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1
A study on electrical properties of Au/4H-SiC Schottky diode under illumination
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A study on electrical properties of Au/4H-SiC Schottky diode under illumination

Yıldız, D. E. ; Karadeniz, S. ; Gullu, H. H.

Journal of materials science. Materials in electronics, 2021-08, Vol.32 (15), p.20130-20138 [Periódico revisado por pares]

New York: Springer US

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Interface controlling study of silicon based Schottky diode by organic layer
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Interface controlling study of silicon based Schottky diode by organic layer

Gencer Imer, Arife ; Korkut, A. ; Farooq, W. A. ; Dere, A. ; Atif, M. ; Hanif, Atif ; Karabulut, Abdulkerim

Journal of materials science. Materials in electronics, 2019-11, Vol.30 (21), p.19239-19246 [Periódico revisado por pares]

New York: Springer US

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3
The synthesis of 4,4′-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode
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The synthesis of 4,4′-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode

Yıldırım, M. ; Erdoğan, A. ; Yüksel, Ö. F. ; Kuş, M. ; Can, M. ; Akın, Ü. ; Tuğluoğlu, N.

Journal of materials science. Materials in electronics, 2019-06, Vol.30 (11), p.10408-10418 [Periódico revisado por pares]

New York: Springer US

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4
Temperature dependent electronic transport properties of heterojunctions formed between perovskite SrTiO3 nanocubes and silicon
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Temperature dependent electronic transport properties of heterojunctions formed between perovskite SrTiO3 nanocubes and silicon

Taşyürek, Lütfi Bilal ; Aydoğan, Şakir ; Sevim, Melike ; Çaldıran, Zakir

Journal of materials science. Materials in electronics, 2020-12, Vol.31 (23), p.20833-20846 [Periódico revisado por pares]

New York: Springer US

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5
Required theoretical and experimental physical characteristics of tris[4-(diethylamino)phenyl] amine organic material
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Required theoretical and experimental physical characteristics of tris[4-(diethylamino)phenyl] amine organic material

Tanış, Emine ; Babur Sas, Emine ; Gündüz, Bayram ; Kurt, Mustafa

Journal of materials science. Materials in electronics, 2018-09, Vol.29 (18), p.16111-16119 [Periódico revisado por pares]

New York: Springer US

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6
Fabrication of upconversion emissive LaOCl phosphors doped with rare-earth ions for bioimaging probes
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Fabrication of upconversion emissive LaOCl phosphors doped with rare-earth ions for bioimaging probes

KONISHI, Tomoya ; SHIMIZU, Masahiro ; KAMEYAMA, Yuji ; SOGA, Kohei

Journal of materials science. Materials in electronics, 2007-10, Vol.18 (S1), p.183-186 [Periódico revisado por pares]

Norwell, MA: Springer

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7
Degradation model analysis of laser diodes
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Degradation model analysis of laser diodes

Häusler, K. ; Zeimer, U. ; Sumpf, B. ; Erbert, G. ; Tränkle, G.

Journal of materials science. Materials in electronics, 2008-12, Vol.19 (Suppl 1), p.160-164 [Periódico revisado por pares]

Boston: Springer US

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8
Coupling characteristics of laser diodes to high numerical aperture thermally expanded core fibers
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Coupling characteristics of laser diodes to high numerical aperture thermally expanded core fibers

Kliros, George S. ; Divari, Paraskevi C.

Journal of materials science. Materials in electronics, 2009, Vol.20 (Suppl 1), p.59-62 [Periódico revisado por pares]

Boston: Springer US

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9
Cathodoluminescence study of GaN-based film structures
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Cathodoluminescence study of GaN-based film structures

Jiang, D. S. ; Jahn, U. ; Chen, J. ; Li, D. Y. ; Zhang, S. M. ; Zhu, J. J. ; Zhao, D. G. ; Liu, Z. S. ; Yang, H. ; Ploog, K.

Journal of materials science. Materials in electronics, 2008-12, Vol.19 (Suppl 1), p.58-63 [Periódico revisado por pares]

Boston: Springer US

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10
Temperature insensitive quantum dot lasers: are we really there yet?
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Temperature insensitive quantum dot lasers: are we really there yet?

Massé, N. F. ; Marko, I. P. ; Adams, A. R. ; Sweeney, S. J.

Journal of materials science. Materials in electronics, 2009, Vol.20 (Suppl 1), p.272-276 [Periódico revisado por pares]

Boston: Springer US

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