Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Surface emitting semiconductor lasersIga, K. ; Koyama, F. ; Kinoshita, S.IEEE J. Quant. Electron.; (United States), 1988-09, Vol.24 (9), p.1845-1855 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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The effect of oxygen on the properties of AlGaAs solar cells grown by molecular-beam epitaxyAMANO, C ; ANDO, K ; YAMAGUCHI, MJ. Appl. Phys.; (United States), 1988-04, Vol.63 (8), p.2853-2856 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
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3 |
Material Type: Artigo
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A new approach to high-efficiency multi-band-gap solar cellsBARNHAM, K. W. J ; DUGGAN, GJournal of applied physics, 1990-04, Vol.67 (7), p.3490-3493 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
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4 |
Material Type: Artigo
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Circularly symmetric operation of a concentric-circle-grating, surface-emitting, AlGaAs/GaAs quantum-well semiconductor laserERDOGAN, T ; KING, O ; WICKS, G. W ; HALL, D. G ; ANDERSON, E. H ; ROOKS, M. JApplied physics letters, 1992-04, Vol.60 (16), p.1921-1923 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
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5 |
Material Type: Artigo
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Band-gap narrowing in ordered and disordered semiconductor alloysWEI, S.-H ; ZUNGER, AApplied physics letters, 1990-02, Vol.56 (7), p.662-664 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
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6 |
Material Type: Artigo
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High-efficiency, one-sun (22.3% at air mass 0; 23.9% at air mass 1.5) monolithic two-junction cascade solar cell grown by metalorganic vapor phase epitaxyCHUNG, B.-C ; VIRSHUP, G. F ; WERTHEN, J. GAppl. Phys. Lett.; (United States), 1988-05, Vol.52 (22), p.1889-1891 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
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7 |
Material Type: Artigo
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Extremely wide modulation bandwidth in a low threshold current strained quantum well laserSUEMUNE, I ; COLDREN, L. A ; YAMANISHI, M ; KAN, YAppl. Phys. Lett.; (United States), 1988-10, Vol.53 (15), p.1378-1383 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
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8 |
Material Type: Artigo
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Two-dimensional carrier-carrier screening in a quantum wellBIGOT, J.-Y ; PORTELLA, M. T ; SCHOENLEIN, R. W ; CUNNINGHAM, J. E ; SHANK, C. VPhysical review letters, 1991-07, Vol.67 (5), p.636-639 [Periódico revisado por pares]Ridge, NY: American Physical SocietyTexto completo disponível |
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9 |
Material Type: Artigo
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Steady-state carrier escape from single quantum wellsNelson, J. ; Paxman, M. ; Barnham, K.W.J. ; Roberts, J.S. ; Button, C.IEEE journal of quantum electronics, 1993-06, Vol.29 (6), p.1460-1468 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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10 |
Material Type: Artigo
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Single quantum wire semiconductor lasersKAPON, E ; SIMHONY, S ; BHAT, R ; HWANG, D. MApplied physics letters, 1989-12, Vol.55 (26), p.2715-2717 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |