Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substratesBaidus, N. V. ; Aleshkin, V. Ya ; Dubinov, A. A. ; Kudryavtsev, K. E. ; Nekorkin, S. M. ; Novikov, A. V. ; Pavlov, D. A. ; Rykov, A. V. ; Sushkov, A. A. ; Shaleev, M. V. ; Yunin, P. A. ; Yurasov, D. V. ; Yablonskiy, A. N. ; Krasilnik, Z. F.Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1527-1530 [Periódico revisado por pares]Moscow: Pleiades PublishingTexto completo disponível |
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2 |
Material Type: Artigo
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Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowiresMancini, L. ; Fontana, Y. ; Conesa-Boj, S. ; Blum, I. ; Vurpillot, F. ; Francaviglia, L. ; Russo-Averchi, E. ; Heiss, M. ; Arbiol, J. ; Morral, A. Fontcuberta i ; Rigutti, L.Applied physics letters, 2014-12, Vol.105 (24) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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3 |
Material Type: Artigo
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Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrateAleshkin, V. Ya ; Baidus, N. V. ; Dubinov, A. A. ; Fefelov, A. G. ; Krasilnik, Z. F. ; Kudryavtsev, K. E. ; Nekorkin, S. M. ; Novikov, A. V. ; Pavlov, D. A. ; Samartsev, I. V. ; Skorokhodov, E. V. ; Shaleev, M. V. ; Sushkov, A. A. ; Yablonskiy, A. N. ; Yunin, P. A. ; Yurasov, D. V.Applied physics letters, 2016-08, Vol.109 (6) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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4 |
Material Type: Artigo
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Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxyDiNezza, Michael J. ; Zhao, Xin-Hao ; Liu, Shi ; Kirk, Alexander P. ; Zhang, Yong-HangApplied physics letters, 2013-11, Vol.103 (19) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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5 |
Material Type: Artigo
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Optical Properties of InGaAs/InAlAs Metamorphic Nanoheterostructures for Photovoltaic Converters of Laser and Solar RadiationEmel’yanov, V. M. ; Kalyuzhnyy, N. A. ; Mintairov, S. A. ; Shvarts, M. Z.Technical physics letters, 2018-10, Vol.44 (10), p.877-880 [Periódico revisado por pares]Moscow: Pleiades PublishingTexto completo disponível |
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6 |
Material Type: Artigo
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Suppression of alloy fluctuations in GaAs-AlGaAs core-shell nanowiresLoitsch, Bernhard ; Jeon, Nari ; Döblinger, Markus ; Winnerl, Julia ; Parzinger, Eric ; Matich, Sonja ; Wurstbauer, Ursula ; Riedl, Hubert ; Abstreiter, Gerhard ; Finley, Jonathan J. ; Lauhon, Lincoln J. ; Koblmüller, GregorApplied physics letters, 2016-08, Vol.109 (9) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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7 |
Material Type: Artigo
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Electron spin relaxation time in (110) InGaAs/InAlAs quantum wellsYokota, Nobuhide ; Yasuda, Yusuke ; Ikeda, Kazuhiro ; Kawaguchi, HitoshiJournal of applied physics, 2014-07, Vol.116 (2) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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8 |
Material Type: Artigo
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Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain controlStettner, T. ; Zimmermann, P. ; Loitsch, B. ; Döblinger, M. ; Regler, A. ; Mayer, B. ; Winnerl, J. ; Matich, S. ; Riedl, H. ; Kaniber, M. ; Abstreiter, G. ; Koblmüller, G. ; Finley, J. J.Applied physics letters, 2016-01, Vol.108 (1) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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9 |
Material Type: Artigo
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Leaky wave in high-power AlGaAs/InGaAs/GaAs semiconductor lasersBobretsova, Yu.K. ; Veselov, D.A. ; Klimov, A.A. ; Kryuchkov, V.A. ; Shashkin, I.S. ; Slipchenko, S.O. ; Pikhtin, N.A.Quantum electronics (Woodbury, N.Y.), 2020-08, Vol.50 (8), p.722-726 [Periódico revisado por pares]Bristol: Kvantovaya Elektronika, Turpion Ltd and IOP PublishingTexto completo disponível |
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10 |
Material Type: Artigo
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Enhancement of carrier lifetimes in type-II quantum dot/quantum well hybrid structuresCouto, O. D. D. ; de Almeida, P. T. ; dos Santos, G. E. ; Balanta, M. A. G. ; Andriolo, H. F. ; Brum, J. A. ; Brasil, M. J. S. P. ; Iikawa, F. ; Liang, B. L. ; Huffaker, D. L.Journal of applied physics, 2016-08, Vol.120 (8) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |