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3-D non-isothermal particle-based device simulator for p-type MOSFETs
3-D non-isothermal particle-based device simulator for p-type MOSFETs
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3-D non-isothermal particle-based device simulator for p-type MOSFETs

Rossetto, Alan C. J. ; Camargo, Vinicius V. A. ; Vasileska, Dragica ; Wirth, Gilson I.

Journal of computational electronics, 2021-10, Vol.20 (5), p.1644-1656 [Periódico revisado por pares]

New York: Springer US

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2
Ab initio calculation of thermal boundary resistance at the interface of metals with GeTe, In3SbTe2 and In2GeTe3 phase change compounds
Ab initio calculation of thermal boundary resistance at the interface of metals with GeTe, In3SbTe2 and In2GeTe3 phase change compounds
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Ab initio calculation of thermal boundary resistance at the interface of metals with GeTe, In3SbTe2 and In2GeTe3 phase change compounds

Gabardi, S. ; Campi, D. ; Bernasconi, M.

Journal of computational electronics, 2017-12, Vol.16 (4), p.1003-1010 [Periódico revisado por pares]

New York: Springer US

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3
Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials
Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials
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Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials

M’foukh, Adel ; Saint-Martin, Jérôme ; Dollfus, Philippe ; Pala, Marco

Journal of computational electronics, 2023-10, Vol.22 (5), p.1257-1263 [Periódico revisado por pares]

New York: Springer US

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4
Ab Initio Study of Electronic and Lattice Dynamical Properties of Monolayer ZnO Under Strain
Ab Initio Study of Electronic and Lattice Dynamical Properties of Monolayer ZnO Under Strain
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Ab Initio Study of Electronic and Lattice Dynamical Properties of Monolayer ZnO Under Strain

Chaudhuri, Saumen ; Das, A. K. ; Das, G. P. ; Dev, B. N.

Journal of electronic materials, 2023-03, Vol.52 (3), p.1633-1643 [Periódico revisado por pares]

New York: Springer US

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5
Ab Initio Study of the Effects of d-Block Metal (Mn, Re, Tc) Encapsulation on the Electronic, Phonon, Thermodynamic, and Gravimetric Hydrogen Capacity of BaXH4 Hydride Perovskites
Ab Initio Study of the Effects of d-Block Metal (Mn, Re, Tc) Encapsulation on the Electronic, Phonon, Thermodynamic, and Gravimetric Hydrogen Capacity of BaXH4 Hydride Perovskites
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Ab Initio Study of the Effects of d-Block Metal (Mn, Re, Tc) Encapsulation on the Electronic, Phonon, Thermodynamic, and Gravimetric Hydrogen Capacity of BaXH4 Hydride Perovskites

Ededet, Eno ; Louis, Hitler ; Chukwu, Udochukwu G. ; Magu, Thoms O. ; Udo, Aniema E. ; Adalikwu, Stephen A. ; Adeyinka, Adedapo S.

Journal of electronic materials, 2024, Vol.53 (1), p.250-264 [Periódico revisado por pares]

New York: Springer US

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6
Acoustic phonon modulation and electron–phonon interaction in semiconductor slabs and nanowires
Acoustic phonon modulation and electron–phonon interaction in semiconductor slabs and nanowires
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Acoustic phonon modulation and electron–phonon interaction in semiconductor slabs and nanowires

Uno, Shigeyasu ; Hattori, Junichi ; Nakazato, Kazuo ; Mori, Nobuya

Journal of computational electronics, 2011-06, Vol.10 (1-2), p.104-120 [Periódico revisado por pares]

Boston: Springer US

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7
Acoustic Phonons and Mechanical Properties of Ultra-Thin Porous Low-k Films: A Surface Brillouin Scattering Study
Acoustic Phonons and Mechanical Properties of Ultra-Thin Porous Low-k Films: A Surface Brillouin Scattering Study
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Acoustic Phonons and Mechanical Properties of Ultra-Thin Porous Low-k Films: A Surface Brillouin Scattering Study

Zizka, J. ; King, S. ; Every, A. ; Sooryakumar, R.

Journal of electronic materials, 2018-07, Vol.47 (7), p.3942-3950 [Periódico revisado por pares]

New York: Springer US

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8
Additional confirmation of a generalized analytical model based on multistage scattering phenomena to evaluate the ionization rates of charge carriers in semiconductors
Additional confirmation of a generalized analytical model based on multistage scattering phenomena to evaluate the ionization rates of charge carriers in semiconductors
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Additional confirmation of a generalized analytical model based on multistage scattering phenomena to evaluate the ionization rates of charge carriers in semiconductors

Acharyya, Aritra ; Chatterjee, Subhashri ; Das, Adrija ; Banerjee, Apala ; Pandey, Aditya Raj ; Yadav, Aloke ; Banerjee, J. P.

Journal of computational electronics, 2016-03, Vol.15 (1), p.34-39 [Periódico revisado por pares]

New York: Springer US

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9
Alkaline niobate based lead-free ceramic fiber/polymer 1-3 composites: processing and electromechanical properties
Alkaline niobate based lead-free ceramic fiber/polymer 1-3 composites: processing and electromechanical properties
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Alkaline niobate based lead-free ceramic fiber/polymer 1-3 composites: processing and electromechanical properties

Ma, Bing ; Zuo, Ruzhong ; Yu, Jingyao ; Ran, Yan ; Wang, Yu ; Chan, Helen Wong Lai-wa

Journal of materials science. Materials in electronics, 2011-11, Vol.22 (11), p.1697-1702 [Periódico revisado por pares]

Boston: Springer US

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10
An ab-initio investigation of mechanical and thermodynamic properties of Ag2MgSn(S/Se)4 in kesterite and stannite phases
An ab-initio investigation of mechanical and thermodynamic properties of Ag2MgSn(S/Se)4 in kesterite and stannite phases
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An ab-initio investigation of mechanical and thermodynamic properties of Ag2MgSn(S/Se)4 in kesterite and stannite phases

Srivastava, A. ; Tripathy, S. K. ; Lenka, T. R. ; Menon, P. S. ; Lin, F. ; Aberle, A. G.

Applied physics. A, Materials science & processing, 2021-08, Vol.127 (8), Article 590 [Periódico revisado por pares]

Berlin/Heidelberg: Springer Berlin Heidelberg

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