Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Planar edge termination design and technology considerations for 1.7-kV 4H-SiC PiN diodesPerez, R. ; Tournier, D. ; Perez-Tomas, A. ; Godignon, P. ; Mestres, N. ; Millan, J.IEEE transactions on electron devices, 2005-10, Vol.52 (10), p.2309-2316 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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Continuous Wave Spectroscopic Terahertz Imaging With InGaAs Bow-Tie Diodes at Room TemperatureKasalynas, I. ; Venckevicius, R. ; Valusis, G.IEEE sensors journal, 2013-01, Vol.13 (1), p.50-54 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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3 |
Material Type: Artigo
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Super Barrier Rectifier-A New Generation of Power DiodeRodov, V. ; Ankoudinov, A.L. ; TaufikIEEE transactions on industry applications, 2008-01, Vol.44 (1), p.234-237 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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4 |
Material Type: Artigo
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High voltage and high current density vertical GaN power diodesArmstrong, A.M ; Allerman, A.A ; Fischer, A.J ; King, M.P ; van Heukelom, M.S ; Moseley, M.W ; Kaplar, R.J ; Wierer, J.J ; Crawford, M.H ; Dickerson, J.RElectronics letters, 2016-06, Vol.52 (13), p.1170-1171 [Periódico revisado por pares]United States: The Institution of Engineering and TechnologyTexto completo disponível |
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5 |
Material Type: Artigo
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Improvement of conversion efficiency for solar cell with metal–oxide-semiconductor diodeMatsuo, N ; Kobayashi, T ; Heya, AElectronics letters, 2013-10, Vol.49 (21), p.1351-1353 [Periódico revisado por pares]Stevenage: The Institution of Engineering and TechnologyTexto completo disponível |
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6 |
Material Type: Artigo
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Integrated Silicon Directly Modulated Light Source Using p-Well in Standard CMOS TechnologyXu, KaikaiIEEE sensors journal, 2016-08, Vol.16 (16), p.6184-6191 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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7 |
Material Type: Artigo
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Research and analysis of voids in semiconductor laser diode packaging reflow solderingXu, Peidong ; Qian, Yang ; Wang, Bin ; Wang, Yong ; Yue, Yuxin ; Teng, Yunjie ; Wang, XiantaoMicrowave and optical technology letters, 2023-05, Vol.65 (5), p.1339-1345 [Periódico revisado por pares]New York: Wiley Subscription Services, IncTexto completo disponível |
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8 |
Material Type: Artigo
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Radio-Frequency Rectifier for Electromagnetic Energy Harvesting: Development Path and Future OutlookHemour, Simon ; Wu, KeProceedings of the IEEE, 2014-11, Vol.102 (11), p.1667-1691 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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9 |
Material Type: Artigo
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Fabrication and Characterization of the Charge-Plasma DiodeRajasekharan, Bijoy ; Hueting, Raymond J E ; Salm, Cora ; van Hemert, Tom ; Wolters, Rob A M ; Schmitz, JurriaanIEEE electron device letters, 2010-06, Vol.31 (6), p.528-530 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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10 |
Material Type: Artigo
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Vertical GaN Power Diodes With a Bilayer Edge TerminationDickerson, Jeramy R. ; Allerman, Andrew A. ; Bryant, Benjamin N. ; Fischer, Arthur J. ; King, Michael P. ; Moseley, Michael W. ; Armstrong, Andrew M. ; Kaplar, Robert J. ; Kizilyalli, Isik C. ; Aktas, Ozgur ; Wierer, Jonathan J.IEEE transactions on electron devices, 2016-01, Vol.63 (1), p.419-425 [Periódico revisado por pares]New York: IEEETexto completo disponível |