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Refinado por: assunto: Microeletrônica remover
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1
Sidewall angle influence on the finFET analog parameters
Sidewall angle influence on the finFET analog parameters
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Sidewall angle influence on the finFET analog parameters

Renato Camargo Giacomini João Antonio Martino 1959-; Marcelo Antonio Pavanello; International Symposium on Microelectronics Technology and Devices SBMICRO (22. (2007 Rio de Janeiro, RJ); Symposium on Integrated Circuits and Systems Design (20. 2007 Rio de Janeiro, RJ); Microelectronics Students Forum (7. 2007 Rio de Janeiro, RJ)

SBMicro 2007

Pennington The Electrochemical Society 2007

Item não circula. Consulte sua biblioteca.(Acessar)

2
Influence of the N-type finFET width on the zero temperature coefficient
Influence of the N-type finFET width on the zero temperature coefficient
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Influence of the N-type finFET width on the zero temperature coefficient

Marcello Bellodi João Antonio Martino 1959-; Luciano Mendes Camillo; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (22. (2007 Rio de Janeiro, RJ); Symposium on Integrated Circuits and Systems Design (20. 2007 Rio de Janeiro, RJ); Microelectronics Students Forum (7. 2007 Rio de Janeiro, RJ)

SBMicro 2007

Pennington The Electrochemical Society 2007

Item não circula. Consulte sua biblioteca.(Acessar)

3
Influence of RF frequency on production of adsorbent organic films by PECVD
Influence of RF frequency on production of adsorbent organic films by PECVD
Material Type:
Livro 		Adicionar ao Meu Espaço

Influence of RF frequency on production of adsorbent organic films by PECVD

Antonio Pereira do Nascimento Filho Cristian Otsuka Hamanaka; Dosil Pereira de Jesus; Maria Lucia Pereira da Silva 1957-; Nicole Raymonde Demarquette 1966-

Martino J.A. ; Pavanello, M.A. ; Morimoto, N.I. eds Microelectronic Technology and Devices SBMicro 2003 Pennington : Electrochemical Society, 2003

Pennington Electrochemical Society 2003

Item não circula. Consulte sua biblioteca.(Acessar)

4
The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs
The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs
Material Type:
Livro 		Adicionar ao Meu Espaço

The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs

Luciano Mendes Camillo João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Silicon-on-Insulator Technology and Devices (12 2005 Quebec, Canada)

Celler,G.K; Cristoloveanu, S.; Gámiz, F.; Fossum, J.G.; Izumi, K. International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings Pennington: The Electrochemical Society, 2005

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

5
Etching studies of post-annealed SiC films deposited by PECVD influence of the oxygen concentration
Etching studies of post-annealed SiC films deposited by PECVD influence of the oxygen concentration
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Etching studies of post-annealed SiC films deposited by PECVD influence of the oxygen concentration

Mariana A Fraga R S Pessoa; Homero S Maciel; M Massi; Sebastião Gomes dos Santos Filho 1962-; International Symposium on Microelectronics Technology and Devices SBMICRO (22. (2007 Rio de Janeiro, RJ); Symposium on Integrated Circuits and Systems Design (20. 2007 Rio de Janeiro, RJ); Microelectronics Students Forum (7. 2007 Rio de Janeiro, RJ)

SBMicro 2007

Pennington The Electrochemical Society 2007

Item não circula. Consulte sua biblioteca.(Acessar)

6
The influence of additives on electrical characteristics of DLC films deposited by reactive sputtering
The influence of additives on electrical characteristics of DLC films deposited by reactive sputtering
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

The influence of additives on electrical characteristics of DLC films deposited by reactive sputtering

Ronaldo Domingues Mansano 1964- Ana Paula Mousinho; Luís da Silva Zambom; Marina Sparvoli de Medeiros; Patrick Bernard Verdonck 1958-; M Guerino; Marcos Massi; International Symposium on Microelectronics Technology and Devices SBMICRO (19. 2004 Porto de Galinhas)

Santos, E. J. B.; Ribas, R. P.; Swart, J. eds Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03 Pennington : The Electrochemical Society, 2004

Pennington The Electrochemical Society 2004

Item não circula. Consulte sua biblioteca.(Acessar)

7
Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs
Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs

Milene Galeti João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington: The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

8
Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
Material Type:
Livro 		Adicionar ao Meu Espaço

Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications

Marcelo Antonio Pavanello Antonio Cerdeira; Miguel A Alemán; João Antonio Martino 1959-; Laurent Vancaillie; Denis Flandre; International Symposium on Silicon-on-Insulator Technology and Devices (12 2005 Quebec, Canada)

Celler,G.K; Cristoloveanu, S.; Gámiz, F.; Fossum, J.G.; Izumi, K. International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings Pennington: The Electrochemical Society, 2005

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

9
Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs
Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs

Marcelo Antonio Pavanello João Antonio Martino 1959-; Eddy Simoen; Rita Rooyackers; Nadine Collaert; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (2008 Gramado, RS)

SBMICRO 2008: Anais Pennington: The Electrochemical Society, 2008

Pennington The Electrochemical Society 2008

Item não circula. Consulte sua biblioteca.(Acessar)

10
The influence of the AC component of the plasma potential on the measurement of the ion flux
The influence of the AC component of the plasma potential on the measurement of the ion flux
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

The influence of the AC component of the plasma potential on the measurement of the ion flux

Jacobus Willibrordus Swart 1950- Patrick Bernard Verdonck 1958-; International Symposium on Microelectronics Technology and Devices SBMICRO (19. 2004 Porto de Galinhas)

Santos, E. J. B.; Ribas, R. P.; Swart, J. eds Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03 Pennington: The Electrochemical Society, 2004

Pennington The Electrochemical Society 2004

Item não circula. Consulte sua biblioteca.(Acessar)

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