

Journal of applied physics, 2024-01, Vol.135 (1) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
Deterministic creation of strained color centers in nanostructures via high-stress thin films
Deterministic creation of strained color centers in nanostructures via high-stress thin films
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Deterministic creation of strained color centers in nanostructures via high-stress thin films

Assumpcao, D. R. ; Jin, C. ; Sutula, M. ; Ding, S. W. ; Pham, P. ; Knaut, C. M. ; Bhaskar, M. K. ; Panday, A. ; Day, A. M. ; Renaud, D. ; Lukin, M. D. ; Hu, E. ; Machielse, B. ; Loncar, M.

Applied physics letters, 2023-12, Vol.123 (24) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
Mode-resolved phonon transmittance using lattice dynamics: Robust algorithm and statistical characteristics
Mode-resolved phonon transmittance using lattice dynamics: Robust algorithm and statistical characteristics
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Mode-resolved phonon transmittance using lattice dynamics: Robust algorithm and statistical characteristics

Yang, Hong-Ao ; Cao, Bing-Yang

Journal of applied physics, 2023-10, Vol.134 (15) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
Aluminum scandium nitride films for piezoelectric transduction into silicon at gigahertz frequencies
Aluminum scandium nitride films for piezoelectric transduction into silicon at gigahertz frequencies
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Aluminum scandium nitride films for piezoelectric transduction into silicon at gigahertz frequencies

Hackett, L. ; Miller, M. ; Beaucejour, R. ; Nordquist, C. M. ; Taylor, J. C. ; Santillan, S. ; Olsson, R. H. ; Eichenfield, M.

Applied physics letters, 2023-08, Vol.123 (7) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Evolution of surface recombination property of silicon wafers during laser irradiation by differential photocarrier radiometry
Evolution of surface recombination property of silicon wafers during laser irradiation by differential photocarrier radiometry
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Evolution of surface recombination property of silicon wafers during laser irradiation by differential photocarrier radiometry

Chen, Jing ; Wang, Qian ; Tian, Ailing ; Wu, Lingling

AIP advances, 2023-07, Vol.13 (7), p.075102-075102-6 [Periódico revisado por pares]

Melville: American Institute of Physics

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