Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
Electron spin relaxation time in (110) InGaAs/InAlAs quantum wellsYokota, Nobuhide ; Yasuda, Yusuke ; Ikeda, Kazuhiro ; Kawaguchi, HitoshiJournal of applied physics, 2014-07, Vol.116 (2) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
2 |
Material Type: Artigo
|
Enhancement of carrier lifetimes in type-II quantum dot/quantum well hybrid structuresCouto, O. D. D. ; de Almeida, P. T. ; dos Santos, G. E. ; Balanta, M. A. G. ; Andriolo, H. F. ; Brum, J. A. ; Brasil, M. J. S. P. ; Iikawa, F. ; Liang, B. L. ; Huffaker, D. L.Journal of applied physics, 2016-08, Vol.120 (8) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
3 |
Material Type: Artigo
|
Optical properties of type-II AlInAs/AlGaAs quantum dots by photoluminescence studiesSaïdi, I. ; Neffati, R. ; Ben Radhia, S. ; Boujdaria, K. ; Lemaître, A. ; Bernardot, F. ; Testelin, C.Journal of applied physics, 2016-07, Vol.120 (3) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
4 |
Material Type: Artigo
|
Bolometric detection of magnetoplasma resonances in microwave absorption by two-dimensional electron systems based on doping layer conductivity measurements in GaAs/AlGaAs heterostructuresDorozhkin, S. I. ; Sychev, D. V. ; Kapustin, A. A.Journal of applied physics, 2014-11, Vol.116 (20) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
5 |
Material Type: Artigo
|
Excitation wavelength dependence of the anomalous circular photogalvanic effect in undoped InGaAs/AlGaAs quantum wellsZhu, L. P. ; Liu, Y. ; Jiang, C. Y. ; Qin, X. D. ; Li, Y. ; Gao, H. S. ; Chen, Y. H.Journal of applied physics, 2014-02, Vol.115 (8) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
6 |
Material Type: Artigo
|
Quantization and anomalous structures in the conductance of Si/SiGe quantum point contactsvon Pock, J. F. ; Salloch, D. ; Qiao, G. ; Wieser, U. ; Hackbarth, T. ; Kunze, U.Journal of applied physics, 2016-04, Vol.119 (13) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
7 |
Material Type: Artigo
|
Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wellsYu, J. L. ; Cheng, S. Y. ; Lai, Y. F. ; Zheng, Q. ; Chen, Y. H. ; Tang, C. G.Journal of applied physics, 2015-01, Vol.117 (1) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
8 |
Material Type: Artigo
|
Effects of bias and temperature on the intersubband absorption in very long wavelength GaAs/AlGaAs quantum well infrared photodetectorsLiu, X. H. ; Zhou, X. H. ; Li, N. ; Wang, L. ; Sun, Q. L. ; Liao, K. S. ; Huang, L. ; Li, Q. ; Li, Z. F. ; Chen, P. P. ; Lu, W.Journal of applied physics, 2014-03, Vol.115 (12) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
9 |
Material Type: Artigo
|
Room temperature, single mode emission from two-section coupled cavity InGaAs/AlGaAs/GaAs quantum cascade laserPierściński, K. ; Pierścińska, D. ; Pluska, M. ; Gutowski, P. ; Sankowska, I. ; Karbownik, P. ; Czerwinski, A. ; Bugajski, M.Journal of applied physics, 2015-10, Vol.118 (13) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
10 |
Material Type: Artigo
|
Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructureBarbosa, B. G. ; Arakaki, H. ; de Souza, C. A. ; Pusep, Yu. A.Journal of applied physics, 2014-03, Vol.115 (11) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |