Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Impact ionization induced dynamic floating body effect in junctionless transistorsYu, R. ; Nazarov, A.N. ; Lysenko, V.S. ; Das, S. ; Ferain, I. ; Razavi, P. ; Shayesteh, M. ; Kranti, A. ; Duffy, R. ; Colinge, J.-P.Solid-state electronics, 2013-12, Vol.90, p.28-33 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |
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2 |
Material Type: Livro
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Semiconductor-On-Insulator Materials for Nanoelectronics ApplicationsLysenko, V. S ; Balestra, Francis ; Colinge, J.-P ; Gamiz, Francisco ; Nazarov, Alexei ; Raskin, Jean-Pierre Nazarov, Alexei ; Balestra, Francis ; Raskin, Jean-Pierre ; Colinge, J.-P ; Balestra, Francis ; Colinge, J.-P. ; Raskin, Jean-Pierre ; Nazarov, Alexei ; Gamiz, Francisco ; Lysenko, V.S.Berlin, Heidelberg: Springer Nature 2011Sem texto completo |
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3 |
Material Type: Artigo
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Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodesNAZAROV, A. N ; OSIYUK, I. N ; SUN, J. M ; YANKOV, R. A ; SKORUPA, W ; TYAGULSKII, I. P ; LYSENKO, V. S ; PRUCNAL, S ; GEBEL, T ; REBOHLE, LApplied physics. B, Lasers and optics, 2007-03, Vol.87 (1), p.129-134 [Periódico revisado por pares]Berlin: SpringerTexto completo disponível |
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4 |
Material Type: Artigo
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Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxidesRudenko, T. ; Kilchytska, V. ; Burignat, S. ; Raskin, J.-P. ; Andrieu, F. ; Faynot, O. ; Le Tiec, Y. ; Landry, K. ; Nazarov, A. ; Lysenko, V.S. ; Flandre, D.Solid-state electronics, 2010-02, Vol.54 (2), p.164-170 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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5 |
Material Type: Artigo
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Charge storage peculiarities in poly-Si-SiO2-Si memory devices with Si nanocrystals rich SiO2TURCHANIKOV, V. I ; NAZAROV, A. N ; LYSENKO, V. S ; CARRERAS, Josep ; GARRIDO, BMicroelectronics and reliability, 2005-05, Vol.45 (5-6), p.903-906 [Periódico revisado por pares]Oxford: ElsevierTexto completo disponível |
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6 |
Material Type: Artigo
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Association of high-temperature kink-effect in SIMOX SOI fully depleted n-MOSFET with bias temperature instability of buried oxideNazarov, A.N. ; Barchuk, I.P. ; Lysenko, V.S. ; Colinge, J.-P.Microelectronic engineering, 1999, Vol.48 (1), p.379-382 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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Charge trapping characterization of MOCVD HfO2/p-Si interfaces at cryogenic temperaturesTYAGULSKYY, I. P ; OSIYUK, I. N ; LYSENKO, V. S ; NAZAROV, A. N ; HALL, S ; BUIU, O ; LU, Y ; POTTER, R ; CHALKER, PMicroelectronics and reliability, 2007-04, Vol.47 (4-5), p.726-728 [Periódico revisado por pares]Oxford: ElsevierTexto completo disponível |
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8 |
Material Type: Artigo
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Electrical characterization of the amorphous SiC-pSi structureLysenko, V.S. ; Tyagulski, I.P. ; Gomeniuk, Y.V. ; Osiyuk, I.N. ; Mikhnov, A.K.Microelectronic engineering, 1999, Vol.48 (1), p.265-268 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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9 |
Material Type: Artigo
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Charge trapping and interface states in hydrogen annealed HfO2-Si structuresGOMENIUK, Y. V ; NAZAROV, A. N ; VOVK, Ya. N ; LYSENKO, V. S ; YI LU ; BUIU, O ; HALL, S ; POTTER, R. J ; CHALKER, PMicroelectronics and reliability, 2007-04, Vol.47 (4-5), p.714-717 [Periódico revisado por pares]Oxford: ElsevierTexto completo disponível |
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10 |
Material Type: Artigo
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EPR and TSCR investigations of implanted AlSiO2Si systems treated with RF plasma dischargeLysenko, V. S. ; Nazarov, A. N. ; Valiev, S. A. ; Zaritskii, I. M. ; Rudenko, T. E. ; Tkachenko, A. S.Physica status solidi. A, Applied research, 1989-06, Vol.113 (2), p.653-665Berlin: WILEY-VCH VerlagTexto completo disponível |