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A First-Principles Study of the SF6 Decomposed Products Adsorbed Over Defective WS2 Monolayer as Promising Gas Sensing Device
A First-Principles Study of the SF6 Decomposed Products Adsorbed Over Defective WS2 Monolayer as Promising Gas Sensing Device
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A First-Principles Study of the SF6 Decomposed Products Adsorbed Over Defective WS2 Monolayer as Promising Gas Sensing Device

Chen, Dachang ; Zhang, Xiaoxing ; Xiong, Hao ; Li, Yi ; Tang, Ju ; Xiao, Song ; Zhang, Dongzhi

IEEE transactions on device and materials reliability, 2019-09, Vol.19 (3), p.473-483 [Periódico revisado por pares]

IEEE

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Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D 2 and N 2 Annealing
Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D 2 and N 2 Annealing
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Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D 2 and N 2 Annealing

Ku, Ja-Yun ; Lee, Khwang-Sun ; Jung, Dae-Han ; Wang, Dong-Hyun ; Oh, Seyoung ; Lee, Kiyoung ; Cho, Byungjin ; Bae, Hagyoul ; Park, Jun-Young

IEEE transactions on device and materials reliability, 2023-06, Vol.23 (2), p.276-280 [Periódico revisado por pares]

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3
Interfacial Charge Analysis of Heterogeneous Gate Dielectric-Gate All Around-Tunnel FET for Improved Device Reliability
Interfacial Charge Analysis of Heterogeneous Gate Dielectric-Gate All Around-Tunnel FET for Improved Device Reliability
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Interfacial Charge Analysis of Heterogeneous Gate Dielectric-Gate All Around-Tunnel FET for Improved Device Reliability

Madan, Jaya ; Chaujar, Rishu

IEEE transactions on device and materials reliability, 2016-06, Vol.16 (2), p.227-234 [Periódico revisado por pares]

New York: IEEE

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4
Unveiling T max Inside GaN HEMT Based X-Band Low-Noise Amplifier by Correlating Thermal Simulations and IR Thermographic Measurements
Unveiling T max Inside GaN HEMT Based X-Band Low-Noise Amplifier by Correlating Thermal Simulations and IR Thermographic Measurements
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Unveiling T max Inside GaN HEMT Based X-Band Low-Noise Amplifier by Correlating Thermal Simulations and IR Thermographic Measurements

Zafar, Salahuddin ; Durna, Yilmaz ; Kocer, Hasan ; Akoglu, Busra Cankaya ; Aras, Yunus Erdem ; Odabasi, Oguz ; Butun, Bayram ; Ozbay, Ekmel

IEEE transactions on device and materials reliability, 2023-03, Vol.23 (1), p.72-79 [Periódico revisado por pares]

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5
The Novel Structure to Enhancement I on / I off Ratio Based on Field Effect Diode
The Novel Structure to Enhancement I on / I off Ratio Based on Field Effect Diode
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The Novel Structure to Enhancement I on / I off Ratio Based on Field Effect Diode

Sharafi, Foad ; Orouji, Ali A. ; Soroosh, Mohammad

IEEE transactions on device and materials reliability, 2021-09, Vol.21 (3), p.389-393 [Periódico revisado por pares]

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6
Applied physics journal to go online 1995
Applied physics journal to go online 1995
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Applied physics journal to go online 1995

Information today, 1994-05, Vol.11 (5), p.5

Medford: Information Today, Inc

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7
Guest Editorial TDMR 2021 IIRW Special Section
Guest Editorial TDMR 2021 IIRW Special Section
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Guest Editorial TDMR 2021 IIRW Special Section

Ring, Matthew

IEEE transactions on device and materials reliability, 2022-09, Vol.22 (3), p.319-321 [Periódico revisado por pares]

New York: IEEE

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8
Power Cycling Reliability of Power Module: A Survey
Power Cycling Reliability of Power Module: A Survey
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Power Cycling Reliability of Power Module: A Survey

Durand, C. ; Klingler, M. ; Coutellier, D. ; Naceur, H.

IEEE transactions on device and materials reliability, 2016-03, Vol.16 (1), p.80-97 [Periódico revisado por pares]

New York: IEEE

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9
Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device
Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device
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Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device

Borong Hu ; Ortiz Gonzalez, Jose ; Li Ran ; Hai Ren ; Zheng Zeng ; Wei Lai ; Bing Gao ; Alatise, Olayiwola ; Hua Lu ; Bailey, Christopher ; Mawby, Phil

IEEE transactions on device and materials reliability, 2017-12, Vol.17 (4), p.727-737 [Periódico revisado por pares]

New York: IEEE

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10
Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation
Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation
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Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation

Puschkarsky, Katja ; Reisinger, Hans ; Aichinger, Thomas ; Gustin, Wolfgang ; Grasser, Tibor

IEEE transactions on device and materials reliability, 2018-06, Vol.18 (2), p.144-153 [Periódico revisado por pares]

IEEE

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