Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Multi-petahertz electronic metrologyGarg, M ; Zhan, M ; Luu, T T ; Lakhotia, H ; Klostermann, T ; Guggenmos, A ; Goulielmakis, ENature (London), 2016-10, Vol.538 (7625), p.359-363 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
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2 |
Material Type: Artigo
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Approaching the intrinsic exciton physics limit in two-dimensional semiconductor diodesChen, Peng ; Atallah, Timothy L ; Lin, Zhaoyang ; Wang, Peiqi ; Lee, Sung-Joon ; Xu, Junqing ; Huang, Zhihong ; Duan, Xidong ; Ping, Yuan ; Huang, Yu ; Caram, Justin R ; Duan, XiangfengNature (London), 2021-11, Vol.599 (7885), p.404-410 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
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3 |
Material Type: Artigo
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Diode fibres for fabric-based optical communicationsRein, Michael ; Favrod, Valentine Dominique ; Hou, Chong ; Khudiyev, Tural ; Stolyarov, Alexander ; Cox, Jason ; Chung, Chia-Chun ; Chhav, Chhea ; Ellis, Marty ; Joannopoulos, John ; Fink, YoelNature (London), 2018-08, Vol.560 (7717), p.214-218 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
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4 |
Material Type: Artigo
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Coherence-selectable operation of external-cavity semiconductor diode laser by intracavity polarisation controlHyodo, M ; Kawakami, A ; Saito, S ; Watanabe, M ; Adachi, MElectronics letters, 2015-04, Vol.51 (7), p.574-575 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
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5 |
Material Type: Artigo
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An All-Silicon Passive Optical DiodeFan, Li ; Wang, Jian ; Varghese, Leo T. ; Shen, Hao ; Niu, Ben ; Xuan, Yi ; Weiner, Andrew M. ; Qi, MinghaoScience (American Association for the Advancement of Science), 2012-01, Vol.335 (6067), p.447-450 [Periódico revisado por pares]Washington, DC: American Association for the Advancement of ScienceTexto completo disponível |
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6 |
Material Type: Artigo
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High voltage and high current density vertical GaN power diodesArmstrong, A.M ; Allerman, A.A ; Fischer, A.J ; King, M.P ; van Heukelom, M.S ; Moseley, M.W ; Kaplar, R.J ; Wierer, J.J ; Crawford, M.H ; Dickerson, J.RElectronics letters, 2016-06, Vol.52 (13), p.1170-1171 [Periódico revisado por pares]United States: The Institution of Engineering and TechnologyTexto completo disponível |
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7 |
Material Type: Artigo
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Improvement of conversion efficiency for solar cell with metal–oxide-semiconductor diodeMatsuo, N ; Kobayashi, T ; Heya, AElectronics letters, 2013-10, Vol.49 (21), p.1351-1353 [Periódico revisado por pares]Stevenage: The Institution of Engineering and TechnologyTexto completo disponível |
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8 |
Material Type: Artigo
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Ratcheting quasi-ballistic electrons in silicon geometric diodes at room temperatureCuster, Jr, James P ; Low, Jeremy D ; Hill, David J ; Teitsworth, Taylor S ; Christesen, Joseph D ; McKinney, Collin J ; McBride, James R ; Brooke, Martin A ; Warren, Scott C ; Cahoon, James FScience (American Association for the Advancement of Science), 2020-04, Vol.368 (6487), p.177-180 [Periódico revisado por pares]United States: The American Association for the Advancement of ScienceTexto completo disponível |
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9 |
Material Type: Artigo
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Wavelength‐stabilized ns‐pulsed 2.2 kW diode laser bar with multiple active regions and tunnel junctionsAmmouri, Nor ; Christopher, Heike ; Fricke, Jörg ; Ginolas, Arnim ; Liero, Armin ; Maaßdorf, Andre ; Wenzel, Hans ; Knigge, AndreaElectronics Letters, 2023-01, Vol.59 (1), p.n/a [Periódico revisado por pares]John Wiley & Sons, IncTexto completo disponível |
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10 |
Material Type: Artigo
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Methodical Error in Measuring Nonlinear CapacitySergeev, V. A. ; Frolov, I. V.Measurement techniques, 2014-06, Vol.57 (3), p.353-359 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |