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Refinado por: Base de dados/Biblioteca: Engineered Materials Abstracts remover Nome da Publicação: Journal Of Crystal Growth remover
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1
Nanoharvesting of GaN nanowires on Si (211) substrates by plasma-assisted molecular beam epitaxy
Nanoharvesting of GaN nanowires on Si (211) substrates by plasma-assisted molecular beam epitaxy
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Nanoharvesting of GaN nanowires on Si (211) substrates by plasma-assisted molecular beam epitaxy

Agrawal, Mansi ; Jain, Anubha ; Sridhara Rao, D.V. ; Pandey, Akhilesh ; Goyal, Anshu ; Kumar, Anand ; Lamba, Sushil ; Mehta, B.R. ; Muraleedharan, K. ; Muralidharan, R.

Journal of crystal growth, 2014-09, Vol.402, p.37-41 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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2
CdSe quantum dots in ZnSe nanowires as efficient source for single photons up to 220 K
CdSe quantum dots in ZnSe nanowires as efficient source for single photons up to 220 K
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CdSe quantum dots in ZnSe nanowires as efficient source for single photons up to 220 K

Aichele, Thomas ; Tribu, Adrien ; Sallen, Gregory ; Bocquel, Juanita ; Bellet-Amalric, Edith ; Bougerol, Catherine ; Poizat, Jean-Philippe ; Kheng, Kuntheak ; André, Régis ; Tatarenko, Serge ; Mariette, Henri

Journal of crystal growth, 2009-03, Vol.311 (7), p.2123-2127 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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3
An ab initio study for the formation of two-dimensional III-nitride compound ultrathin films: Effects of Ag(1 1 1) substrate
An ab initio study for the formation of two-dimensional III-nitride compound ultrathin films: Effects of Ag(1 1 1) substrate
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An ab initio study for the formation of two-dimensional III-nitride compound ultrathin films: Effects of Ag(1 1 1) substrate

Akiyama, Toru ; Tsuboi, Yuma ; Nakamura, Kohji ; Ito, Tomonori

Journal of crystal growth, 2019-04, Vol.511, p.89-92 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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4
Characterization and Raman investigations on high-quality ZnO thin films fabricated by reactive electron beam evaporation technique
Characterization and Raman investigations on high-quality ZnO thin films fabricated by reactive electron beam evaporation technique
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Characterization and Raman investigations on high-quality ZnO thin films fabricated by reactive electron beam evaporation technique

Al Asmar, R. ; Atanas, J.P. ; Ajaka, M. ; Zaatar, Y. ; Ferblantier, G. ; Sauvajol, J.L. ; Jabbour, J. ; Juillaget, S. ; Foucaran, A.

Journal of crystal growth, 2005-06, Vol.279 (3), p.394-402 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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5
Growth of high Mg content wurtzite MgZnO epitaxial films via pulsed metal organic chemical vapor deposition
Growth of high Mg content wurtzite MgZnO epitaxial films via pulsed metal organic chemical vapor deposition
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Growth of high Mg content wurtzite MgZnO epitaxial films via pulsed metal organic chemical vapor deposition

Alema, Fikadu ; Ledyaev, Oleg ; Miller, Ross ; Beletsky, Valeria ; Osinsky, Andrei ; Schoenfeld, Winston V.

Journal of crystal growth, 2016-02, Vol.435, p.6-11 [Periódico revisado por pares]

Elsevier B.V

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6
The influence of N sub(2)/H sub(2) and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
The influence of N sub(2)/H sub(2) and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
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The influence of N sub(2)/H sub(2) and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition

Alevli, Mustafa ; Ozgit, Cagla ; Donmez, Inci ; Biyikli, Necmi

Journal of crystal growth, 2011-11, Vol.335 (1), p.51-57 [Periódico revisado por pares]

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7
Effect of substrate orientation on CdS homoepitaxy by molecular dynamics
Effect of substrate orientation on CdS homoepitaxy by molecular dynamics
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Effect of substrate orientation on CdS homoepitaxy by molecular dynamics

Almeida, S. ; Chavez, J.J. ; Zhou, X.W. ; Zubia, D.

Journal of crystal growth, 2016-05, Vol.441 (C), p.89-94 [Periódico revisado por pares]

United States: Elsevier B.V

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8
Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio
Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio
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Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio

Anandan, Deepak ; Nagarajan, Venkatesan ; Kakkerla, Ramesh Kumar ; Yu, Hung Wei ; Ko, Hua Lun ; Singh, Sankalp Kumar ; Lee, Ching Ting ; Chang, Edward Yi

Journal of crystal growth, 2019-09, Vol.522, p.30-36 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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9
Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy
Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy
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Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy

Aseev, P. ; Gačević, Ž. ; Mánuel, J.M. ; Jiménez, J.J. ; García, R. ; Morales, F.M. ; Calleja, E.

Journal of crystal growth, 2018-07, Vol.493, p.65-75 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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10
Low temperature photoluminescence and Raman phonon modes of Au-catalyzed MBE-grown GaAs–AlGaAs core–shell nanowires grown on a pre-patterned Si (1 1 1) substrate
Low temperature photoluminescence and Raman phonon modes of Au-catalyzed MBE-grown GaAs–AlGaAs core–shell nanowires grown on a pre-patterned Si (1 1 1) substrate
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Low temperature photoluminescence and Raman phonon modes of Au-catalyzed MBE-grown GaAs–AlGaAs core–shell nanowires grown on a pre-patterned Si (1 1 1) substrate

Bailon-Somintac, Michelle F. ; Ibañez, Jasher J. ; Jaculbia, Rafael B. ; Loberternos, Regine A. ; Defensor, Michael J. ; Salvador, Arnel A. ; Somintac, Armando S.

Journal of crystal growth, 2011, Vol.314 (1), p.268-273 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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