Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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The Driving Conditions for Obtaining Subnanosecond High-Voltage Pulses From a Silicon-Avalanche-Shaper DiodeMerensky, Lev M. ; Kardo-Sysoev, Alexei F. ; Shmilovitz, Doron ; Kesar, Amit S.IEEE transactions on plasma science, 2014-12, Vol.42 (12), p.4015-4019 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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Planar edge termination design and technology considerations for 1.7-kV 4H-SiC PiN diodesPerez, R. ; Tournier, D. ; Perez-Tomas, A. ; Godignon, P. ; Mestres, N. ; Millan, J.IEEE transactions on electron devices, 2005-10, Vol.52 (10), p.2309-2316 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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3 |
Material Type: Artigo
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Continuous Wave Spectroscopic Terahertz Imaging With InGaAs Bow-Tie Diodes at Room TemperatureKasalynas, I. ; Venckevicius, R. ; Valusis, G.IEEE sensors journal, 2013-01, Vol.13 (1), p.50-54 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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4 |
Material Type: Artigo
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Coherence-selectable operation of external-cavity semiconductor diode laser by intracavity polarisation controlHyodo, M ; Kawakami, A ; Saito, S ; Watanabe, M ; Adachi, MElectronics letters, 2015-04, Vol.51 (7), p.574-575 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
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5 |
Material Type: Artigo
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Super Barrier Rectifier-A New Generation of Power DiodeRodov, V. ; Ankoudinov, A.L. ; TaufikIEEE transactions on industry applications, 2008-01, Vol.44 (1), p.234-237 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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6 |
Material Type: Artigo
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An All-Silicon Passive Optical DiodeFan, Li ; Wang, Jian ; Varghese, Leo T. ; Shen, Hao ; Niu, Ben ; Xuan, Yi ; Weiner, Andrew M. ; Qi, MinghaoScience (American Association for the Advancement of Science), 2012-01, Vol.335 (6067), p.447-450 [Periódico revisado por pares]Washington, DC: American Association for the Advancement of ScienceTexto completo disponível |
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7 |
Material Type: Artigo
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High voltage and high current density vertical GaN power diodesArmstrong, A.M ; Allerman, A.A ; Fischer, A.J ; King, M.P ; van Heukelom, M.S ; Moseley, M.W ; Kaplar, R.J ; Wierer, J.J ; Crawford, M.H ; Dickerson, J.RElectronics letters, 2016-06, Vol.52 (13), p.1170-1171 [Periódico revisado por pares]United States: The Institution of Engineering and TechnologyTexto completo disponível |
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8 |
Material Type: Artigo
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Improvement of conversion efficiency for solar cell with metal–oxide-semiconductor diodeMatsuo, N ; Kobayashi, T ; Heya, AElectronics letters, 2013-10, Vol.49 (21), p.1351-1353 [Periódico revisado por pares]Stevenage: The Institution of Engineering and TechnologyTexto completo disponível |
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9 |
Material Type: Artigo
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Integrated Silicon Directly Modulated Light Source Using p-Well in Standard CMOS TechnologyXu, KaikaiIEEE sensors journal, 2016-08, Vol.16 (16), p.6184-6191 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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10 |
Material Type: Artigo
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Radio-Frequency Rectifier for Electromagnetic Energy Harvesting: Development Path and Future OutlookHemour, Simon ; Wu, KeProceedings of the IEEE, 2014-11, Vol.102 (11), p.1667-1691 [Periódico revisado por pares]New York: IEEETexto completo disponível |