Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Gallium and oxygen accumulations on gallium nitride surfaces following argon ion milling in ultra-high vacuum conditionsButcher, K.S.A ; Afifuddin ; Tansley, T.L ; Brack, N ; Pigram, P.J ; Timmers, H ; Prince, K.E ; Elliman, R.GApplied surface science, 2004-05, Vol.230 (1), p.18-23 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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PrefaceButcher, K.S.AJournal of crystal growth, 2004-08, Vol.269 (1), p.vii [Periódico revisado por pares]Texto completo disponível |
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3 |
Material Type: Artigo
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GaN–InGaN LED efficiency reduction from parasitic electron currents in p-GaNTogtema, G. ; Georgiev, V. ; Georgieva, D. ; Gergova, R. ; Butcher, K.S.A. ; Alexandrov, D.Solid-state electronics, 2015-01, Vol.103, p.44-48 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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4 |
Material Type: Artigo
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An instrumental solution to the phenomenon of negative capacitances in semiconductorsButcher, K.S.A ; Tansley, T.L ; Alexiev, DSolid-state electronics, 1996-03, Vol.39 (3), p.333-336 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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5 |
Material Type: Artigo
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Growth mechanisms in excimer laser photolytic deposition of gallium nitride at 500°CZhou, Bing ; Li, Zin ; Tansley, T.L. ; Butcher, K.S.A.Journal of crystal growth, 1996-03, Vol.160 (3), p.201-206 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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6 |
Material Type: Artigo
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Effects of crystallinity and chemical variation on apparent band-gap shift in polycrystalline indium nitrideChen, P.P.-T. ; Downes, J.E. ; Fernandes, A.J. ; Butcher, K.S.A. ; Wintrebert-Fouquet, M. ; Wuhrer, R. ; Phillips, M.R.Thin solid films, 2011-01, Vol.519 (6), p.1831-1836 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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Piezoelectric coefficient of InN films prepared by radio-frequency sputteringWintrebert-Fouquet, M. ; Butcher, K.S.A. ; Guy, I.L. ; Zheng, Z.Thin solid films, 2008-09, Vol.516 (21), p.7267-7270 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
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8 |
Material Type: Artigo
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Impurity bound polaron in wurtzite GaN/AlN quantum wells: The interface optical-phonon and the built-in electric field effectsLiu, Dong ; Shi, Jun-jie ; Butcher, K.S.A.Superlattices and microstructures, 2006-09, Vol.40 (3), p.180-190Elsevier LtdTexto completo disponível |
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9 |
Material Type: Artigo
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A Raman spectroscopy study of InNKuball, M ; Pomeroy, J.W ; Wintrebert-Fouquet, M ; Butcher, K.S.A ; Lu, Hai ; Schaff, W.JJournal of crystal growth, 2004-08, Vol.269 (1), p.59-65 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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10 |
Material Type: Artigo
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High-resolution X-ray photoelectron spectroscopy of Al Ga1−SbRamelan, A.H ; Butcher, K.S.A ; Goldys, E.M ; Tansley, T.LApplied surface science, 2004-05, Vol.229 (1-4), p.263-267 [Periódico revisado por pares]Texto completo disponível |