Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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Material Type: Artigo
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Indirect Thermographic Temperature Measurement of a Power-Rectifying Diode DieDziarski, Krzysztof ; Hulewicz, Arkadiusz ; Dombek, Grzegorz ; Drużyński, ŁukaszEnergies (Basel), 2022-05, Vol.15 (9), p.3203 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
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2 |
Material Type: Artigo
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Design and development of an AlGaN/GaN heterostructure nano-ATT oscillator: experimental feasibility studies in THz domainChakraborty, Debraj ; Maity, Biswajit ; Mukherjee, MoumitaMicro & nano letters, 2020-01, Vol.15 (1), p.41-46 [Periódico revisado por pares]Stevenage: The Institution of Engineering and TechnologyTexto completo disponível |
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3 |
Material Type: Artigo
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Recent Progress of Electrically Pumped AlGaN Diode Lasers in the UV-B and -C BandsHasan, Syed M. N. ; You, Weicheng ; Sumon, Md Saiful Islam ; Arafin, ShamsulPhotonics, 2021-07, Vol.8 (7), p.267 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
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4 |
Material Type: Artigo
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High-Performance Multifunctional Photodetector and THz Modulator Based on Graphene/TiO2/p-Si HeterojunctionWei, Miaoqing ; Zhang, Dainan ; Zhang, Lei ; Jin, Lichuan ; Zhang, HuaiwuNanoscale research letters, 2021-08, Vol.16 (1), p.134-134, Article 134 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
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5 |
Material Type: Artigo
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Fabricating Graphene Oxide/h-BN Metal Insulator Semiconductor Diodes by Nanosecond Laser IrradiationGupta, Siddharth ; Joshi, Pratik ; Sachan, Ritesh ; Narayan, JagdishNanomaterials (Basel, Switzerland), 2022-08, Vol.12 (15), p.2718 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
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6 |
Material Type: Artigo
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Spectral Output of Homogeneously Broadened Semiconductor LasersCassidy, Daniel T.Photonics, 2021-08, Vol.8 (8), p.340 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
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7 |
Material Type: Artigo
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Time-Dependent Charge Carrier Transport with Hall Effect in Organic Semiconductors for Langevin and Non-Langevin SystemsMorab, Seema ; Sundaram, Manickam Minakshi ; Pivrikas, AlmantasNanomaterials (Basel, Switzerland), 2022-12, Vol.12 (24), p.4414 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
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8 |
Material Type: Artigo
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Simulation study of high-reverse blocking AlGaN/GaN power rectifier with an integrated lateral composite buffer diodeWang, Zeheng ; Wang, Fangzhou ; Guo, Songnan ; Wang, ZiruiMicro & nano letters, 2017-09, Vol.12 (9), p.660-663 [Periódico revisado por pares]Stevenage: The Institution of Engineering and TechnologyTexto completo disponível |
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9 |
Material Type: Artigo
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A Comparison between off and On-Chip Injection Locking in a Photonic Integrated CircuitPerrott, Alison ; Caro, Ludovic ; Dernaika, Mohamad ; Peters, FrankPhotonics, 2019-10, Vol.6 (4), p.103 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
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10 |
Material Type: Artigo
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Aging Effect Analysis of PV Inverter Semiconductors for Ancillary Services SupportLiu, Yunting ; Tolbert, Leon M. ; Kritprajun, Paychuda ; Dong, Jiaojiao ; Zhu, Lin ; Hambrick, Joshua ; Schneider, Kevin P. ; Prabakar, KumaraguruIEEE open journal of industry applications, 2020-01, Vol.1 (1), p.157-170 [Periódico revisado por pares]New York: IEEETexto completo disponível |