Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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A GaAs polariton light-emitting diode operating near room temperatureSavvidis, P. G ; Tsintzos, S. I ; Pelekanos, N. T ; Konstantinidis, G ; Hatzopoulos, ZNature (London), 2008-05, Vol.453 (7193), p.372-375 [Periódico revisado por pares]London: Nature PublishingTexto completo disponível |
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2 |
Material Type: Livro
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Compound Semiconductors 1998: Proceedings of the Twenty-Fifth International Symposium on Compound Semiconductors held in Nara, Japan, 12-16 October 1998Sakaki, H ; Woo, J. C ; Yokoyama, N ; Harayama, Y Yokoyama, N ; Sakaki, H ; Hirayama, Y ; Woo, J-CMilton: Institute of Physics Publishing 1999Sem texto completo |
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3 |
Material Type: Livro
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Semiconductors and SemimetalsWillardson, R. K ; Beer, Albert CSan Diego: Elsevier Science & Technology 1981Texto completo disponível |
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4 |
Material Type: Tese
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Thesis on Gallium arsenide Schottky diodeLeung, Cynthia1988Sem texto completo |
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5 |
Material Type: Tese
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Reliability studies on Palladium, platinum, and ruthenium Schottky contacts to n-type GaAs / Hemlata ShardaSharda, Hemlata1991Sem texto completo |
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6 |
Material Type: Tese
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An avalanche electron emitting diode in gallium arsenideZutphen, Tom vanDelft, Netherlands: Technische Universiteit Delft 1990Sem texto completo |
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7 |
Material Type: Tese
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Thesis on Gallium arsenide Schottky diodeLeung, Cynthia1988Sem texto completo |
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8 |
Material Type: magazinearticle
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Dual 180-v GaAs Schottky diode rectifies 10 A/legGoodenough, FrankElectronic design, 1994-08, Vol.42 (16), p.47Endeavor Business MediaTexto completo disponível |
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9 |
Material Type: magazinearticle
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Differentiating between CMOS, Pin-Diode, and GaAs SwitchesMicrowaves & RF, 2006-10, Vol.45 (10), p.100-100Nashville: Endeavor Business MediaTexto completo disponível |