Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Ata de Congresso
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GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance StudyWheeldon, Jeffrey F ; Valdivia, Christopher E ; Walker, Alex ; Kolhatkar, Gitanja ; Masson, Denis ; Riel, Bruno ; Fafard, Simon ; Jaouad, Abdelatif ; Turala, Artur ; Arees, RichardAIP Conference Proceedings, 2010, Vol.1277 (1) [Periódico revisado por pares]United StatesSem texto completo |
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2 |
Material Type: Artigo
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Gold-free GaAs/GaAsSb heterostructure nanowires grown on siliconPlissard, S ; Dick, K A ; Wallart, X ; Caroff, PApplied physics letters, 2010-03, Vol.96 (12), p.121901-121901-3 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |
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3 |
Material Type: Artigo
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Theoretical And Experimental Studies Of The Effects Of Rapid Thermal Annealing In GaAs/AlGaAs Quantum Dots Grown By Droplet EpitaxyMoon, P ; Ha, S-K ; Song, J D ; Lim, J Y ; Bounouar, S ; Donatini, F ; Dang, L S ; Poizat, J P ; Kim, J S ; Choi, W JAIP conference proceedings, 2012-11, Vol.1399 (1) [Periódico revisado por pares]United StatesSem texto completo |
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4 |
Material Type: Artigo
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Photoluminescence Polarization Anisotropy in a Single Heterostructured III-V Nanowire with Mixed Crystal PhasesMoses, A F ; Hoang, T B ; Ahtapodov, L ; Dheeraj, D L ; van Helvoort, ATJ ; Fimland, BO ; Weman, HAIP conference proceedings, 2012-11, Vol.1399 (1) [Periódico revisado por pares]United StatesSem texto completo |
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5 |
Material Type: Artigo
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Electron holographic tomography for mapping the three-dimensional distribution of electrostatic potential in III-V semiconductor nanowiresWolf, D ; Lichte, H ; Pozzi, G ; Prete, P ; Lovergine, NApplied physics letters, 2011-06, Vol.98 (26), p.264103-264103-3 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |
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6 |
Material Type: Ata de Congresso
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Spin polarization in quantum Hall state obtained by Kerr rotation spectraIto, H ; Seo, M ; Fukuoka, D ; Oto, K ; Muro, K ; Hirayama, Y ; Kumada, NAIP conference proceedings, 2011, Vol.1399 (1) [Periódico revisado por pares]United StatesSem texto completo |
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7 |
Material Type: Ata de Congresso
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Micro-Photoluminescence Characterization of Low Density Droplet GaAs Quantum Dots for Single Photon SourcesHa, S-K ; Bounouar, S ; Song, J D ; Lim, J Y ; Donatini, F ; Dang, L S ; Poizat, J P ; Kim, J S ; Choi, W J ; Han, I KAIP conference proceedings, 2011, Vol.1399 (1) [Periódico revisado por pares]United StatesSem texto completo |
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8 |
Material Type: Artigo
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Mechanisms of nanodot formation under focused ion beam irradiation in compound semiconductorsGrossklaus, K. A. ; Millunchick, J. M.Journal of applied physics, 2011-01, Vol.109 (1) [Periódico revisado por pares]United StatesTexto completo disponível |
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9 |
Material Type: Artigo
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Resonant optical reflection by a periodic system of the quantum well excitons at the second quantum stateChaldyshev, V V ; Chen, Yuechao ; Poddubny, A N ; Vasil'ev, A P ; Liu, ZhihengApplied physics letters, 2011-02, Vol.98 (7), p.073112-073112-3 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |
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10 |
Material Type: Artigo
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A terahertz plasmon cavity detectorDyer, G C ; Vinh, N Q ; Allen, S J ; Aizin, G R ; Mikalopas, J ; Reno, J L ; Shaner, E AApplied physics letters, 2010-11, Vol.97 (19), p.193507-193507-3 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |