Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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(001) and (11n)n = 1,3 GaAs substrate orientations for growth of GaN layers by AP-MOVPE: impact of GaN buffer layer thicknessLaifi, J. ; Bchetnia, A.Journal of materials science. Materials in electronics, 2022-04, Vol.33 (10), p.7587-7597 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
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2 |
Material Type: Artigo
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(1 1 1)B growth elimination in GaAs MBE of (0 0 1)-(1 1 1)B mesa structure by suppressing 2D-nucleationKishimoto, D. ; Nishinaga, T. ; Naritsuka, S. ; Noda, T. ; Nakamura, Y. ; Sakaki, H.Journal of crystal growth, 2000-05, Vol.212 (3), p.373-378 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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1/f Noise in HgCdTe Focal-Plane ArraysKinch, M.A. ; Strong, R.L. ; Schaake, C.A.Journal of electronic materials, 2013-11, Vol.42 (11), p.3243-3251 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
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4 |
Material Type: Artigo
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10 nm TriGate High k Underlap FinFETs: Scaling Effects and Analog PerformanceBha, J. K. Kasthuri ; Priya, P. Aruna ; Joseph, H. Bijo ; Thiruvadigal, D. JohnSILICON, 2020-09, Vol.12 (9), p.2111-2119 [Periódico revisado por pares]Dordrecht: Springer NetherlandsTexto completo disponível |
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5 |
Material Type: Artigo
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10th Anniversary of Applied Sciences-Invited Papers in Chemistry SectionAdeloju, Samuel B.Applied sciences, 2021-03, Vol.11 (6), p.2831 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
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6 |
Material Type: Artigo
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1.2 kV Stepped Oxide Trench Insulated Gate Bipolar Transistor with Low Loss for Fast Switching ApplicationVaidya, Mahesh ; Naugarhiya, Alok ; Verma, Shrish ; Mishra, Guru PrasadECS journal of solid state science and technology, 2022-11, Vol.11 (11), p.111008 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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7 |
Material Type: Artigo
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1,3,5-Triazine derivatives as new electron transport―type host materials for highly efficient green phosphorescent OLEDsCHEN, Hsiao-Fan ; YANG, Shang-Jung ; TSAI, Zhen-Han ; HUNG, Wen-Yi ; WANG, Ting-Chih ; WONG, Ken-TsungJournal of materials chemistry, 2009-01, Vol.19 (43), p.8112-8118 [Periódico revisado por pares]Cambridge: Royal Society of ChemistryTexto completo disponível |
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8 |
Material Type: Artigo
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1550 nm Compatible Ultrafast Photoconductive Material Based on a GaAs/ErAs/GaAs HeterostructureZhang, Kedong ; Li, Yiwen ; Ren, Yifeng ; Fan, Xing ; Li, Chen ; Li, Jianfei ; Meng, Yafei ; Deng, Yu ; Wang, Fengqiu ; Lu, Hong ; Chen, Yan‐FengAdvanced optical materials, 2021-07, Vol.9 (13), p.n/aWeinheim: Wiley Subscription Services, IncTexto completo disponível |
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9 |
Material Type: Artigo
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1.73 eV AlGaAs/InGaP heterojunction solar cell grown by MBE with 18.7% efficiencyBen Slimane, Ahmed ; Michaud, Amadeo ; Mauguin, Olivia ; Lafosse, Xavier ; Bercegol, Adrien ; Lombez, Laurent ; Harmand, Jean‐Christophe ; Collin, StéphaneProgress in photovoltaics, 2020-05, Vol.28 (5), p.393-402 [Periódico revisado por pares]Bognor Regis: Wiley Subscription Services, IncTexto completo disponível |
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10 |
Material Type: Artigo
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1T and 2H heterophase MoS2 for enhanced sensitivity of GaN transistor-based mercury ions sensorSharma, Nipun ; Nigam, Adarsh ; Bin Dolmanan, Surani ; Gupta, Ankur ; Tripathy, Sudhiranjan ; Kumar, MaheshNanotechnology, 2022-06, Vol.33 (26) [Periódico revisado por pares]IOP PublishingTexto completo disponível |