Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Circular dichroism in a three-dimensional semiconductor chiral photonic crystalTakahashi, S. ; Tajiri, T. ; Ota, Y. ; Tatebayashi, J. ; Iwamoto, S. ; Arakawa, Y.Applied physics letters, 2014-08, Vol.105 (5) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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2 |
Material Type: Artigo
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Position dependent optical coupling between single quantum dots and photonic crystal nanocavitiesKuruma, K. ; Ota, Y. ; Kakuda, M. ; Takamiya, D. ; Iwamoto, S. ; Arakawa, Y.Applied physics letters, 2016-08, Vol.109 (7) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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3 |
Material Type: Artigo
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Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowireTatebayashi, J. ; Ota, Y. ; Ishida, S. ; Nishioka, M. ; Iwamoto, S. ; Arakawa, Y.Applied physics letters, 2014-09, Vol.105 (10) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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4 |
Material Type: Artigo
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Site-controlled formation of InAs/GaAs quantum-dot-in-nanowires for single photon emittersTatebayashi, J. ; Ota, Y. ; Ishida, S. ; Nishioka, M. ; Iwamoto, S. ; Arakawa, Y.Applied physics letters, 2012-06, Vol.100 (26) [Periódico revisado por pares]Texto completo disponível |
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5 |
Material Type: Artigo
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Demonstration of a three-dimensional photonic crystal nanocavity in a ⟨110⟩-layered diamond structureTajiri, T. ; Takahashi, S. ; Ota, Y. ; Tatebayashi, J. ; Iwamoto, S. ; Arakawa, Y.Applied physics letters, 2015-08, Vol.107 (7) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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6 |
Material Type: Artigo
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Competing influence of an in-plane electric field on the Stark shifts in a semiconductor quantum dotNakaoka, T ; Tamura, Y ; Saito, T ; Miyazawa, T ; Watanabe, K ; Ota, Y ; Iwamoto, S ; Arakawa, YApplied physics letters, 2011-10, Vol.99 (18), p.181109-181109-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
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7 |
Material Type: Artigo
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Room-temperature continuous-wave vertical-cavity surface-emitting GaAs injection lasersTAI, K ; FISCHER, R. J ; SEABURY, C. W ; OLSSON, N. A ; HUO, T.-C. D ; OTA, Y ; CHO, A. YApplied physics letters, 1989-12, Vol.55 (24), p.2473-2475 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
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8 |
Material Type: Artigo
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A technique for rapidly alternating boron and arsenic doping in ion-implanted silicon molecular beam epitaxySwartz, R. G. ; McFee, J. H. ; Voshchenkov, A. M. ; Finegan, S. N. ; Ota, Y.Applied physics letters, 1982-02, Vol.40 (3), p.239-241 [Periódico revisado por pares]Texto completo disponível |
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9 |
Material Type: Artigo
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Low barrier height Schottky mixer diode using super thin silicon films by molecular beam epitaxyBallamy, William C. ; Ota, YusukeApplied physics letters, 1981-01, Vol.39 (8), p.629-630 [Periódico revisado por pares]Texto completo disponível |
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10 |
Material Type: Artigo
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Erratum: A technique for rapidly alternating boron and arsenic doping in ion-implanted silicon molecular beam epitaxy [Appl. Phys. Lett. 4 0 , 239 (1982)]Swartz, R. G. ; McFee, J. H. ; Voshchenkov, A. M. ; Finegan, S. N. ; Ota, Y.Applied physics letters, 1982-06, Vol.40 (12), p.1046-1046 [Periódico revisado por pares]Texto completo disponível |