Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Livro
|
Conducting Organic Materials and DevicesJain, Suresh C ; Willander, M ; Kumar, VSan Diego: Elsevier Science & Technology 2007Texto completo disponível |
|
2 |
Material Type: Artigo
|
Room-temperature gas sensing of ZnO-based gas sensor: A reviewZhu, Ling ; Zeng, WenSensors and actuators. A. Physical., 2017-11, Vol.267, p.242-261 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
|
3 |
Material Type: Artigo
|
Cobalt-doped cerium oxide nanoparticles: Enhanced photocatalytic activity under UV and visible light irradiationSaranya, Jayapalan ; Ranjith, Kugalur Shanmugam ; Saravanan, Padmanaban ; Mangalaraj, Devanesan ; Rajendra Kumar, Ramasamy ThangaveluMaterials science in semiconductor processing, 2014-10, Vol.26, p.218-224 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |
|
4 |
Material Type: Artigo
|
Ni silicide nanowires analysis by atom probe tomographyEl Kousseifi, M. ; Panciera, F. ; Hoummada, K. ; Descoins, M. ; Baron, T. ; Mangelinck, D.Microelectronic engineering, 2014-05, Vol.120, p.47-51 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
|
5 |
Material Type: Artigo
|
Carbon nanotubes for nanoscale low temperature flip chip connectionsHermann, Sascha ; Pahl, Barbara ; Ecke, Ramona ; Schulz, Stefan E. ; Gessner, ThomasMicroelectronic engineering, 2010-03, Vol.87 (3), p.438-442 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
|
6 |
Material Type: Artigo
|
Bias-temperature stress of Al on porous low- k dielectricsHe, Ming ; Li, Huafang ; Wang, Pei-I ; Lu, Toh-MingMicroelectronics and reliability, 2011-08, Vol.51 (8), p.1342-1345 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |
|
7 |
Material Type: Artigo
|
Polyimide nanostructures fabricated by nanoimprint lithography and its applicationsCui, Bo ; Cortot, Yann ; Veres, TeodorMicroelectronic engineering, 2006-04, Vol.83 (4), p.906-909 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
|
8 |
Material Type: Artigo
|
Room temperature nano- and microstructure photon detectorsPerera, A.G.U. ; Jayaweera, P.V.V. ; Ariyawansa, G. ; Matsik, S.G. ; Tennakone, K. ; Buchanan, M. ; Liu, H.C. ; Su, X.H. ; Bhattacharya, P.Microelectronics, 2009-03, Vol.40 (3), p.507-511 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
|
9 |
Material Type: Artigo
|
STI process steps for sub-quarter micron CMOSSallagoity, P ; Gaillard, F ; Rivoire, M ; Paoli, M ; Haond, M ; McClathie, SMicroelectronics and reliability, 1998-02, Vol.38 (2), p.271-276 [Periódico revisado por pares]Oxford: Elsevier LtdTexto completo disponível |
|
10 |
Material Type: Artigo
|
A fully analytical partitioned-charge-based model for linearly-graded SiGe-base heterojunction bipolar transistorsKuo, J.B. ; Lu, T.C.Solid-state electronics, 1994-08, Vol.37 (8), p.1561-1566 [Periódico revisado por pares]Oxford: Elsevier LtdTexto completo disponível |