Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Simulation of carrier transport and nonlinearities in quantum-well laser diodesGrupen, M. ; Hess, K.IEEE journal of quantum electronics, 1998-01, Vol.34 (1), p.120-140 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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Design and Implementation of a Unity Power Factor Fuzzy Battery Charger using an Ultrasparse Matrix RectifierMetidji, R. ; Metidji, B. ; Mendil, B.IEEE transactions on power electronics, 2013-05, Vol.28 (5), p.2269-2276 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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3 |
Material Type: Artigo
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Class-D Zero-Current-Switching Rectifier as Power-Factor Corrector for Lighting ApplicationsEkkaravarodome, Chainarin ; Chunkag, Viboon ; Jirasereeamornkul, Kamon ; Kazimierczuk, Marian K.IEEE transactions on power electronics, 2014-09, Vol.29 (9), p.4938-4948 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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4 |
Material Type: Artigo
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Transient thermal analysis of semiconductor diode lasers under pulsed operationVeerabathran, G. K. ; Sprengel, S. ; Karl, S. ; Andrejew, A. ; Schmeiduch, H. ; Amann, M.-C.AIP advances, 2017-02, Vol.7 (2), p.025208-025208-11 [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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5 |
Material Type: Artigo
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A Hybrid Integrated Light Source on a Silicon Platform Using a Trident Spot-Size ConverterHatori, Nobuaki ; Shimizu, Takanori ; Okano, Makoto ; Ishizaka, Masashige ; Yamamoto, Tsuyoshi ; Urino, Yutaka ; Mori, Masahiko ; Nakamura, Takahiro ; Arakawa, YasuhikoJournal of lightwave technology, 2014-04, Vol.32 (7), p.1329-1336 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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6 |
Material Type: Artigo
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Structure and corrosion resistance properties of Ni–Fe–B–Si–Nb amorphous composite coatings fabricated by laser processingLi, Ruifeng ; Li, Zhuguo ; Zhu, Yanyan ; Qi, KaiJournal of alloys and compounds, 2013-12, Vol.580, p.327-331 [Periódico revisado por pares]Kidlington: Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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Measurement of the Intrinsic Parameters of Single-Mode VCSELsPerez, P. ; Valle, A. ; Noriega, I. ; Pesquera, L.Journal of lightwave technology, 2014-04, Vol.32 (8), p.1601-1607 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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8 |
Material Type: Artigo
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Analysis and characterization of the hyperchaos generated by a semiconductor laser subject to a delayed feedback loopVicente, R. ; Dauden, J. ; Colet, P. ; Toral, R.IEEE journal of quantum electronics, 2005-04, Vol.41 (4), p.541-548 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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9 |
Material Type: Artigo
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Theoretical gain of strained-layer semiconductor lasers in the large strain regimeChong, T.C. ; Fonstad, C.G.IEEE J. Quant. Electron.; (United States), 1989-02, Vol.25 (2), p.171-178 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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10 |
Material Type: Artigo
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Comparison of Intersymbol Interference Power Penalties for OOK and 4-PAM in Short-Range Optical LinksSzczerba, Krzysztof ; Westbergh, Petter ; Agrell, Erik ; Karlsson, Magnus ; Andrekson, Peter A. ; Larsson, AndersJournal of lightwave technology, 2013-11, Vol.31 (22), p.3525-3534 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |