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Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation-Part I: CNFET Transistor Optimization
Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation-Part I: CNFET Transistor Optimization
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Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation-Part I: CNFET Transistor Optimization

Chen, Rongmei ; Chen, Lin ; Liang, Jie ; Cheng, Yuanqing ; Elloumi, Souhir ; Lee, Jaehyun ; Xu, Kangwei ; Georgiev, Vihar P. ; Ni, Kai ; Debacker, Peter ; Asenov, Asen ; Todri-Sanial, Aida

IEEE transactions on very large scale integration (VLSI) systems, 2022-04, Vol.30 (4), p.432-439 [Periódico revisado por pares]

New York: IEEE

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Comprehensive Analytical Modelling of an Absolute pH Sensor
Comprehensive Analytical Modelling of an Absolute pH Sensor
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Comprehensive Analytical Modelling of an Absolute pH Sensor

Medina-Bailon, Cristina ; Kumar, Naveen ; Dhar, Rakshita Pritam Singh ; Todorova, Ilina ; Lenoble, Damien ; Georgiev, Vihar P. ; García, César Pascual

Sensors (Basel, Switzerland), 2021-07, Vol.21 (15), p.5190 [Periódico revisado por pares]

Basel: MDPI AG

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Planar Junctionless Field-Effect Transistor for Detecting Biomolecular Interactions
Planar Junctionless Field-Effect Transistor for Detecting Biomolecular Interactions
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Planar Junctionless Field-Effect Transistor for Detecting Biomolecular Interactions

Shukla, Rajendra P. ; Bomer, J. G. ; Wijnperle, Daniel ; Kumar, Naveen ; Georgiev, Vihar P. ; Singh, Aruna Chandra ; Krishnamoorthy, Sivashankar ; Pascual García, César ; Pud, Sergii ; Olthuis, Wouter

Sensors (Basel, Switzerland), 2022-08, Vol.22 (15), p.5783 [Periódico revisado por pares]

Basel: MDPI AG

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Simulation Study of Surface Transfer Doping of Hydrogenated Diamond by MoO3 and V2O5 Metal Oxides
Simulation Study of Surface Transfer Doping of Hydrogenated Diamond by MoO3 and V2O5 Metal Oxides
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Simulation Study of Surface Transfer Doping of Hydrogenated Diamond by MoO3 and V2O5 Metal Oxides

McGhee, Joseph ; Georgiev, Vihar P.

Micromachines (Basel), 2020-04, Vol.11 (4), p.433 [Periódico revisado por pares]

MDPI

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Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework
Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework
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Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

Medina-Bailon, Cristina ; Dutta, Tapas ; Rezaei, Ali ; Nagy, Daniel ; Adamu-Lema, Fikru ; Georgiev, Vihar P. ; Asenov, Asen

Micromachines (Basel), 2021-06, Vol.12 (6), p.680 [Periódico revisado por pares]

Basel: MDPI AG

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Computational study of oxide stoichiometry and variability in the Al/AlOx/Al tunnel junction
Computational study of oxide stoichiometry and variability in the Al/AlOx/Al tunnel junction
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Computational study of oxide stoichiometry and variability in the Al/AlOx/Al tunnel junction

Lapham, Paul ; Georgiev, Vihar P

Nanotechnology, 2022-06, Vol.33 (26), p.265201 [Periódico revisado por pares]

England: IOP Publishing

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7
Influence of the Contact Geometry and Counterions on the Current Flow and Charge Transfer in Polyoxometalate Molecular Junctions: A Density Functional Theory Study
Influence of the Contact Geometry and Counterions on the Current Flow and Charge Transfer in Polyoxometalate Molecular Junctions: A Density Functional Theory Study
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Influence of the Contact Geometry and Counterions on the Current Flow and Charge Transfer in Polyoxometalate Molecular Junctions: A Density Functional Theory Study

Lapham, Paul ; Vilà-Nadal, Laia ; Cronin, Leroy ; Georgiev, Vihar P

Journal of physical chemistry. C, 2021-02, Vol.125 (6), p.3599-3610 [Periódico revisado por pares]

United States: American Chemical Society

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8
Impact of the Figures of Merit (FoMs) Definitions on the Variability in Nanowire TFET: NEGF Simulation Study
Impact of the Figures of Merit (FoMs) Definitions on the Variability in Nanowire TFET: NEGF Simulation Study
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Impact of the Figures of Merit (FoMs) Definitions on the Variability in Nanowire TFET: NEGF Simulation Study

Guan, Yunhe ; Georgiev, Vihar P. ; Asenov, Asen ; Liang, Feng ; Chen, Haifeng

IEEE transactions on electron devices, 2022-11, Vol.69 (11), p.6394-6399 [Periódico revisado por pares]

New York: IEEE

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9
Variability Predictions for the Next Technology Generations of n-type SixGe1−x Nanowire MOSFETs
Variability Predictions for the Next Technology Generations of n-type SixGe1−x Nanowire MOSFETs
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Variability Predictions for the Next Technology Generations of n-type SixGe1−x Nanowire MOSFETs

Lee, Jaehyun ; Badami, Oves ; Carrillo-Nuñez, Hamilton ; Berrada, Salim ; Medina-Bailon, Cristina ; Dutta, Tapas ; Adamu-Lema, Fikru ; Georgiev, Vihar ; Asenov, Asen

Micromachines (Basel), 2018-12, Vol.9 (12), p.643 [Periódico revisado por pares]

Basel: MDPI AG

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10
Quantum simulation investigation of work-function variation in nanowire tunnel FETs
Quantum simulation investigation of work-function variation in nanowire tunnel FETs
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Quantum simulation investigation of work-function variation in nanowire tunnel FETs

Guan, Yunhe ; Carrillo-Nuñez, Hamilton ; Georgiev, Vihar P ; Asenov, Asen ; Liang, Feng ; Li, Zunchao ; Chen, Haifeng

Nanotechnology, 2021-04, Vol.32 (15), p.150001-150001 [Periódico revisado por pares]

England: IOP Publishing

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