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Refinado por: Nome da Publicação: Applied Physics Letters remover
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1
An UV photochromic memory effect in proton-based WO3 electrochromic devices
An UV photochromic memory effect in proton-based WO3 electrochromic devices
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An UV photochromic memory effect in proton-based WO3 electrochromic devices

Zhang, Yong ; Lee, S.-H. ; Mascarenhas, A. ; Deb, S. K.

Applied physics letters, 2008-11, Vol.93 (20) [Periódico revisado por pares]

United States

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2
Synchrotron based photoemission study on the band alignment and interface at ZnO/GaP hetero-junction
Synchrotron based photoemission study on the band alignment and interface at ZnO/GaP hetero-junction
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Synchrotron based photoemission study on the band alignment and interface at ZnO/GaP hetero-junction

Singh, S. D. ; Ganguli, Tapas ; Ajimsha, R. S. ; Misra, P. ; Phase, D. M. ; Kukreja, L. M. ; Deb, S. K.

Applied physics letters, 2014-01, Vol.104 (1), p.12109 [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Band alignment and interfacial structure of ZnO/Ge heterojunction investigated by photoelectron spectroscopy
Band alignment and interfacial structure of ZnO/Ge heterojunction investigated by photoelectron spectroscopy
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Band alignment and interfacial structure of ZnO/Ge heterojunction investigated by photoelectron spectroscopy

Singh, S D ; Ajimsha, R S ; Sahu, Vikas ; Kumar, Ravi ; Misra, P ; Phase, D M ; Oak, S M ; Kukreja, L M ; Ganguli, Tapas ; Deb, S K

Applied physics letters, 2012-11, Vol.101 (21) [Periódico revisado por pares]

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4
Enhancement and stabilization of porous silicon photoluminescence by oxygen incorporation with a remote-plasma treatment
Enhancement and stabilization of porous silicon photoluminescence by oxygen incorporation with a remote-plasma treatment
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Enhancement and stabilization of porous silicon photoluminescence by oxygen incorporation with a remote-plasma treatment

XIAO, Y ; HEBEN, M. J ; MCCULLOUGH, J. M ; TSUO, Y. S ; PANKOVE, J. I ; DEB, S. K

Applied physics letters, 1993-03, Vol.62 (10), p.1152-1154 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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5
Electronic properties versus composition of thin films of CuInSe2
Electronic properties versus composition of thin films of CuInSe2
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Electronic properties versus composition of thin films of CuInSe2

Noufi, R. ; Axton, R. ; Herrington, C. ; Deb, S. K.

Applied physics letters, 1984-09, Vol.45 (6), p.668-670 [Periódico revisado por pares]

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6
Electrical conductivity of p-type CuInSe2 thin films
Electrical conductivity of p-type CuInSe2 thin films
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Electrical conductivity of p-type CuInSe2 thin films

DATTA, T ; NOFI, R ; DEB, S. K

Applied physics letters, 1985-11, Vol.47 (10), p.1102-1104 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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7
Raman spectroscopic investigation of superconducting YBa2Cu3O7-x, semiconducting YBa2Cu3O6+x, and possible impurity phases
Raman spectroscopic investigation of superconducting YBa2Cu3O7-x, semiconducting YBa2Cu3O6+x, and possible impurity phases
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Raman spectroscopic investigation of superconducting YBa2Cu3O7-x, semiconducting YBa2Cu3O6+x, and possible impurity phases

MASCARENHAS, A ; GELLER, S ; XU, L. C ; KATAYAMA-YOSHIDA, H ; PANKOVE, J. I ; DEB, S. K

Applied physics letters, 1988-01, Vol.52 (3), p.242-243 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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8
Electric field and infrared-induced recovery of metastability in amorphous hydrogenated silicon
Electric field and infrared-induced recovery of metastability in amorphous hydrogenated silicon
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Electric field and infrared-induced recovery of metastability in amorphous hydrogenated silicon

BHATTACHARYA, E ; PANKOVE, J. I ; DEB, S. K

Appl. Phys. Lett.; (United States), 1987-09, Vol.51 (13), p.998-1000 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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9
Ion beam hydrogenation of amorphous silicon
Ion beam hydrogenation of amorphous silicon
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Ion beam hydrogenation of amorphous silicon

TSUO, Y. S ; SMITH, E. B ; DEB, S. K

Appl. Phys. Lett.; (United States), 1987-11, Vol.51 (18), p.1436-1438 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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10
An UV photochromic memory effect in proton-based WO{sub 3} electrochromic devices
An UV photochromic memory effect in proton-based WO{sub 3} electrochromic devices
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An UV photochromic memory effect in proton-based WO{sub 3} electrochromic devices

Zhang Yong ; Lee, S.-H. ; Mascarenhas, A. ; Deb, S. K.

Applied physics letters, 2008-11, Vol.93 (20) [Periódico revisado por pares]

United States

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