Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructuresFan, Dongsheng ; Zeng, Zhaoquan ; Hu, Xian ; Dorogan, Vitaliy G. ; Li, Chen ; Benamara, Mourad ; Hawkridge, Michael E. ; Mazur, Yuriy I. ; Yu, Shui-Qing ; Johnson, Shane R. ; Wang, Zhiming M. ; Salamo, Gregory J.Applied physics letters, 2012-10, Vol.101 (18) [Periódico revisado por pares]United StatesTexto completo disponível |
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2 |
Material Type: Artigo
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Fine Structure of Levels and Piezospectroscopy of A+ Centers in GaAs/AlGaAs Quantum WellsPetrov, P. V. ; Kokurin, I. A. ; Ivánov, Yu. L. ; Cirlin, G. E. ; Sedov, V. E. ; Averkiev, N. S.Physics of the solid state, 2018-02, Vol.60 (2), p.339-346 [Periódico revisado por pares]Moscow: Pleiades PublishingTexto completo disponível |
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3 |
Material Type: Artigo
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Evanescent-wave pumped room-temperature single-mode GaAs/AlGaAs core-shell nanowire lasersWei, Wei ; Liu, Yange ; Zhang, Xia ; Wang, Zhi ; Ren, XiaominApplied physics letters, 2014-06, Vol.104 (22) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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4 |
Material Type: Artigo
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Investigating effect of temperature on barrier height of PWB diodesAkura, M ; Dunn, G.MElectronics letters, 2018-01, Vol.54 (1), p.42-43 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
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5 |
Material Type: Artigo
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Gold-free GaAs/GaAsSb heterostructure nanowires grown on siliconPlissard, S ; Dick, K A ; Wallart, X ; Caroff, PApplied physics letters, 2010-03, Vol.96 (12), p.121901-121901-3 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |
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6 |
Material Type: Artigo
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Electron holographic tomography for mapping the three-dimensional distribution of electrostatic potential in III-V semiconductor nanowiresWolf, D ; Lichte, H ; Pozzi, G ; Prete, P ; Lovergine, NApplied physics letters, 2011-06, Vol.98 (26), p.264103-264103-3 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |
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7 |
Material Type: Artigo
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Investigation of interfaces in AlSb/InAs/Ga0.71In0.29Sb quantum wells by photoluminescenceJunliang, Xing ; Yu, Zhang ; Yongping, Liao ; Juan, Wang ; Wei, Xiang ; Hongyue, Hao ; Yingqiang, Xu ; Zhichuan, NiuJournal of applied physics, 2014-09, Vol.116 (12) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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8 |
Material Type: Artigo
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Mechanisms of nanodot formation under focused ion beam irradiation in compound semiconductorsGrossklaus, K. A. ; Millunchick, J. M.Journal of applied physics, 2011-01, Vol.109 (1) [Periódico revisado por pares]United StatesTexto completo disponível |
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9 |
Material Type: Artigo
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Resonant optical reflection by a periodic system of the quantum well excitons at the second quantum stateChaldyshev, V V ; Chen, Yuechao ; Poddubny, A N ; Vasil'ev, A P ; Liu, ZhihengApplied physics letters, 2011-02, Vol.98 (7), p.073112-073112-3 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |
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10 |
Material Type: Artigo
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A terahertz plasmon cavity detectorDyer, G C ; Vinh, N Q ; Allen, S J ; Aizin, G R ; Mikalopas, J ; Reno, J L ; Shaner, E AApplied physics letters, 2010-11, Vol.97 (19), p.193507-193507-3 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |