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Gallium nitride devices for power electronic applications
Gallium nitride devices for power electronic applications
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Gallium nitride devices for power electronic applications

Baliga, B Jayant

Semiconductor science and technology, 2013-07, Vol.28 (7), p.74011 [Periódico revisado por pares]

IOP Publishing

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Merits of gallium nitride based power conversion: Gallium nitride electronics
Merits of gallium nitride based power conversion: Gallium nitride electronics
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Merits of gallium nitride based power conversion: Gallium nitride electronics

SCOTT, Mark J ; LIXING FU ; XUAN ZHANG ; JINZHU LI ; CHENGCHENG YAO ; SIEVERS, Markus ; JIN WANG

Semiconductor science and technology, 2013, Vol.28 (7) [Periódico revisado por pares]

Bristol: Institute of Physics

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Gallium nitride devices for power electronic applications: Gallium nitride electronics
Gallium nitride devices for power electronic applications: Gallium nitride electronics
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Gallium nitride devices for power electronic applications: Gallium nitride electronics

JAYANT BALIGA, B

Semiconductor science and technology, 2013, Vol.28 (7) [Periódico revisado por pares]

Bristol: Institute of Physics

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4
A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications
A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications
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A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications

Rajbhandari, Sujan ; McKendry, Jonathan J D ; Herrnsdorf, Johannes ; Chun, Hyunchae ; Faulkner, Grahame ; Haas, Harald ; Watson, Ian M ; O'Brien, Dominic ; Dawson, Martin D

Semiconductor science and technology, 2017-01, Vol.32 (2), p.23001 [Periódico revisado por pares]

IOP Publishing

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5
Current status and scope of gallium nitride-based vertical transistors for high-power electronics application: Gallium nitride electronics
Current status and scope of gallium nitride-based vertical transistors for high-power electronics application: Gallium nitride electronics
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Current status and scope of gallium nitride-based vertical transistors for high-power electronics application: Gallium nitride electronics

CHOWDHURY, Srabanti ; SWENSON, Brian L ; MAN HOI WONG ; MISHRA, Umesh K

Semiconductor science and technology, 2013, Vol.28 (7) [Periódico revisado por pares]

Bristol: Institute of Physics

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6
Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursors
Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursors
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Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursors

Lund, Cory ; Nakamura, Shuji ; DenBaars, Steven P ; Mishra, Umesh K ; Keller, Stacia

Semiconductor science and technology, 2019-07, Vol.34 (7), p.75017 [Periódico revisado por pares]

IOP Publishing

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7
Gallium nitride electronics
Gallium nitride electronics
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Gallium nitride electronics

RAJAN, Siddharth ; JENA, Debdeep

Semiconductor science and technology, 2013-07, Vol.28 (7), p.70301 [Periódico revisado por pares]

Bristol: Institute of Physics

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8
Merits of gallium nitride based power conversion
Merits of gallium nitride based power conversion
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Merits of gallium nitride based power conversion

Scott, Mark J ; Fu, Lixing ; Zhang, Xuan ; Li, Jinzhu ; Yao, Chengcheng ; Sievers, Markus ; Wang, Jin

Semiconductor science and technology, 2013-07, Vol.28 (7), p.74013 [Periódico revisado por pares]

IOP Publishing

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9
Current status and scope of gallium nitride-based vertical transistors for high-power electronics application
Current status and scope of gallium nitride-based vertical transistors for high-power electronics application
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Current status and scope of gallium nitride-based vertical transistors for high-power electronics application

Chowdhury, Srabanti ; Swenson, Brian L ; Wong, Man Hoi ; Mishra, Umesh K

Semiconductor science and technology, 2013-07, Vol.28 (7), p.74014 [Periódico revisado por pares]

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10
Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN
Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN
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Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN

Pasayat, Shubhra S ; Gupta, Chirag ; Acker-James, Dillon ; Cohen, Daniel A ; DenBaars, Steven P ; Nakamura, Shuji ; Keller, Stacia ; Mishra, Umesh K

Semiconductor science and technology, 2019-11, Vol.34 (11), p.115020 [Periódico revisado por pares]

IOP Publishing

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