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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
Material Type: Artigo
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Anomalous Zero-Bias Conductance Peak in a Nb–InSb Nanowire–Nb Hybrid DeviceDeng, M. T ; Yu, C. L ; Huang, G. Y ; Larsson, M ; Caroff, P ; Xu, H. QNano letters, 2012-12, Vol.12 (12), p.6414-6419 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
| 2 |
Material Type: Artigo
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Steady state and transient thermal stress analysis in planar solid oxide fuel cellsSelimovic, Azra ; Kemm, Miriam ; Torisson, Tord ; Assadi, MohsenJournal of power sources, 2005-08, Vol.145 (2), p.463-469 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
| 3 |
Material Type: Artigo
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Determination of the Bending Rigidity of Graphene via Electrostatic Actuation of Buckled MembranesLindahl, Niklas ; Midtvedt, Daniel ; Svensson, Johannes ; Nerushev, Oleg A ; Lindvall, Niclas ; Isacsson, Andreas ; Campbell, Eleanor E. BNano letters, 2012-07, Vol.12 (7), p.3526-3531 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
| 4 |
Material Type: Artigo
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SOFC modeling considering hydrogen and carbon monoxide as electrochemical reactantsAndersson, Martin ; Yuan, Jinliang ; Sundén, BengtJournal of power sources, 2013-06, Vol.232, p.42-54 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
| 5 |
Material Type: Artigo
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Quantum Dot-Based Local Field Imaging Reveals Plasmon-Based Interferometric Logic in Silver Nanowire NetworksWei, Hong ; Li, Zhipeng ; Tian, Xiaorui ; Wang, Zhuoxian ; Cong, Fengzi ; Liu, Ning ; Zhang, Shunping ; Nordlander, Peter ; Halas, Naomi J ; Xu, HongxingNano letters, 2011-02, Vol.11 (2), p.471-475 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
| 6 |
Material Type: Artigo
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Movement speed and exit choice in smoke-filled rail tunnelsFridolf, Karl ; Ronchi, Enrico ; Nilsson, Daniel ; Frantzich, HåkanFire safety journal, 2013-07, Vol.59, p.8-21 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |
| 7 |
Material Type: Artigo
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Large Thermoelectric Power Factor Enhancement Observed in InAs NanowiresWu, Phillip M ; Gooth, Johannes ; Zianni, Xanthippi ; Svensson, Sofia Fahlvik ; Gluschke, Jan Göran ; Dick, Kimberly A ; Thelander, Claes ; Nielsch, Kornelius ; Linke, HeinerNano letters, 2013-09, Vol.13 (9), p.4080-4086 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
| 8 |
Material Type: Artigo
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High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect TransistorsDey, A. W. ; Borg, B. M. ; Ganjipour, B. ; Ek, M. ; Dick, K. A. ; Lind, E. ; Thelander, C. ; Wernersson, L.IEEE electron device letters, 2013-02, Vol.34 (2), p.211-213 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
| 9 |
Material Type: Artigo
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High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si SubstratesJohansson, Sofia ; Memisevic, Elvedin ; Wernersson, Lars-Erik ; Lind, ErikIEEE electron device letters, 2014-05, Vol.35 (5), p.518-520 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
| 10 |
Material Type: Artigo
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Giant, Level-Dependent g Factors in InSb Nanowire Quantum DotsNilsson, Henrik A ; Caroff, Philippe ; Thelander, Claes ; Larsson, Marcus ; Wagner, Jakob B ; Wernersson, Lars-Erik ; Samuelson, Lars ; Xu, H. QNano letters, 2009-09, Vol.9 (9), p.3151-3156 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
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